Self-driven Vis-NIR broadband photodetector based on nano-hedge-like MoS2/WSe2 heterostructure

A nanoflower-like GaSe/β-Ga2O3 based heterostructure for highly efficient self-powered broadband photodetectors

“…4(c) shows the key figures of merit for device performance, such as detectivity (D), responsivity (R), noise equivalent power (NEP), and external quantum efficiency (EQE), and the related eqn (S3)-(S6) are given in the ESI. † 1,52 The curves for R, D, NEP, and EQE of the fabricated device under varied wavelengths as a function of applied bias at 0 V are shown in Fig. 4(c).…”

Strong Covalent Coupling in Vertically Layered SnSe2/PTAA Heterojunctions Enabled High Performance Inorganic–Organic Hybrid Photodetectors

“…The performances of the recently reported heterostructure based-PDs are summarized in Table . The key performance parameters of our SnSe 2 /PTAA hybrid PDs are comparable or superior to other heterostructured PDs. ,− Furthermore, we also fabricated SnSe 2 PDs without the annealing (H 2 Se atmosphere) process for comparison (Figure e). The photoresponse is shown in Figure f–h.…”

Recent developments in the state-of-the-art optoelectronic synaptic devices based on 2D materials: a review

“…Instead, TMDCs display strong light–matter interactions and are well known for their layer-dependent tunable bandgaps, which are suitable for synaptic applications in specific wavelength ranges. 53,254–256 Defects in TMDCs are a major concern and stem from different origins like vacancies, interstitial impurities, and grain boundaries. The interface between two types of materials (semiconductor–insulator interface) can develop a trap state, leading to longer memory for the artificial synapse.…”