Self-Consistent Analysis of Carrier Confinement and Output Power in 1.3-$\mu{\hbox {m}}$ InAs–GaAs Quantum-Dot VCSELs

Xu, Dawei; Yoon, Soon Fatt; Tong, Cunzhu

doi:10.1109/jqe.2008.925136

Cited by 30 publications

(21 citation statements)

References 26 publications

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“…P cv represents the transition matrix and |P cv | 2 is approximated as 2m 0 E g cv for InAs QDs [18]. The homogeneous broadening of QDs is modeled by a Lorentzian line shape function as…”

Section: (7)mentioning

confidence: 99%

Gain and Phase Dynamics of QD-VCSOA Under Electrical and Optical Pumping

Sahraee¹,

Zarifkar

2014

J. Lightwave Technol.

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The effect of pumping methods on the gain and phase dynamics of quantum-dot vertical cavity semiconductor optical amplifier is investigated. The gain and phase recovery time is considered at the ground state transition wavelength. By including the effect of the excited state and wetting layer on the refractive index change, it is shown that under electrical pumping, the better gain dynamics is achieved compared to the optical pumping scheme. However, the phase recovery time can be accelerated by optical pumping. These behaviors result from the different mechanisms of population inversion in these two pumping methods.Index Terms-Electrical pumping, gain recovery, optical pumping, phase recovery, quantum dots (QDs), vertical-cavity semiconductor optical amplifier (VCSOA).

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“…P cv represents the transition matrix and |P cv | 2 is approximated as 2m 0 E g cv for InAs QDs [18]. The homogeneous broadening of QDs is modeled by a Lorentzian line shape function as…”

Section: (7)mentioning

confidence: 99%

Gain and Phase Dynamics of QD-VCSOA Under Electrical and Optical Pumping

Sahraee¹,

Zarifkar

2014

J. Lightwave Technol.

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“…Until now, several static and dynamic characteristics of 1.3-µm InAs-GaAs QD VCSELs have been investigated experimentally [6][7][8]. Many theoretical models have been presented, such as as simple phenomenological rate equations model [9,10]. In [11], finite-difference time-domain (FDTD) method is used together with QD Maxwell-Bloch equations to find electric field propagation and microscopic carrier dynamics.…”

Section: Introductionmentioning

confidence: 99%

Time-Domain Travelling-Wave Model for Quantum Dot Based Vertical Cavity Laser Devices

Abouelez¹,

El-Diwany²,

Mashade³

et al. 2018

PIER M

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A self-consistent time-domain travelling-wave model for the simulation of self-assembled quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) is developed. The 1-D time-domain travelling-wave model takes into consideration of time-varying QD optical susceptibility, refractive index variation resulting from intersubband free-carrier absorption, homogeneous and inhomogeneous broadening, and QD spontaneous emission noise source. Carrier concentration rate equations are considered simultaneously with the travelling wave model. Effects of temperature on optical susceptibility and carrier density in the active region are taken into account. The model is used to analyze the characteristics of 1.3-µm oxide-confined QD InAs-GaAs VCSEL. The field distribution resulting from time-domain travelling-wave equations, in both the active region and distributed Bragg reflectors, is obtained and used in finding the device characteristics including light-current static characteristics considering the thermal effect. Furthermore, the dynamic characteristics and modulation frequency response are obtained in terms of inhomogeneous broadening.

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“…VCSELs in the recent years have attracted many attentions because of their relative advantages such as, low threshold current, high modulation speed and single-mode operation (Coldren and Corzine 1995;Bimberg et al 1999;Sugawara 1999;Chuang 2009;Xu et al 2008;Abbaspour et al 2011). Their applications are expanded beyond the optical communication systems toward the optical interconnects and optical signal processing systems (Wilmsen et al 1999).…”

Section: Introductionmentioning

confidence: 99%

Circuit-level implementation of quantum-dot VCSEL

et al. 2016

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In this paper, for the first time a circuit model of quantum dot InGaAs-GaAs VCSEL including thermal effects is presented. The model is able to predict L-I characteristics for a range of ambient temperatures that the simulation results reveal a good agreement with experimental data reported in literatures. Also the effects of carrier dynamics on the QD-VCSEL performance are simulated that is accordance with results reported by other researcher. The parameters affecting high-speed optical modulation techniques, particularly on-off keying, such as turn-on delay, relaxation oscillations frequency (f ro ) and cutoff frequency for different level modulation currents are investigated. The model is compatible with circuit analysis programs.

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Self-Consistent Analysis of Carrier Confinement and Output Power in 1.3-$\mu{\hbox {m}}$ InAs–GaAs Quantum-Dot VCSELs

Cited by 30 publications

References 26 publications

Gain and Phase Dynamics of QD-VCSOA Under Electrical and Optical Pumping

Gain and Phase Dynamics of QD-VCSOA Under Electrical and Optical Pumping

Time-Domain Travelling-Wave Model for Quantum Dot Based Vertical Cavity Laser Devices

Circuit-level implementation of quantum-dot VCSEL

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