Self-Driven Gr/WSe₂/Gr Photodetector with High Performance Based on Asymmetric Schottky van der Waals Contacts

Ultralow Dark Current and High On/Off Ratio Photodetector Based on a Two-Dimensional GeSe/VP Heterostructure

“…Figure a shows the gate-tunable I–V characteristic curves of GeSe/VP heterostructure, and the inset shows the corresponding semilog plot. Compared with a single thin sheet without rectifying behavior (Figure S2), the GeSe/VP heterostructure shows visible current rectifying behavior which is attributed to the barrier from the interface of the heterostructure. , Meanwhile, the current-rectifying characteristics show a significant dependence on gate voltage. The rectification ratio increased with positive gate voltage and exhibited a tendency to saturate (Figure S3).…”