Self-Heating Analysis of 1570 nm InGaAsP Buried Tunnel Junction Photonic Crystal VCSEL

Abstract

In this paper, the lattice temperature in an InP-based 1570 nm InGaAsP buried tunnel junction photonic crystal vertical-cavity surface-emitting laser (BTJ-PhC VCSEL) was varied between 280 K until 370 K and its effects on the characteristics of the device was investigated. The temperature profiles of the BTJ-PhC VCSEL are obtained iteratively by considering their temperature-dependent material properties and the spatial distribution of all the significant heat sources. The thermal resistance used to model the electrical contacts causes about 8 K temperature increment above the ambient temperature (300 k) at a bias of 3 V and a