Self-consistent theory of localization and Coulomb drag effect

Tanatar, B.; Das, A. K.

doi:10.1103/physrevb.61.15959

Cited by 7 publications

(5 citation statements)

References 39 publications

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“…Jacoboni and Price 13 have employed coupled Monte Carlo/molecular dynamics methods to investigate the interlayer momentum transfer caused by short-range interactions between 3D electrons in two adjacent Si channels, finding that significant energy transfer rates are possible. What differentiates these studies from the present one is not so much the different system under investigation ͑the interaction between a 2DEG, the inverted Si substrate, and a 3DEG, the depleted Si gate͒ since a coupled 2D/3D system has been considered before; 6,7,14 rather, it is the different final result we seek ͑the calculation of the electron mobility in real devices, rather than the temperature depedence of the momentum-transfer rates or the relations between Coulomb interactions, disorder and localization 15 ͒. Most notably, the fact that none of the previous studies has accounted for the long-range, plasmon contribution to the drag, a notable exception being the work by Flensberg and Hu.…”

Section: Introductionmentioning

confidence: 93%

Long-range Coulomb interactions in small Si devices. Part II. Effective electron mobility in thin-oxide structures

Fischetti

2001

Journal of Applied Physics

132

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In metal–oxide–semiconductor structures with polycrystalline Si gates, electrons in the inverted channel of the substrate scatter with electrons in the gate via long-range Coulomb interactions. For thin oxides, these interactions can cause a significant transfer of momentum from the channel to the gate, thus reducing the effective mobility of the two-dimensional electron gas in the substrate. We present calculations of the dispersion of the interface plasmons in poly-Si/SiO2/Si structures, comparing the results obtained in the long-wavelength limit to those obtained using the random-phase approximation. Employing the former model, we compute the effect of plasmon scattering on the effective electron mobility in Si inversion layers. We find a significant reduction of the mobility for oxides thinner than about 3 nm.

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Section: Introductionmentioning

confidence: 93%

Long-range Coulomb interactions in small Si devices. Part II. Effective electron mobility in thin-oxide structures

Fischetti

2001

Journal of Applied Physics

132

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“…In recent years, though the coupled systems have been well investigated at absolute zero, yet, it is equally important to explore them at finite-T as the experiments can only be performed at non-zero T. However, a considerable theoretical work has been done at finite-T to study the coupled quantum layers [27][28][29][30][31][32][33][34], but, modest efforts have been made in case of the coupled quantum wires [35,36]. In coupled quantum layers, Rafee and co-workers have recently studied the dynamic dielectric function [31] and quasi-particle inelastic scattering rate [32] at finite-T by taking into account the exchange-correlation effects.…”

Section: Introductionmentioning

confidence: 99%

“…In coupled quantum layers, Rafee and co-workers have recently studied the dynamic dielectric function [31] and quasi-particle inelastic scattering rate [32] at finite-T by taking into account the exchange-correlation effects. Recently, Priya et al [33] have investigated the dynamic correlation effects on drag resistivity of an e-e bilayer system at finite-T. On the other hand, for a coupled quantum wire system the T-dependence [35,36] and disorder effects [36] on the drag rate have been explored by Tanatar in the RPA. It was found that the collective modes influence the inter-wire interactions significantly and enhance the drag rate.…”

Section: Introductionmentioning

confidence: 99%

Exchange-correlation effects in coupled quantum wire systems at finite temperature

Sharma¹,

Garg²,

Moudgil³

2022

Phys. Scr.

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We investigate the exchange-correlation effects in coupled quantum wire systems at finite-temperature within the self-consistent mean-field approximation of Singwi et al by assuming the charge carriers to be electrons in one wire and electrons or heavier holes in the other. Numerical results are presented for the intra- and inter-wire static structure factors, pair-correlation functions and the static charge density susceptibility over a wide range of system parameters (viz. temperature T, particle number density and inter-wire spacing) at equal and fixed transverse width of boththe wires. We find for the first time that the coupled electron-hole (e-h) quantum wire system may favor a charge-density-wave (CDW) instability at sufficiently low T and carrier density in the close proximity of the wires, where as no such phase transition is observed in the electron-electron (e-e) quantum wire system at any non-zero T. The intra-wire contact pair-correlation functions of both the systems show a non-monotonous behavior with increasing (decreasing) T (carrier number density), and increase consistently with decrease in inter-wire spacing. On the other hand, the corresponding inter-wire contact pair-correlation functions show a non-monotonous T - dependence and consistent increase with decrease in carrier number density and/or inter-wire separation. Results of free exchange-correlation energy for both the e-h and e-e coupled systems are also reported which are found to have a noticeable dependence upon T. To highlight the effect of exchange-correlations, our results have been compared with the predictions of the random-phase approximation (RPA).

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“…The interlayer Coulomb interaction plays a significant role in these correlated systems. In the Coulomb drag phenomenon, momentum can be transferred from inter acting electrons in one layer to electrons in the adjacent layer [22][23][24][25][26][27]. The momentum transfer takes place through inter layer Coulomb interaction, but does not involve any carrier exchanges.…”

Section: Introductionmentioning

confidence: 99%

Coulomb drag in anisotropic systems: a theoretical study on a double-layer phosphorene

Saberi-Pouya

Vazifehshenas

Farmanbar

et al. 2016

J. Phys.: Condens. Matter

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We theoretically study the Coulomb drag resistivity in a double-layer electron system with highly anisotropic parabolic band structure using Boltzmann transport theory. As an example, we consider a double-layer phosphorene on which we apply our formalism. This approach, in principle, can be tuned for other double-layered systems with paraboloidal band structures. Our calculations show the rotation of one layer with respect to another layer can be considered a way of controlling the drag resistivity in such systems. As a result of rotation, the off-diagonal elements of drag resistivity tensor have non-zero values at any temperature. In addition, we show that the anisotropic drag resistivity is very sensitive to the direction of momentum transfer between two layers due to highly anisotropic inter-layer electron-electron interaction and also the plasmon modes. In particular, the drag anisotropy ratio, ρ yy /ρ xx , can reach up to ∼ 3 by changing the temperature. Furthermore, our calculations suggest that including the local field correction in dielectric function changes the results significantly. Finally, We examine the dependence of drag resistivity and its anisotropy ratio on various parameters like inter-layer separation, electron density, short-range interaction and insulating substrate/spacer.

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Self-consistent theory of localization and Coulomb drag effect

Cited by 7 publications

References 39 publications

Long-range Coulomb interactions in small Si devices. Part II. Effective electron mobility in thin-oxide structures

Long-range Coulomb interactions in small Si devices. Part II. Effective electron mobility in thin-oxide structures

Exchange-correlation effects in coupled quantum wire systems at finite temperature

Coulomb drag in anisotropic systems: a theoretical study on a double-layer phosphorene

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