Self-diffusivity of liquid silicon measured by pulsed laser melting

Abstract

Articles you may be interested inFabrication and subband gap optical properties of silicon supersaturated with chalcogens by ion implantation and pulsed laser meltingThe silicon liquid self-diffusivity was determined by pulsed laser melting of 30 Si ion implanted silicon-on-insulator thin films. Secondary ion mass spectrometry was employed to measure the 30 Si ϩ concentration-depth profile before and after melting and solidification. Melt depth versus time and total melt duration were monitored by time-resolved lateral electrical conductance and optical reflectance measurements. One-dimensional diffusion simulations were utilized to match the final 30 Si ϩ experimental concentration spatial profile given the initial concentration profile and the temporal melt-depth profile. The silicon liquid self-diffusivity at the melting point is (4.0Ϯ0.5) ϫ10 Ϫ4 cm 2 /s. Calculations of buoyancy and Marangoni convection indicate that convective contamination is unlikely.

Dependence of the structure and dynamics of liquid silicon on the choice of density functional approximation

“…This is in accord with the earlier interpretation 10 that spin-polarization adds additional attractions. We also note that this increases the discrepancy between the single experimental measurement of the diffusion coefficient quoted here 41 and the computed values, furthering the need for additional experimental studies of the dynamics of l-Si.…”

Thermodynamics and Kinetics of Direct Synthesis of Solar Grade Silicon from Metallurgical Silicon Wafer by Liquid Phase Migration in Solid Silicon

“…where D 0 i represents the self-diffusion coef cient of component i, and γ i represents the activity coef cient of i in the binary i-j system. D 0 Si and D 0 Fe were obtained from the literature 67,68) and dlnγ i /dX i at the liquidus composition was calculated from the excess Gibbs energy of the liquid phase 69) . The estimated interdiffusion coef cient at the liquidus composition obtained from eq.…”

Development of an atomic mobility database for liquid phase in multicomponent Al alloys: focusing on binary systems

“…Sanders and Aziz [22] determined the self-diffusivity of liquid Si at 1687 K by pulsed laser melting of 30+ Si ion implanted silicon-on-insulator thinfilms.But their values are muchlarger than the ones obtained by other authors [23 -30] using molecular dynamics simulation method. Recently, Pommrich et al [31] calculated the self-diffusion coefficientsi nl iquid Si from viscosity data of pure liquid Si from 1687 to 1853 K. The calculated data are in accordance with the tracer diffusion of Ni in liquid Si-rich Ni -Sia lloys [31].…”

“…Moreover those calculated data could fit most of the theoretically predicted ones acceptably. Therefore, the calculated self-diffusion data from Pommrich et al [31] are utilized to evaluate the atomic mobility for pure liquid Si, while the data of Sanders and Aziz [22] are not used in the present assessment.…”