Self-formation of GaN hollow nanocolumns by inductively coupled plasma etching

Hung, Shang-Chao; Su, Yan–Kuin; Chang, Shoou‐Jinn; Chen, S. C.; Ji, Liang‐Wen; Fang, Te-Hua; Tu, Li‐Wei; Chen, M.

doi:10.1007/s00339-005-3219-z

Cited by 27 publications

(10 citation statements)

References 37 publications

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“…With recent advances in crystal growth technology, GaN nanostructures have been synthesized through different methods. [18][19][20][21][22] Although most GaN nanowires crystallize in the stable WZ structures, an embedded ZB phase in the WZ nanowires have been observed. [23][24][25] Recently, the WZ/ZB heterojunctions have been synthesized.…”

Section: Introductionmentioning

confidence: 98%

Charge Separation in Wurtzite/Zinc‐Blende Heterojunction GaN Nanowires

Wang

Gao

et al. 2010

ChemPhysChem

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The electronic properties of wurtzite/zinc-blende (WZ/ZB) heterojunction GaN are investigated using first-principles methods. A small component of ZB stacking formed along the growth direction in the WZ GaN nanowires does not show a significant effect on the electronic property, whereas a charge separation of electrons and holes occurs along the directions perpendicular to the growth direction in the ZB stacking. The later case provides an efficient way to separate the charge through controlling crystal structure. These results have significant implications for most state of the art excitonic solar cells and the tuning region in tunable laser diodes.

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Section: Introductionmentioning

confidence: 98%

Charge Separation in Wurtzite/Zinc‐Blende Heterojunction GaN Nanowires

Wang

Gao

et al. 2010

ChemPhysChem

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“…The detailed observation of atomic configuration shows that new bond is formed between the individual nanotubes in the bundles due to the The interaction of individual nanotube in the bundles are also responsible for the brittle properties of bundle that consisted of seven individual nanotube at 1500 K. The study of the individual nanotube demonstrates that the BDT increase when the wall thickness of nanotube is increased, which can be attributed to the large surface to volume ratio of the nanotube. 7 As the bonding of surface atoms is weaker than that of core atoms, it will be much easier for surface atoms to leave its crystal lattice position. And plastic deformation occurs much easier in nanotubes with thin wall thickness at lower temperatures.…”

Section: Resultsmentioning

confidence: 99%

“…According to the literature reporting, wurtzite GaN nanotubes with hexagonal cross-section and growing along the [001] crystalline direction can be synthesized though several synthesis methods, such as chemical thermal evaporation process, 4 conversion of amorphous gallium oxide nanotubes, 5 an "epitaxial casting" approach, 6 and inductively coupled plasma etching method. 7 The side surface GaN nanotubes can be with atomic arrangement along (100) or (110) crystal planes; however, as the surface energy of (100) planes is lower than that of (110) planes, so the GaN nanotubes with side surfaces of (100) planes are easily synthesized than the one with (110) planes. 4 Our previous simulation results show that the tensile behavior of individual GaN nanotubes depends on the temperatures, i.e., GaN nanotubes fracture with ductility and brittleness manner at higher temperatures and lower temperatures, respectively, which leads to a brittle to ductile transition (BDT).…”

Section: Introductionmentioning

confidence: 99%

“…8 In fact, the GaN nanotubes are often synthesized in an array that is composed of vertically aligned individual GaN nanotubes. [5][6][7] Such GaN nanotube arrays (or bundles) may also find its applications in future devices, so it is necessary to understand the nano-mechanical behavior of GaN nanotube bundles under external loading force. In the present work, we used classical molecular dynamics to investigate the tensile behavior of GaN nanotube bundles under tensile strain.…”

Section: Introductionmentioning

confidence: 99%

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Tensile behavior of single crystalline GaN nanotube bundles: An atomistic-level study

Wang

Yin

Jing

et al. 2014

Int. J. Mod. Phys. B

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The tensile behavior of single crystalline GaN nanotube bundles was studied using classical molecular dynamics. Stillinger-Weber potential was used to describe the atom-atom interactions. The GaN bundles consisted of several individual GaN nanotubes with {100} side planes. The simulation results show that the nanotube bundles show a brittle to ductile transition (BDT) by changing the temperatures. The fracture of GaN nanotube bundles is ruled by a thermal activated process, higher temperature will lead to the decrease of the critical stress. At high temperatures the individual nanotube in the bundles interact with each other, which induces the increase of the critical stress of bundles.

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“…During etching, we kept the ICP power, bias power, chamber pressure and BCl 3 flow rate at 200 W, 200 W, 20 mTorr and 5 sccm, respectively. Details of the growth can be found elsewhere [23]. Note that all the specimens were etched with the same time period.…”

Section: Methodsmentioning

confidence: 99%

Structure-related optical behavior of nanoscale GaN island, tip, tube and cone arrays formed by inductively coupled plasmas etching

et al. 2016

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We introduce a one-step self-assembled technique to form various nanostructures on N-type GaN film and then present an optical characterization of a series of low-dimensional GaN nanostructures by using low-temperature photoluminescence (LTPL) spectroscopy. Nanoscale GaN island, tip, tube and cone-like structures of diameters ranging from 50 to 190 nm were self-assembled on a c-axis perpendicular to substrate surface with uniform diameter and uniform length by inductively coupled plasmas etching process without lithography. Optical LTPL measurements on nanostructures show consistent variations in the properties of the fabricated GaN structures as a function of surface area of GaN nanostructures. LTPL mapping gives an evidence for defect-induced donors and/ or acceptors near the facets of the ICP-etched nanostructure. Our results indicate that a higher concentration of donor-related defects is introduced on the surface of GaN nanotubes. In particular, the nanotubes sample exhibits a conspicuous increased in yellow luminescence intensity compared to the other nanostructure samples. This result may support more information for the application of nanotubes on nanogenerators.

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Self-formation of GaN hollow nanocolumns by inductively coupled plasma etching

Cited by 27 publications

References 37 publications

Charge Separation in Wurtzite/Zinc‐Blende Heterojunction GaN Nanowires

Charge Separation in Wurtzite/Zinc‐Blende Heterojunction GaN Nanowires

Tensile behavior of single crystalline GaN nanotube bundles: An atomistic-level study

Structure-related optical behavior of nanoscale GaN island, tip, tube and cone arrays formed by inductively coupled plasmas etching

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