Self-assembly, stability, and photoresponse of PbS quantum dot films capped with mixed halide perovskite ligands

Aynehband, Samaneh; Mohammadi, Maryam; Poushimin, Rana; Azar, Mahdi Hasanzadeh; Nunzi, Jean‐Michel; Simchi, A.

doi:10.1016/j.materresbull.2021.111648

Cited by 5 publications

(7 citation statements)

References 64 publications

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“…S atoms on (001) facet of PbS QDs are connected to these Sn dangling bonds and passivates the surface of SnO 2 film 29 . After the PVK precursor was spin‐coated, PbS QDs contacted the PVK solution and the OA ligands are desorbed in polar solvent DMF and exchanged by halide ions on the PbS surface 17,29–31 . Afterwards, the PVK can grow on the surface of PbS QDs at the stage (III) 5,32,33 .…”

Section: Resultsmentioning

confidence: 99%

“…29 After the PVK precursor was spin-coated, PbS QDs contacted the PVK solution and the OA ligands are desorbed in polar solvent DMF and exchanged by halide ions on the PbS surface. 17,[29][30][31] Afterwards, the PVK can grow on the surface of PbS QDs at the stage (III). 5,32,33 Though the OA ligands may not be completely washed away from PbS QDs, the OA ligands are not expected to improve the crystal structure and microstructure of the perovskite layer.…”

Section: Pbs Passivation Of the Interface Between Sno 2 And Perovskit...mentioning

confidence: 99%

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Controlled growth of uniform and dense perovskite layers on SnO₂ via interface passivation by PbS quantum dots

Liu,

Bae,

Lee

et al. 2024

EcoMat

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Formamidinium lead iodide (FAPbI3) and SnO2 are a promising pair of halide perovskite and electron transport layer (ETL). However, FAPbI3 and SnO2 have inherent problems such as high crystallization temperature of FAPbI3 and surface defects of SnO2 like oxygen vacancies. They cause low crystallinity, non‐uniform grain growth, and more interface defects, leading to carrier recombination and leakage current. The passivation of the interface between FAPbI3 and SnO2 is an effective process to address these materials issues. Herein, a dual role of lead sulfide (PbS) quantum dots (QDs) in the interface passivation is explored. PbS QDs which are introduced to the interface between FAPbI3 and ETL, link to Sn‐dangling bonds of SnO2 ETLs and anchor the iodine atoms of FAPbI3. This changes considerably lower nonradiative recombination, achieve a better energetic alignment between ETL and PbI3, and facilitate electron extraction, leading to a power conversion efficiency of 21.66%.image

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Section: Resultsmentioning

confidence: 99%

Section: Pbs Passivation Of the Interface Between Sno 2 And Perovskit...mentioning

confidence: 99%

Controlled growth of uniform and dense perovskite layers on SnO₂ via interface passivation by PbS quantum dots

Liu,

Bae,

Lee

et al. 2024

EcoMat

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“…Samaneh et al used organic–inorganic perovskites with mixed halides for the solid-state exchange of oleic acid ligands on PbS QDs in 2021 [ 78 ]. A compact arrangement of the nanocrystals was procured in a thin film (~100 nm) via self-assembling.…”

Section: Self-assembly Methods Of Quantum Dotsmentioning

confidence: 99%

Development of Self-Assembly Methods on Quantum Dots

Hao

et al. 2023

Materials

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Quantum dot materials, with their unique photophysical properties, are promising zero-dimensional materials for encryption, display, solar cells, and biomedical applications. However, due to the large surface to volume ratio, they face the challenge of chemical instability and low carrier transport efficiency, which have greatly limited their reliability and utility. In light of the current development bottleneck of quantum dot materials, the chemical stability and physical properties can be effectively improved by the self-assembly method. This review will discuss the research progress of the self-assembly methods of quantum dots and analyze the advantages and disadvantages of those self-assembly methods. Furthermore, the scientific challenges and improvement in the self-assembly method of quantum dots are prospected.

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“…6 Besides, the long surface ligands also influence charge kinetics by introducing a thick, high energy barrier to charge transport. 7,8 Therefore, many optoelectronic devices based on QD thin films suffer from this bottleneck, especially the photodetectors (PDs) that require the fast extraction of charges with little recombination loss. Regarding this problem, two-dimensional (2D) semiconductors were adopted as a single, separate channel layer to help with charge extraction in photoconduction and phototransistor structured QD PDs, which was proved to be an efficient way to improve the photodetecting performance of these devices.…”

Section: Introductionmentioning

confidence: 99%

A hybrid quantum dot:MXene bulk heterojunction for an efficient infrared self-powered photodetector

Huang,

Ding,

Tan

et al. 2023

J. Mater. Chem. C

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Self-assembly, stability, and photoresponse of PbS quantum dot films capped with mixed halide perovskite ligands

Cited by 5 publications

References 64 publications

Controlled growth of uniform and dense perovskite layers on SnO₂ via interface passivation by PbS quantum dots

Controlled growth of uniform and dense perovskite layers on SnO₂ via interface passivation by PbS quantum dots

Development of Self-Assembly Methods on Quantum Dots

A hybrid quantum dot:MXene bulk heterojunction for an efficient infrared self-powered photodetector

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Self-assembly, stability, and photoresponse of PbS quantum dot films capped with mixed halide perovskite ligands

Cited by 5 publications

References 64 publications

Controlled growth of uniform and dense perovskite layers on SnO2 via interface passivation by PbS quantum dots

Controlled growth of uniform and dense perovskite layers on SnO2 via interface passivation by PbS quantum dots

Development of Self-Assembly Methods on Quantum Dots

A hybrid quantum dot:MXene bulk heterojunction for an efficient infrared self-powered photodetector

Contact Info

Product

Resources

About

Controlled growth of uniform and dense perovskite layers on SnO₂ via interface passivation by PbS quantum dots

Controlled growth of uniform and dense perovskite layers on SnO₂ via interface passivation by PbS quantum dots