Self-driven ultraviolet photodetectors based on ferroelectric depolarization field and interfacial potential

Photodetector without Electron Transport Layer Based on Hexane-1,6-Diammonium Pentaiodobismuth (HDA-BiI5) Molecular Semiconductor

“…This suggests that photoionization will be further enhanced with one carrier being trapped and another carrier flowing in a circular fashion, which reduces the large recombination of electron-hole pairs, enhancing photodetector performance [25]. The performance of this device is attractive compared to other similar detectors, and a comparison chart of the performance parameters with other similar devices is presented in Table 1 [20,21,[26][27][28][29][30][31][32][33]. According to previous literature reports, the HDA-BiI 5 -based device study did not systematically analyze the relevant parameter performance of the detector [20,21], however, compared with detectors of other materials, although some devices exhibit lower dark currents, our device is still very competitive as a photodetector without electron transport layer structure, considering the overall photoelectronic performance and simple fabrication process.…”

High‐Performance Self‐Powered Ultraviolet Photodetector based on Coupled Ferroelectric Depolarization Field and Heterojunction Built‐In Potential

“…As seen, bandgaps of ZnO and PLZT are estimated to be 3.22 and 3.64 eV, respectively, which are in accordance with the reported values. [8,17,30,31] P-E loop of the PLZT thin film is shown in Figure 1d. A typical P-E loop is seen with a remanent polarization (P r ) of 34.83 µC cm −2 , demonstrating excellent ferroelectricity of the PLZT film.…”

“…By coupling the E dp in the PLZT and E ZnO/PLZT at the ZnO/PLZT heterojunction interface, much enhanced photodetector performances (i.e., responsivity, detectivity, and response speed) were achieved for the ZnO/PLZT heterojunction-based device (denoted as Au/ZnO/PLZT/FTO device) as compared with our previously reported Au/PLZT/ FTO device. [8] Moreover, the performing parameters (i.e., responsivity and detectivity) of the Au/ZnO/PLZT/FTO device are superior to those of most published ferroelectric-based devices. The current work provides an effective and extendable method for the fabrication of self-powered UV detectors with high performance.…”

“…[1][2][3] However, there have been no breakthroughs in the Pb 0.95 La 0.05 Zr 0.54 Ti 0.46 O 3 (PLZT) having a wide bandgap (≈3.7 eV) and high ferroelectricity is a promising ferroelectric material for UV detector application. [8,29] Among semiconductors, ZnO is one of the most promising candidates for UV photodetectors because of its wide bandgap (3.37 eV) and easy fabrication. [30,31] Moreover, due to a favorable II-type band alignment between ZnO and PLZT films, where both conduction band minimum (CBM) and valence band maximum (VBM) of one film are located at higher energy levels with respect to the other, which resembles the band alignment at a p-n junction.…”

“…[5][6][7] The characteristics of wide bandgap and tunable PV effect in ferroelectric materials allow them to be suitably applicable in the field of self-powered ultraviolet (UV) photodetectors. [8,9] So far, self-powered photodetectors based on ferroelectric materials such as Pb(Zr,Ti)O 3 , [8,10] BaTiO 3 (BTO), [9] BiFeO 3 (BFO), [11,12] and 0.5Ba(Zr 0.2 Ti 0.8 )O 3 -0.5(Ba 0.7 Ca 0.3 )TiO 3 (BZT-BCT) [13] have been reported, which open prospects for applying ferroelectric materials in fields such as environmental monitoring, biomedicine, and missile tracking. [14][15][16] For ferroelectric-based self-powered UV photodetectors, the ferroelectric depolarization electric field (E dp ) and the built-in electric field at the ferroelectric/electrode interface are the main driven force of photogenerated carriers.…”