Self-Heating Suppressed Structure of a-IGZO Thin-Film Transistor

Kise, Kahori; Fujii, Mami N.; Bermundo, Juan Paolo; Ishikawa, Yasuaki; Uraoka, Yukiharu

doi:10.1109/led.2018.2855152

Cited by 12 publications

(6 citation statements)

References 25 publications

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“…61) device simulation. 63) The calculation results indicates that the outer drain structure has lower electric field and Joule heating near the drain than those of the inner drain structure and the temperature rise of the outer drain structure is suppressed by the decreasing them. This suggests that the outer drain structure is a high reliable TFT structure.…”

Section: Dos Modelmentioning

confidence: 93%

Device modeling of amorphous oxide semiconductor TFTs

Abe¹,

Ota²,

Kuwagaki³

2019

Jpn. J. Appl. Phys.

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Device models of amorphous oxide semiconductor thin-film transistors (AOS TFTs) associate AOS carrier transport and electronic states with AOS TFT electrical characteristics. Thus, such models are very useful for estimation and analysis on operations and reliability of AOS TFTs and developments of electronic devices with AOS TFTs. We discuss the models including mobility models and density of subgap state (DOS) models, which reflect the carrier-electron transport and the electronic states of AOSs. A device simulator employing a carrier-electron density dependent mobility model and an appropriate DOS model can reproduce temperature and electrical characteristics of AOS TFTs.

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Section: Dos Modelmentioning

confidence: 93%

Device modeling of amorphous oxide semiconductor TFTs

Abe¹,

Ota²,

Kuwagaki³

2019

Jpn. J. Appl. Phys.

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“…Heat generation phenomena have been proposed as a cause of TFT deterioration. [91][92][93][94][95] Reference 91 observed the heat generation phenomena using amorphous InSnZnO (a-ITZO). For thermal analysis, an IR microscope (Infra Scope) using InSb as a detector was used.…”

Section: Thermal Degradation and Its Analysis Using An Ir Microscopementioning

confidence: 99%

Degradation phenomenon in metal-oxide-semiconductor thin-film transistors and techniques for its reliability evaluation and suppression

Uraoka

Bermundo

Fujii

et al. 2019

Jpn. J. Appl. Phys.

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Thin-film transistors (TFTs) using metal oxide semiconductors are very promising as driving elements of next-generation displays, and their development is rapidly progressing. However, compared to conventional Si TFTs, they exhibit numerous problems with reliability. In this paper, we outline the observations of various degradation phenomena against electrical bias stress under DC and AC voltage, discuss the degradation mechanism, introduce gate insulation film and protective film which contribute to the improvement of reliability, and propose a reliability evaluation technique using an IR microscope.

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“…Oxide semiconductor platforms including a -IGZOs have several merits, including high μ FE , uniformity, bias-stress reliability, and an extremely low I OFF of 10 –20 A. − Oxide semiconductor TFTs are used as standard switching devices in backplane electronics for large OLED televisions and are expected to be used in high-end, small- and medium-sized OLED displays. Most oxide semiconductor substances have n-type characteristics and a unique electron-conduction mechanism [so-called percolation conduction], in which electron mobility increases with electron concentration and temperature. − The local temperature in an oxide semiconductor channel region is determined by a self-heating phenomenon based on the Joule effect, which can cause an increase in I ON and a negative shift in V TH . − An unintentional increase in the I ON of the pixel driver will adversely affect the brightness of an OLED pixel. Grayscales in a self-emitting OLED pixel vary from <1 nA (black) to >1 μA (full white).…”

Section: Introductionmentioning

confidence: 99%

Theoretical Modeling of a Temperature-Dependent Threshold-Voltage Shift in Self-Aligned Coplanar IZTO Thin-Film Transistors

Kim

Lee

Kim

et al. 2023

ACS Appl. Electron. Mater.

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Here, we investigate the effect of increasing temperature on threshold voltage (V TH ) stability in self-aligned coplanar amorphous indium-zinc-tin oxide (a-IZTO) thin-film transistors (TFTs). An analytical model of the temperature dependency of V TH stability reveals the importance of device geometry and subgap density-of-state (DOS) reductions in highly stable a-IZTO TFTs. The validity of the analytical model is confirmed using experiments and technology computer-aided design simulations to predict quantitative relationships under various shifts in temperatures, subgap DOS, and V TH . The role of hydrogen impurity in performance and V TH stability is also examined. The incorporation of hydrogen in a-IZTO channels improves TFT performance and thermal stability (ΔV TH /ΔT = 3.18 mV/K) due to hydrogen's role as a passivation center. However, excessive incorporation of hydrogen increases subgap DOS distribution, causing a slight deterioration in thermal stability (ΔV TH /ΔT = 3.31 mV/K). This suggests that hydrogen can be converted from a shallow donor to an acceptor-like deep trap state. Our findings inform future designs of stable oxide semiconductor TFTs in terms of thermal stability in emerging organic light-emitting diode, augmented and virtual reality, memory, logic, and monolithic three-dimensional applications.

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Self-Heating Suppressed Structure of a-IGZO Thin-Film Transistor

Cited by 12 publications

References 25 publications

Device modeling of amorphous oxide semiconductor TFTs

Device modeling of amorphous oxide semiconductor TFTs

Degradation phenomenon in metal-oxide-semiconductor thin-film transistors and techniques for its reliability evaluation and suppression

Theoretical Modeling of a Temperature-Dependent Threshold-Voltage Shift in Self-Aligned Coplanar IZTO Thin-Film Transistors

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