Self-assembly of porous Cu structures during steady-state condensation of weakly supersaturated vapors

Perekrestov, V. I.; Kosminska, Yu. O.; Kornyushchenko, A. S.; Latyshev, Vitalii

doi:10.1007/s10934-014-9868-6

Cited by 8 publications

(4 citation statements)

References 32 publications

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“…The described above structure formation mechanisms under near-equilibrium conditions in the chemically active mediumcondensate system to the great extent correspond to the structure formation mechanisms in the plasma-condensate system [44,52,53]. For both technological solutions, near-equilibrium condensation allows to implement the transition from layer-bylayer to the normal growth of round shaped crystals together with self-organization of their identical size due to Ostwald ripening.…”

Section: Resultsmentioning

confidence: 78%

“…For both technological solutions, near-equilibrium condensation allows to implement the transition from layer-bylayer to the normal growth of round shaped crystals together with self-organization of their identical size due to Ostwald ripening. Besides that, the porous structures consisting of weakly bound faceted crystals [53] and round shaped crystals [44,52] can be grown realizing both of these two methods. At the same time, whiskers grow more effectively using CVD technology, but in the plasma-condensate system more morphologically diverse structures with less oxygen content can be formed [53].…”

Section: Resultsmentioning

confidence: 99%

“…In our previous works [44,52,53] the nucleation and growth of copper layers under near-equilibrium conditions in plasmacondensate system have already been studied. That is why copper has been selected in this work as a material for comparative analysis.…”

Section: Introductionmentioning

confidence: 99%

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Formation of copper porous structures under near-equilibrium chemical vapor deposition

Kornyushchenko

Natalich

Perekrestov

2016

Journal of Crystal Growth

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a b s t r a c tThe mechanism of copper structure formation under near-equilibrium conditions in a chemically-active medium-condensate system has been investigated. The desired conditions have been implemented using CVD system. Copper chloride CuCl 2 was used as a source material, and mixture of hydrogen with nitrogen served as a working gas. The influence of the evaporation temperature, condensation temperature and state of the growth surface on the porous structures formation has been investigated. It has been established, that the structure formation mechanism is determined by layer-by-layer or normal crystal growth, nucleation and growth of whiskers, and also by partial intergrowth of structural elements.

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Section: Resultsmentioning

confidence: 78%

Section: Resultsmentioning

confidence: 99%

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Formation of copper porous structures under near-equilibrium chemical vapor deposition

Kornyushchenko

Natalich

Perekrestov

2016

Journal of Crystal Growth

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“…This conclusion is consistent with the morphology identified in the SEM images presented in figure 2 where an enhancement in the porosity is observed as a function of the deposition temperature at a constant power applied to the target. A study has shown that it is possible to obtain pure nanoporous copper directly by magnetron sputtering deposition at 570 °C [21]. This strong modification of morphology is attributed to a repeated nucleation growth on copper grains and an incomplete intergrowth which leads to a high porosity.…”

Section: Resultsmentioning

confidence: 99%

Effect of temperature on the synthesis of nanoporous carbon from copper/carbon thin films to nanoporous carbon for sensing applications

et al. 2017

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, et al.. Effect of temperature on the synthesis of nanoporous carbon from copper/carbon thin films to nanoporous carbon for sensing applications. Thin Solid Films, Elsevier, 2017Elsevier, , 630, pp.59-65. <10.1016Elsevier, /j.tsf.2016.014>. A C C E P T E D M A N U S C R I P T ACCEPTED MANUSCRIPT AbstractOver the last few years, a broad panel of carbon materials was proposed for sensing applications. Among these materials, nanoporous carbon (np-C) is of particular interest due to its high specific surface area and low fabrication cost. In this contribution, the synthesis of np-C thin films using an approach combining the growth of copper/carbon nanocomposite thin films by co-sputtering followed by a selective wet etching of copper in nitric acid is studied.By adjusting the deposition conditions (e.g., powers applied to the sputtering targets, deposition temperature) of the nanocomposite thin films, it is shown that the pore size and the structure of the carbon skeleton can be modified. Furthermore, the possibility of integrating such nanoporous materials in field effect transistors for sensing application is also demonstrated.

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Self-organized Growth by Sputtering and Other PVD Techniques

Kosminska¹,

Perekrestov²

2019

Lecture Notes in Mechanical Engineering

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Self-assembly of porous Cu structures during steady-state condensation of weakly supersaturated vapors

Cited by 8 publications

References 32 publications

Formation of copper porous structures under near-equilibrium chemical vapor deposition

Formation of copper porous structures under near-equilibrium chemical vapor deposition

Effect of temperature on the synthesis of nanoporous carbon from copper/carbon thin films to nanoporous carbon for sensing applications

Self-organized Growth by Sputtering and Other PVD Techniques

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