Self-consistent simulation of array-based CNFETs: Impact of tube pitch on RF performance

Holland, Kyle D.; Paydavosi, Navid; Vaidyanathan, Mani

doi:10.1109/iwce.2010.5677957

Cited by 7 publications

(2 citation statements)

References 15 publications

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“…A phenomenological analysis of the transport in multi-1D-channel devices is given next by considering that (i) screening effects due to tube/wire interactions are negligible and (ii) there are not Schottky points within the channel. The first can be fulfilled in devices with a relaxed pitch [14][15][16] whereas the latter is achieved in devices with tubes/wires properly aligned, a technology condition achievable for both CNTFET 31 and NWFET 32 technologies.…”

Section: Transport Injection Mechanisms and 1d-lbm In Multi-1d Fetsmentioning

confidence: 99%

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Schottky-like barrier characterization of field-effect transistors with multiple quasi-ballistic channels

Pacheco‐Sanchez

Torrent

Jiménez

2022

Journal of Applied Physics

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The potential barrier height at the interface formed by a metal contact and multiple one-dimensional (1D) quasi-ballistic channels in field-effect transistors is evaluated across different carbon nanotube and nanowire device technologies by means of a Landauer–Büttiker-based extraction methodology (LBM) adapted for multiple 1D-channels. The extraction methodology yields values for an effective Schottky barrier height and a gate coupling coefficient, an indicator of the device working at the quantum capacitance limit. The novel LBM-based approach embracing the mechanisms in 1D electronics is compared to the conventional activation energy method not considering such effects. The latter approach underestimates the potential barrier height at metal–channel interfaces in comparison to the novel methodology. A test structure based on a displaced gate device is proposed based on numerical device simulation results toward an improved accuracy of the method.

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Section: Transport Injection Mechanisms and 1d-lbm In Multi-1d Fetsmentioning

confidence: 99%

“…In contrast to single-1D-channel devices, multi-tube (MT) or multi-wire (MW) transistors present improved overall device characteristics, e.g., higher driving current capabilities and dynamic figures of merit [10][11][12][13][14][15][16] . However, discussions on transport and injection phenomena in 1D…”

Section: Introductionmentioning

confidence: 99%