Self-catalyzed growth of dilute nitride GaAs/GaAsSbN/GaAs core-shell nanowires by molecular beam epitaxy

Kasanaboina, Pavan Kumar; Ahmad, Estiak; Li, Jia; Reynolds, C. L.; Liu, Yang; Iyer, Shanthi

doi:10.1063/1.4930887

Cited by 22 publications

(58 citation statements)

References 22 publications

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“…The self-catalyzed NWs were grown on chemically cleaned (Piranha/HF) p-type Si (111) substrates at 620 °C with a constant group V beam equivalent pressure (BEP) of 4.8 × 10 −6 Torr and group III BEP of 2.4 × 10 −7 Torr (unless otherwise mentioned) 11, 32, 33 . Growth was initiated by opening the Ga shutter 15 sec prior to opening of the As and Sb shutters.…”

Section: Methodsmentioning

confidence: 99%

“…One of the favorable attributes of GaAsSb NWs is that the NWs exhibit pure ZB crystal structure over the entire composition range 9 . Bandgap tuning corresponding to the desirable wavelength of 1.3 µm in the telecommunication window has been demonstrated 10, 11 with a core-shell configuration. However, these nanowires suffer from a high density of planar defects with detrimental impact on the optoelectronic quality of the NWs.…”

Section: Introductionmentioning

confidence: 99%

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A Two-Step Growth Pathway for High Sb Incorporation in GaAsSb Nanowires in the Telecommunication Wavelength Range

Ahmad

Karim

Hafiz

et al. 2017

Sci Rep

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Self-catalyzed growth of axial GaAs1−xSbx nanowire (NW) arrays with bandgap tuning corresponding to the telecommunication wavelength of 1.3 µm poses a challenge, as the growth mechanism for axial configuration is primarily thermodynamically driven by the vapor-liquid-solid growth process. A systematic study carried out on the effects of group V/III beam equivalent (BEP) ratios and substrate temperature (Tsub) on the chemical composition in NWs and NW density revealed the efficacy of a two-step growth temperature sequence (initiating the growth at relatively higher Tsub = 620 °C and then continuing the growth at lower Tsub) as a promising approach for obtaining high-density NWs at higher Sb compositions. The dependence of the Sb composition in the NWs on the growth parameters investigated has been explained by an analytical relationship between the effective vapor composition and NW composition using relevant kinetic parameters. A two-step growth approach along with a gradual variation in Ga-BEP for offsetting the consumption of the droplets has been explored to realize long NWs with homogeneous Sb composition up to 34 at.% and photoluminescence emission reaching 1.3 µm at room temperature.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Two-Step Growth Pathway for High Sb Incorporation in GaAsSb Nanowires in the Telecommunication Wavelength Range

Ahmad

Karim

Hafiz

et al. 2017

Sci Rep

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“…Both the Sb and N shutters were closed for growth of the final GaAs shell at 540 °C. Detailed growth procedures and characterization techniques are provided in our previous reports [ 11 , 13 , 14 ]. Basically, TEM, PL, and Raman were used to reveal differences in these nanowires before and after annealing.…”

Section: Methodsmentioning

confidence: 99%

“…However, little work has been reported on dilute nitride GaAsSbN nanowires due to the complexities involved in growth of quaternary alloy nanowires. Recently, we have reported successful growth of self-catalyzed GaAs/GaAsSbN/GaAs core-multi-shell nanowires emitting at ~1.3 μm [ 11 ]. These nanowires exhibited planar defects in addition to point defects, which is in contrast to thin films where only the latter dominates [ 12 ].…”

Section: Introductionmentioning

confidence: 99%

Effects of Annealing on GaAs/GaAsSbN/GaAs Core-Multi-shell Nanowires

et al. 2016

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The effects of ex-situ annealing in a N2 ambient on the properties of GaAs/GaAsSbN/GaAs core-multi-shell nanowires on Si (111) substrate grown by self-catalyzed molecular beam epitaxy (MBE) are reported. As-grown nanowires exhibit band edge emission at ~0.99 eV with a shoulder peak at ~0.85 eV, identified to arise from band tail states. A large red shift of 7 cm−1 and broadened Raman spectra of as-grown nanowires compared to that of non-nitride nanowires confirmed phonon localization at N-induced localized defects. On annealing nanowires to 750 °C, there was no change in the planar defects in the nanowire with respect to the as-grown nanowire; however, vanishing of the photoluminescence (PL) peak corresponding to band tail states along with enhanced band edge PL intensity, recovery of the Raman shift and increase in the Schottky barrier height from 0.1 to 0.4 eV clearly point to the efficient annihilation of point defects in these GaAsSbN nanowires. A significant reduction in the temperature-induced energy shift in the annealed nanowires is attributed to annihilation of band tail states and weak temperature dependence of N-related localized states. The observation of room temperature PL signal in the 1.3 μm region shows that the strategy of adding small amounts of N to GaAsSb is a promising route to realization of efficient nanoscale light emitters with reduced temperature sensitivity in the telecommunication wavelength region.

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“…NW lasers based on GaAs/GaNAs core/shell structures have been demonstrated [184]. For III-Sb NWs, several attempts have been made to incorporate a few percents of nitrogen atoms into III-Sb NWs to form quaternary NW or shell layers [24,185,186]. After developing the material, creating the heterostructure is also important.…”

Section: Outlook and Conclusionmentioning

confidence: 99%

Recent advances in III-Sb nanowires: from synthesis to applications

Yip

Shen

2019

Nanotechnology

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The excellent properties of III-V semiconductors make them intriguing candidates for nextgeneration electronics and optoelectronics. Their nanowire (NW) counterparts further provide interesting geometry and a quantum confinement effect which benefits various applications. Among the many members of all the III-V semiconductors, III-antimonide NWs have attracted significant research interest due to their narrow, direct bandgap and high carrier mobility. However, due to the difficulty of NW fabrication, the development of III-antimonide NWs and their corresponding applications are always a step behind the other III-V semiconductors. Until recent years, because of advances in understanding and fabrication techniques, electronic and optoelectronic devices based on III-antimonide NWs with novel performance have been fabricated. In this review, we will focus on the development of the synthesis of III-antimonide NWs using different techniques and strategies for fine-tuning the crystal structure and composition as well as fabricating their corresponding heterostructures. With such development, the recent progress in the applications of III-antimonide NWs in electronics and optoelectronics is also surveyed. All these discussions provide valuable guidelines for the design of III-antimonide NWs for next-generation device utilization.

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Self-catalyzed growth of dilute nitride GaAs/GaAsSbN/GaAs core-shell nanowires by molecular beam epitaxy

Cited by 22 publications

References 22 publications

A Two-Step Growth Pathway for High Sb Incorporation in GaAsSb Nanowires in the Telecommunication Wavelength Range

A Two-Step Growth Pathway for High Sb Incorporation in GaAsSb Nanowires in the Telecommunication Wavelength Range

Effects of Annealing on GaAs/GaAsSbN/GaAs Core-Multi-shell Nanowires

Recent advances in III-Sb nanowires: from synthesis to applications

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