2019
DOI: 10.1021/acs.chemmater.8b04456
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Self-Catalyzed, Low-Temperature Atomic Layer Deposition of Ruthenium Metal Using Zero-Valent Ru(DMBD)(CO)3 and Water

Abstract: Ruthenium (Ru) films are deposited using atomic layer deposition (ALD), promoted by a self-catalytic reaction mechanism. Using zero-valent, η 4 -2,3-dimethylbutadiene Ruthenium tricarbonyl (Ru(DMBD)(CO) 3 ) and H 2 O, Ru films are deposited at a rate of 0.1 nm/cycle. The temperature for steady deposition lies between 160 and 210 °C. Film structure and composition are confirmed via X-ray diffraction, high-resolution transmission electron microscopy, and X-ray photoelectron spectroscopy. The room-temperature ele… Show more

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Cited by 26 publications
(46 citation statements)
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“…The increase in pore radius after 75 cycles compared to the blank may be due to changes in the internal structure during ALD. Overall, the total pore volume decreased as the Ru deposition constricted the pores after ALD; this is consistent with prior literature [39,40]. The surface morphology of Ru 75 @Al 2 O 3 was imaged by Scanning Electron Microscopy (SEM) (Figure 1D,E).…”
Section: Resultssupporting
confidence: 89%
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“…The increase in pore radius after 75 cycles compared to the blank may be due to changes in the internal structure during ALD. Overall, the total pore volume decreased as the Ru deposition constricted the pores after ALD; this is consistent with prior literature [39,40]. The surface morphology of Ru 75 @Al 2 O 3 was imaged by Scanning Electron Microscopy (SEM) (Figure 1D,E).…”
Section: Resultssupporting
confidence: 89%
“…Growth was achieved utilizing an A-B cycle of alternating η4-2,3-dimethylbutadiene ruthenium tricarbonyl (Ru(DMBD)(CO) 3 ) as a zero-valent ruthenium precursor and water as a co-reactant (Figure 1B). Previous work from one of our groups has shown this specific process to produce metallic Ru [39]. Using A-B cycle sets of 50 and 75, two different materials were prepared: denoted as Ru 50 @Al 2 O 3 and Ru 75 @Al 2 O 3 , respectively.…”
Section: Resultsmentioning
confidence: 99%
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“…25,35,36 To date, a variety of Ru precursors have been examined for Ru ALD including metallocenes, β-diketonates and their derivatives, 25 and recently, zerovalent precursors. 12,[37][38][39] Typically, Ru ALD from metallocene or β-diketonate precursors suffers from long nucleation delays. 25 In addition to requiring a longer process time, recipes with long nucleation delays can result in films with rough interfaces as a result of island formation during the initial growth.…”
Section: Introductionmentioning
confidence: 99%