Self-diffusion of 71Ge in Si–Ge

Strohm, A.; Voss, T.; Frank, W.; Räisänen, J.; Dietrich, M.

doi:10.1016/s0921-4526(01)00814-6

Cited by 28 publications

(19 citation statements)

References 8 publications

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“…7 As the aggressive scaling of modern devices will soon lead to devices with characteristic dimensions of only a few nanometers, the understanding of atomic diffusion and the stability of related complexes is becoming increasingly important in group IV semiconductors. [8][9][10][11][12] The most fundamental process of matter transport in Si 1−x Ge x is self-diffusion, which has been studied by both experimental [13][14][15][16][17][18][19][20] and theoretical 21,22 methods. Although E centers have been studied extensively in Si ͑Refs.…”

Section: Introductionmentioning

confidence: 99%

Nonlinear stability ofEcenters inSi1−xGex: Electronic structure calculations

et al. 2008

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Electronic structure calculations are used to investigate the binding energies of defect pairs composed of lattice vacancies and phosphorus or arsenic atoms ͑E centers͒ in silicon-germanium alloys. To describe the local environment surrounding the E center we have generated special quasirandom structures that represent random silicon-germanium alloys. It is predicted that the stability of E centers does not vary linearly with the composition of the silicon-germanium alloy. Interestingly, we predict that the nonlinear behavior does not depend on the donor atom of the E center but only on the host lattice. The impact on diffusion properties is discussed in view of recent experimental and theoretical results.

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Section: Introductionmentioning

confidence: 99%

Nonlinear stability ofEcenters inSi1−xGex: Electronic structure calculations

et al. 2008

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“…Additional recent work on the diffusion of radioactive 71 Ge into SiGe, demonstrated a change in the activation energy at 25% Ge [Strohm, 2001]. Ge as a function of Si content at 1100 °C (triangles), 1000 °C (circles), and 900 °C (squares).…”

Section: Self-diffusion In Silicon and Silicon Germaniummentioning

confidence: 97%

“…Previous efforts have concluded that self-diffusion in SiGe alloys occurs via interstitials on the Si rich side and via vacancies on the Ge rich side of SiGe composition [Strohm, 2001]. However, little conclusive evidence has been presented as to the cause of the transition, and the precise composition at which it occurs.…”

Section: Motivation and Brief History Of Diffusion In Si And Sigementioning

confidence: 99%

Diffusion in silicon isotope heterostructures

Silvestri¹

2004

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The simultaneous diffusion of Si and the dopants B, P, and As has been studied by the use of a multilayer structure of isotopically enriched Si. This structure, consisting of 5 pairs of 120 nm thick natural Si and 28 Si enriched layers, enables the observation of 30 Si self-diffusion from the natural layers into the 28 Si enriched layers, as well as dopant diffusion from an implanted source in an amorphous Si cap layer, via Secondary Ion Mass Spectrometry (SIMS). The dopant diffusion created regions of the multilayer structure that were extrinsic at the diffusion temperatures. In these regions, the Fermi level shift due to the extrinsic condition altered the concentration and charge state of the native defects involved in the diffusion process, which affected the dopant and selfdiffusion.The simultaneously recorded diffusion profiles enabled the modeling of the coupled dopant and self-diffusion. From the modeling of the simultaneous diffusion, the dopant diffusion mechanisms, the native defect charge states, and the self-and dopant diffusion coefficients can be determined. This information is necessary to enhance the physical modeling of dopant diffusion in Si. It is of particular interest to the modeling of pushing me to achieve. I am grateful to Ana for her unwavering love and support, for giving me the time during this busy year to write this thesis, but also for knowing when I need a break.

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“…We suggest that this is due to the decrease of the transport capacity D i C i * of interstitials in Si-Ge alloys when the Ge content increases (where D i the coefficient of diffusion and C i * the equilibrium interstitial concentration). This fact can be attributed to two possibilities or any combination of these two (i) a change of the diffusion mechanisms in SiGe alloys when increasing the Ge content [14], (ii) an increase in the recombination rate between interstitials and vacancies when increasing the Ge content.…”

Section: Figurementioning

confidence: 99%

The effect of Ge content on the formation and evolution of {113} defects in SiGe alloys

Laânab

Belafhaili

Cristiano

et al. 2013

Phys. Status Solidi C

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The aim of this work is to study the influence of the Ge content on the {113} defects formed, after a (35 keV, 1 × 1015 Ge+/cm2) preamorphization step followed by annealing at 680 °C, in relaxed SiGe alloys. For that, plan‐view Transmission Electron Microscopy (PTEM) under appropriate imaging conditions was used to study the {113} defects evolution as a function of the Ge content. Experimental results show that, increasing the Ge content results in a net reduction of both the density and the size of the {113} defects. Results analysis was performed in the framework of the “excess interstitials” model which describes perfectly the observed decrease of the {113} defects density in Si. Moreover, through a confrontation between the TEM observations and the predictions of this model, we show that the density of the interstitials contained in the defects (deduced from PTEM images) is a quasi linear function of the density of excess interstitials generated during the preamorphization step beneath the c/a interface, as calculated by the SRIM code. We conclude that collisional arguments can appropriately explain the observed evolution of the {113} defects density as a function of the Ge content. Meanwhile, the observed reduction of the {113} defects size with the Ge content, may be ascribed to a decrease of the transport capacity DiCi*, responsible for the defects growth. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Self-diffusion of 71Ge in Si–Ge

Cited by 28 publications

References 8 publications

Nonlinear stability ofEcenters inSi1−xGex: Electronic structure calculations

Nonlinear stability ofEcenters inSi1−xGex: Electronic structure calculations

Diffusion in silicon isotope heterostructures

The effect of Ge content on the formation and evolution of {113} defects in SiGe alloys

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