Self-driven, broadband and ultrafast photovoltaic detectors based on topological crystalline insulator SnTe/Si heterostructures

Abstract

Topological crystalline insulator SnTe film/Si heterostructure were fabricated, which can function as self-driven, ultrafast and broadband photovoltaic detectors.

Graphene actively Q-switched lasers

“…(b) Photoresponsivity comparison of this work and typical previous results (i.e. WSe2/BP/MoS2 [210], Bi2Te3, [207] WS2/Bi2Te3, [209] Graphene, [208] BP, [212,213,232,235] SnTe/Si, [211] MoTe2/MoS2, [198] BP/WSe2, [236] Graphene/Bi2Te3, [237] MoS2/PbS, [238] MoS2/BP, [239] and MoS2/Graphene/WSe2 [86]) at = 1550 nm. Publication I.…”

“…The comparisons of the photoresponsivity at 532 nm, 980 nm and 1550 nm with the same bias conditions are depicted in Figure 5.6(a). Graphene, [208] WS2/Bi2Te3, [209] WSe2/BP/MoS2, [210] SnTe/Si, [211] MoTe2/MoS2, [198] and BP [212,213]) at the wavelength of 1550 nm. Publication II.…”

A MoSe2/WSe2 Heterojunction‐Based Photodetector at Telecommunication Wavelengths

“…a) Summary of responsivity dependence of laser power at the wavelengths of 532, 980, and 1550 nm. b) Responsivity comparison of this work and typical published results (i.e., Bi 2 Te 3 , Graphene, WS 2 /Bi 2 Te 3 , WSe 2 /BP/MoS 2 , SnTe/Si, MoTe 2 /MoS 2 , and BP) at the wavelength of 1550 nm.…”

Production Methods of Van der Waals Heterostructures Based on Transition Metal Dichalcogenides

“…A heterostructure from a 1D-Bi 2 S 3 nanowire and a 2D-MoS 2 monolayer was achieved by the one-step CVD growth, in which a mixture of Bi 2 O 3 and MoO 3 nanopowder was chosen to be the precursor [88]. Besides, Gu et al demonstrated, for the first time, the construction of high-quality TCI SnTe-Si heterostructures with excellent diode characteristics by a simple CVD process [89]. The fabrication was achieved by depositing polycrystalline SnTe films onto Si windows on pre-patterned SiO 2 /Si substrates.…”