Self‐Formation of a Ru/ZnO Multifunctional Bilayer for the Next‐Generation Interconnect Technology via Area‐Selective Atomic Layer Deposition

Mori, Yuichi; Cheon, Taehoon; Kotsugi, Yohei; Kim, Youn‐Hye; Park, Yejin; Ansari, Mohd Zahid; Mohapatra, Debananda; Jang, Yujin; Bae, Jong‐Sup; Kwon, Woobin; Kim, Gahui; Park, Young‐Bae; Lee, Han‐Bo‐Ram; Song, Wooseok; Kim, Soo‐Hyun

doi:10.1002/smll.202300290

Cited by 4 publications

(1 citation statement)

References 79 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…SMIs often take advantage of the formation of covalent bonds with a substrate to generate a stable monolayer. For instance, Al–OH/acetylacetone (Hacac) and Si–OH/dimethylamino-trimethylsilane (DTA-TMS) − generate a small molecule that entropically drives the reaction between the SMI and a surface (Figure a) . In these systems, the formation of a covalent bond stabilizes the inhibiting surface but has a steep energy requirement, where their deposition (and bond formation) requires higher temperatures of −150 °C for Al–OH/Hacac and 250 °C for Si–OH/DTA-TMS.…”

Section: Introductionmentioning

confidence: 99%

Reactive Vapor-Phase Inhibitors for Area-Selective Depositions at Tunable Critical Dimensions

Ogunfowora,

Singh,

Arellano

et al. 2024

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Area-selective depositions (ASD) take advantage of the chemical contrast between material surfaces in device fabrication, where a film can be selectively grown by chemical vapor deposition on metal versus a dielectric, for instance, and can provide a path to nontraditional device architectures as well as the potential to improve existing device fabrication schemes. While ASD can be accessed through a variety of methods, the incorporation of reactive moieties in inhibitors presents several advantages, such as increasing thermal stability and limiting precursor diffusion into the blocking layer. Alkyne-terminated small molecule inhibitors (SMIs)�propargyl, dipropargyl, and tripropargylamine�were evaluated as metal-selective inhibitors. Modeling these SMIs provided insight into the binding mechanism, influence of sterics, and complex polymer network formed from the reaction between inhibitors consisting of alkene, aromatic, and network branchpoints. While a significant contrast in the binding of the SMIs on copper versus a dielectric was observed, residual amounts were detected on the dielectric surfaces, leading to variable ALD growth rates dependent on pattern-critical dimensions. This behavior can be controlled and utilized to direct film growth on patterns only above a critical threshold dimension; below this threshold, both the dielectric and metal features are protected. This method provides another design parameter for ASD processes and may extend its application to broader-ranging device fabrication schemes.

show abstract

Section: Introductionmentioning

confidence: 99%

Reactive Vapor-Phase Inhibitors for Area-Selective Depositions at Tunable Critical Dimensions

Ogunfowora,

Singh,

Arellano

et al. 2024

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

Atomic Layer Deposition—A Versatile Toolbox for Designing/Engineering Electrodes for Advanced Supercapacitors

Ansari,

Hussain,

Mohapatra

et al. 2023

Advanced Science

Self Cite

View full text Add to dashboard Cite

Atomic layer deposition (ALD) has become the most widely used thin‐film deposition technique in various fields due to its unique advantages, such as self‐terminating growth, precise thickness control, and excellent deposition quality. In the energy storage domain, ALD has shown great potential for supercapacitors (SCs) by enabling the construction and surface engineering of novel electrode materials. This review aims to present a comprehensive outlook on the development, achievements, and design of advanced electrodes involving the application of ALD for realizing high‐performance SCs to date, as organized in several sections of this paper. Specifically, this review focuses on understanding the influence of ALD parameters on the electrochemical performance and discusses the ALD of nanostructured electrochemically active electrode materials on various templates for SCs.It examines the influence of ALD parameters on electrochemical performance and highlights ALD's role in passivating electrodes and creating 3D nanoarchitectures. The relationship between synthesis procedures and SC properties is analyzed to guide future research in preparing materials for various applications. Finally, it is concluded by suggesting the directions and scope of future research and development to further leverage the unique advantages of ALD for fabricating new materials and harness the unexplored opportunities in the fabrication of advanced‐generation SCs.

show abstract

Sustained Area‐Selectivity in Atomic Layer Deposition of Ir Films: Utilization of Dual Effects of O₃ in Deposition and Etching

Kim,

Chung

et al. 2024

Small

View full text Add to dashboard Cite

Area‐selective deposition (ASD) based on self‐aligned technology has emerged as a promising solution for resolving misalignment issues during ultrafine patterning processes. Despite its potential, the problems of area‐selectivity losing beyond a certain thickness remain critical in ASD applications. This study reports a novel approach to sustain the area‐selectivity of Ir films as the thickness increases. Ir films are deposited on Al2O3 as the growth area and SiO2 as the non‐growth area using atomic‐layer‐deposition with tricarbonyl‐(1,2,3‐η)‐1,2,3‐tri(tert‐butyl)‐cyclopropenyl‐iridium and O3. O3 exhibits a dual effect, facilitating both deposition and etching. In the steady‐state growth regime, O3 solely contributes to deposition, whereas in the initial growth stages, longer exposure to O3 etches the initially formed isolated Ir nuclei through the formation of volatile IrO3. Importantly, longer O3 exposure is required for the initial etching on the growth area(Al2O3) compared to the non‐growth area(SiO2). By controlling the O3 injection time, the area selectivity is sustained even above a thickness of 25 nm by suppressing nucleation on the non‐growth area. These findings shed light on the fundamental mechanisms of ASD using O3 and offer a promising avenue for advancing thin‐film technologies. Furthermore, this approach holds promise for extending ASD to other metals susceptible to forming volatile species.

show abstract

Self‐Formation of a Ru/ZnO Multifunctional Bilayer for the Next‐Generation Interconnect Technology via Area‐Selective Atomic Layer Deposition

Cited by 4 publications

References 79 publications

Reactive Vapor-Phase Inhibitors for Area-Selective Depositions at Tunable Critical Dimensions

Reactive Vapor-Phase Inhibitors for Area-Selective Depositions at Tunable Critical Dimensions

Atomic Layer Deposition—A Versatile Toolbox for Designing/Engineering Electrodes for Advanced Supercapacitors

Sustained Area‐Selectivity in Atomic Layer Deposition of Ir Films: Utilization of Dual Effects of O₃ in Deposition and Etching

Contact Info

Product

Resources

About

Self‐Formation of a Ru/ZnO Multifunctional Bilayer for the Next‐Generation Interconnect Technology via Area‐Selective Atomic Layer Deposition

Cited by 4 publications

References 79 publications

Reactive Vapor-Phase Inhibitors for Area-Selective Depositions at Tunable Critical Dimensions

Reactive Vapor-Phase Inhibitors for Area-Selective Depositions at Tunable Critical Dimensions

Atomic Layer Deposition—A Versatile Toolbox for Designing/Engineering Electrodes for Advanced Supercapacitors

Sustained Area‐Selectivity in Atomic Layer Deposition of Ir Films: Utilization of Dual Effects of O3 in Deposition and Etching

Contact Info

Product

Resources

About

Sustained Area‐Selectivity in Atomic Layer Deposition of Ir Films: Utilization of Dual Effects of O₃ in Deposition and Etching