Self‐doped N‐propansulfonic acid polyaniline‐polyethylene terephthalate film used as active sensor element for humidity or gas detection

Abstract

In this work, we report the fabrication of sensors’ element for humidity or gases, prepared by in situ polymerization of aniline N‐propansulfonic acid using ammonium persulfate in acidic medium. The polymer is being used in the form of powder or deposited in multiple layers onto the PET film. Various techniques including Fourier Transform infrared (FTIR), ultraviolet‐–visible spectroscopy (UV–vis), X‐ray diffraction (XRD) and scanning electron microscopy (SEM) were employed to characterize the as‐prepared sensing materials. The film has been tested for humidity influence, where the significant variations in electrical characteristics were observed, suggesting its usefulness for humidity sensors. Also, for different organic and inorganic gases, a relatively low operating temperature and important sensitivity were observed that indicate its applicability as an active element for general gases sensors. © 2019 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2019, 136, 47743.

Homologous Series of Polyaniline Derivatives Block Copolymers with Amphiphilic and Semiconducting Properties

“…The PANi synthesized by us had these bands. The characteristic bands of PANs are localized at 1562 cm −1 (C=C stretch of quinoid ring), 1423 cm −1 (benzenoid ring), 1313 cm −1 (C–N stretching in the benzenoid and quinoid imine), 1031 cm −1 , and 1153 cm −1 (asymmetric and symmetric sulfonic groups O=S=O stretching vibrations) [ 14 , 22 ], Figure S2 . A similar behavior is generally observed for all amphiphilic copolymers based on polyanilines.…”

Organic field-effect transistor-based flexible sensors

“…143 A viable solution is the use of conjugated polymers that can be processed at room temperature, thus facilitating the development of nextgeneration smart humidity sensors. 163,164 In the case of polymers, three commonly reported transducing mechanisms are chemiresistive, 165 chemi-capacitive, 166 and OFET 167,168 based concepts. The devices based on the first two concepts are relatively simple to fabricate.…”