Self‐Driven Metal–Semiconductor–Metal WSe<sub>2</sub> Photodetector with Asymmetric Contact Geometries

Zhou, Changjian; Raju, Salahuddin; Li, Bin; Chan, Mansun; Chai, Yang; Yang, Cary Y.

doi:10.1002/adfm.201802954

Cited by 142 publications

(153 citation statements)

References 47 publications

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“…Figure 5c exhibits the current–voltage ( I – V ) curves of 3L BiOBr‐based photodetector irradiated by various light with wavelengths from 245 to 450 nm and in the dark. The asymmetric I – V curve between positive and negative bias region can be ascribed to the different contact area and breadth between 2D material and positive/negative electrodes with Schottky contact 35,36. As can be seen, the device exhibits enhanced photoresponse for broad UV range from UVA to UVC.…”

Section: Figurementioning

confidence: 91%

Large‐Scale Ultrathin 2D Wide‐Bandgap BiOBr Nanoflakes for Gate‐Controlled Deep‐Ultraviolet Phototransistors

et al. 2020

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Ternary two‐dimensional (2D) semiconductors with controllable wide bandgap, high ultraviolet (UV) absorption coefficient, and critical tuning freedom degree of stoichiometry variation have a great application prospect for UV detection. However, as‐reported ternary 2D semiconductors often possess a bandgap below 3.0 eV, which must be further enlarged to achieve comprehensively improved UV, especially deep‐UV (DUV), detection capacity. Herein, sub‐one‐unit‐cell 2D monolayer BiOBr nanoflakes (≈0.57 nm) with a large size of 70 µm are synthesized for high‐performance DUV detection due to the large bandgap of 3.69 eV. Phototransistors based on the 2D ultrathin BiOBr nanoflakes deliver remarkable DUV detection performance including ultrahigh photoresponsivity (Rλ, 12739.13 A W−1), ultrahigh external quantum efficiency (EQE, 6.46 × 106%), and excellent detectivity (D*, 8.37 × 1012 Jones) at 245 nm with a gate voltage (Vg) of 35 V attributed to the photogating effects. The ultrafast response (τrise = 102 µs) can be achieved by utilizing photoconduction effects at Vg of −40 V. The combination of photocurrent generation mechanisms for BiOBr‐based phototransistors controlled by Vg can pave a way for designing novel 2D optoelectronic materials to achieve optimal device performance.

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Section: Figurementioning

confidence: 91%

Large‐Scale Ultrathin 2D Wide‐Bandgap BiOBr Nanoflakes for Gate‐Controlled Deep‐Ultraviolet Phototransistors

et al. 2020

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“…Schematic diagram of the metal–WSe 2 –metal (MSM) photodetector device structure with e) asymmetric contact geometry and f) symmetric contact geometry. Reproduced with permission . Copyright 2018, Wiley‐VCH.…”

Section: D Material‐based Schottky Junction Photodetectorsmentioning

confidence: 99%

Section: Graphene-based Schottky Junctionmentioning

confidence: 99%

Self‐Powered Photodetectors Based on 2D Materials

Qiao

Huang

Ren

et al. 2019

Advanced Optical Materials

268

225

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Self‐powered photodetectors are considered as a new type of photodetectors enabling self‐powered photodetection without external power. The excellent photoresponsivity, fast photoresponse rate, low dark current, and large light on/off ratio of these photodetectors have attracted wide interest among scholars. 2D materials are widely used in self‐powered photodetectors due to their excellent optical and electrical properties, unique 2D structures, and their capabilities to exhibit excellent photodetection performance. According to the self‐driving mechanism of 2D material‐based self‐powered photodetectors, they are divided into three categories: p–n junction photodetectors, Schottky junction photodetectors, and photoelectrochemical photodetectors. From these three perspectives, the research progress of 2D material‐based self‐powered photodetectors is summarized in detail here. Research reports indicate that 2D material‐based self‐powered photodetectors have excellent self‐powered photoresponse behavior, good light on/off characteristics, and wideband spectral response ranges. The excellent photoresponse performance of 2D material‐based self‐powered photodetectors facilitates their potential applications in the field of optoelectronic devices. In particular, self‐powered photodetectors have great potential as novel emerging self‐driven optoelectronic devices. Finally, directions for the further development of 2D material‐based self‐powered photodetectors are anticipated.

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“…Recently, 2D transition metal dichalcogenides (2D‐TMDCs) have attracted much research interest because of their unique and beneficial electrical, optical, and mechanical properties, which enable the realization of large‐area flexible and wearable electronic devices . In particular, 2D‐TMDC‐based transistors have emerged as the most important fundamental building blocks in the development and maintenance of basic microelectronic circuit components such as programmable logic circuits, oscillators, and memory units.…”

Section: Introductionmentioning

confidence: 99%

Controllable P‐ and N‐Type Conversion of MoTe₂ via Oxide Interfacial Layer for Logic Circuits

Park

Katiyar

Hoang

et al. 2019

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To realize basic electronic units such as complementary metal‐oxide‐semiconductor (CMOS) inverters and other logic circuits, the selective and controllable fabrication of p‐ and n‐type transistors with a low Schottky barrier height is highly desirable. Herein, an efficient and nondestructive technique of electron‐charge transfer doping by depositing a thin Al2O3 layer on chemical vapor deposition (CVD)‐grown 2H‐MoTe2 is utilized to tune the doping from p‐ to n‐type. Moreover, a type‐controllable MoTe2 transistor with a low Schottky barrier height is prepared. The selectively converted n‐type MoTe2 transistor from the p‐channel exhibits a maximum on‐state current of 10 µA, with a higher electron mobility of 8.9 cm2 V−1 s−1 at a drain voltage (Vds) of 1 V with a low Schottky barrier height of 28.4 meV. To validate the aforementioned approach, a prototype homogeneous CMOS inverter is fabricated on a CVD‐grown 2H‐MoTe2 single crystal. The proposed inverter exhibits a high DC voltage gain of 9.2 with good dynamic behavior up to a modulation frequency of 1 kHz. The proposed approach may have potential for realizing future 2D transition metal dichalcogenide‐based efficient and ultrafast electronic units with high‐density circuit components under a low‐dimensional regime.

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Self‐Driven Metal–Semiconductor–Metal WSe₂ Photodetector with Asymmetric Contact Geometries

Cited by 142 publications

References 47 publications

Large‐Scale Ultrathin 2D Wide‐Bandgap BiOBr Nanoflakes for Gate‐Controlled Deep‐Ultraviolet Phototransistors

Large‐Scale Ultrathin 2D Wide‐Bandgap BiOBr Nanoflakes for Gate‐Controlled Deep‐Ultraviolet Phototransistors

Self‐Powered Photodetectors Based on 2D Materials

Controllable P‐ and N‐Type Conversion of MoTe₂ via Oxide Interfacial Layer for Logic Circuits

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Self‐Driven Metal–Semiconductor–Metal WSe2 Photodetector with Asymmetric Contact Geometries

Cited by 142 publications

References 47 publications

Large‐Scale Ultrathin 2D Wide‐Bandgap BiOBr Nanoflakes for Gate‐Controlled Deep‐Ultraviolet Phototransistors

Large‐Scale Ultrathin 2D Wide‐Bandgap BiOBr Nanoflakes for Gate‐Controlled Deep‐Ultraviolet Phototransistors

Self‐Powered Photodetectors Based on 2D Materials

Controllable P‐ and N‐Type Conversion of MoTe2 via Oxide Interfacial Layer for Logic Circuits

Contact Info

Product

Resources

About

Self‐Driven Metal–Semiconductor–Metal WSe₂ Photodetector with Asymmetric Contact Geometries

Controllable P‐ and N‐Type Conversion of MoTe₂ via Oxide Interfacial Layer for Logic Circuits