1998
DOI: 10.2514/2.566
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Self-Consistent Modeling of Volume and Surface Processes in Air Plasma

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Cited by 27 publications
(31 citation statements)
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References 37 publications
(66 reference statements)
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“…Figure further reveals that the global behavior of the recombination probability with T w is the outcome of the interplay between the E‐R and L‐H recombination mechanisms. For T w below about 380 K Langmuir‐Hinshelwood recombination (R6) is dominant, in agreement with the conclusions from . Under the current assumptions, recombination between two physisorbed atoms (R7) becomes noticeable below 280 K and dominates at wall temperatures lower than 250 K. This can be explained by a fast increase of the coverage of physisorption sites as the wall temperature is decreased.…”
Section: Simulation Of Atomic Recombination On Surfacessupporting
confidence: 89%
“…Figure further reveals that the global behavior of the recombination probability with T w is the outcome of the interplay between the E‐R and L‐H recombination mechanisms. For T w below about 380 K Langmuir‐Hinshelwood recombination (R6) is dominant, in agreement with the conclusions from . Under the current assumptions, recombination between two physisorbed atoms (R7) becomes noticeable below 280 K and dominates at wall temperatures lower than 250 K. This can be explained by a fast increase of the coverage of physisorption sites as the wall temperature is decreased.…”
Section: Simulation Of Atomic Recombination On Surfacessupporting
confidence: 89%
“…At 300 K, the model of Guerra for O recombination on silica indicated that O recombination reported by Kim and Boudart, Gordiets and Ferreira, Greaves and Linnett, and Stewart et al is mainly via a L−H process. This suggests that the L−H component would also be the major pathway for O recombination on the silica-coated alumina surface near 300 K in the present study.…”
Section: Discussionmentioning
confidence: 99%
“…These discharges are known to produce some active species of interest for applications, such as O( 3 P ) atoms, O 2 (a 1 g ) metastables, NO, NO 2 and N 2 O nitric oxides, and ozone O 3 . Kinetic studies of low-pressure N 2 -O 2 discharges at much higher O 2 percentages were conducted up to air conditions (20% O 2 ) in [50] and up to 100% O 2 in [33,51,52]. In these papers, the surface kinetics of N( 4 S) and O( 3 P ) atoms were also included in the models.…”
Section: Discharges and Post-discharges In N 2 -O 2 Plasmasmentioning
confidence: 99%