2022
DOI: 10.1038/s41467-022-32719-w
|View full text |Cite
|
Sign up to set email alerts
|

Self-heating hotspots in superconducting nanowires cooled by phonon black-body radiation

Abstract: Controlling thermal transport is important for a range of devices and technologies, from phase change memories to next-generation electronics. This is especially true in nano-scale devices where thermal transport is altered by the influence of surfaces and changes in dimensionality. In superconducting nanowire single-photon detectors, the thermal boundary conductance between the nanowire and the substrate it is fabricated on influences all of the performance metrics that make these detectors attractive for app… Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

2
1
0

Year Published

2022
2022
2024
2024

Publication Types

Select...
8

Relationship

1
7

Authors

Journals

citations
Cited by 17 publications
(7 citation statements)
references
References 55 publications
2
1
0
Order By: Relevance
“…When the temperature is gradually increased toward T c , the Joule heat required to maintain the microstrip in a self-heating equilibrium state decrease, resulting in a decrease in I r . The relationship between I r and T is given by: where α is the thermal conductivity of the interface between the microstrip and substrate, d is the thickness of the conducting layer of the LAO/KTO interface, and ρ 0 is the resistivity of the sample [32][33][34]. The fitting result shows that T c of the sample is approximately 0.7 K, which is consistent with the experimental results.…”
Section: Resultssupporting
confidence: 80%
“…When the temperature is gradually increased toward T c , the Joule heat required to maintain the microstrip in a self-heating equilibrium state decrease, resulting in a decrease in I r . The relationship between I r and T is given by: where α is the thermal conductivity of the interface between the microstrip and substrate, d is the thickness of the conducting layer of the LAO/KTO interface, and ρ 0 is the resistivity of the sample [32][33][34]. The fitting result shows that T c of the sample is approximately 0.7 K, which is consistent with the experimental results.…”
Section: Resultssupporting
confidence: 80%
“…We have plotted T 4 e − T 4 as a function of P G in the modified figure 4(b) and have observed a linear dependence for various bath temperatures. The linear approximation exhibits good agreement with the experimental data when using a k value of 66.5 Wm −2 K −4 , which is of the same order as in previous studies in Cu, graphene and NbN films [51][52][53]. Hence, we propose that the origin of the observed critical current suppression could presumably be attributed to the leakage current-induced gate power (P G ) relaxation in the bottom Nb microbridges by the electronphonon interaction [50,51], as depicted in supplementary materials figure S4.…”
Section: Sample Fabrication and Measurement Techniquessupporting
confidence: 85%
“…2 of the Supplementary Material, more accurate results are obtained through a finite-element simulation of the electrothermal process 55 57 …”
Section: Appendix: Materials and Methodsmentioning
confidence: 99%