Self Heating in InP DHBT Technology for 40 Gb/s ICs

Abstract

Self heating is investigated in InP/InGaAs DHBT's, a transistor technology well suited for 40 Gb/s IC's. An original approach associates experiments and simulations. InP DHBT's are shown to heat up even if their I-V characteristics do not present a negative differential output conductance as GaAs HBT's do. Their thermal resistance was found in the same range of values both using physical modeling and pulsed measurements coupled with electrical modeling.