Self-Assembly in Semiconductor Epitaxy

Bhattacharya, Arnab; Bansal, Bhavtosh

doi:10.1016/b978-0-444-63304-0.00026-3

Cited by 8 publications

(2 citation statements)

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“…[23] Similar views on the idea of barrierless transformation of the ripples into faceted islands were suggested by Tromp et al [28] and by Tersoff et al [29] The contradiction of the above-mentioned concepts of nucleation and nucleationless formation of 3D islands, as well as many other aspects of the growth modes gave rise to intensive theoretical studies of the Stranski-Krastanov morphology by making use of both analytical approaches [31][32][33], and computer Monte Carlo [34][35][36][37] and molecular dynamics [38][39][40][41] simulations, and were debated in numerous review papers and monographs. [42][43][44][45]. However, among the most important questions remains the following: Is the nucleation concept of 3D clustering consistent with the wettability concept of Bauer?…”

Section: Introductionmentioning

confidence: 99%

Stranski–Krastanov mechanism of growth and the effect of misfit sign on quantum dots nucleation

Prieto

Markov

2017

Surface Science

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The thermodynamics of the Stranski-Krastanov mode of epitaxial growth and the effect of the sign of the lattice misfit are discussed. The Stranski-Krastanov mode of growth represents a sequence of layer-by-layer or Frank-van der Merwe growth followed by the formation of three-dimensional (3D) islands or Volmer-Weber growth. The occurrence of both growth modes mentioned above is in compliance with the wettability criterion of Bauer. The positive wetting function required for the occurrence of the Volmer-Weber growth is originated by the vertical displacements of the atoms close to the edges of the two-dimensional (2D) islands as a result of the relaxation of the lattice misfit. The monolayer high islands become unstable against bilayer islands, bilayer islands in turn become unstable against trilayer islands, etc. beyond some critical islands sizes. Monolayer islands appear as necessary precursors of three-dimensional (3D) islands. The critical island size for mono-bilayer transformation increases steeply with decreasing lattice misfit and diverges at a critical value of the misfit. This value divides the regions of Frank-van der Merwe and Stranski-Krastanov modes in a phase diagram of coordinates wetting-misfit. The transformation of monolayer to multilayer islands takes place either by consecutive nucleation and growth of 2D islands (layer-by-layer transformation), or by nucleation and lateral (2D) growth of multilayer islands (multilayer 2D transformation). The former occurs in the case of "stiff" overlayer materials and mostly in compressed overlayers. The latter takes place in the case of "soft" materials like Pb and In, mostly in tensile overlayers. Tensile films show non-nucleation transformation compared with the nucleation-like behavior of compressed films.

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Section: Introductionmentioning

confidence: 99%

Stranski–Krastanov mechanism of growth and the effect of misfit sign on quantum dots nucleation

Prieto

Markov

2017

Surface Science

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“…Both methods, derived from standard epitaxial growth modes, lead to coherent self-assembly of defect-free and optically active III-V QDs. The robustness and simplicity of SK growth led to its large dominance, with great achievements in both fundamental and technological areas [24][25][26] .…”

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Droplet epitaxy of semiconductor nanostructures for quantum photonic devices

et al. 2019

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The long dreamed 'quantum internet' would consist of a network of quantum nodes (solid-state or atomic systems) linked by flying qubits, naturally based on photons, travelling over long distances at the speed of light, with negligible decoherence. A key component is a light source, able to provide single or entangled photon pairs. Among the different platforms, semiconductor quantum dots (QDs) are very attractive, as they can be integrated with other photonic and electronic components in miniaturized chips. In the early 1990s two approaches were developed to synthetize self-assembled epitaxial semiconductor QDs, or 'artificial atoms'-namely, the Stranski-Krastanov (SK) and the droplet epitaxy (DE) methods. Because of its robustness and simplicity, the SK method became the workhorse to achieve several breakthroughs in both fundamental and technological areas. The need for specific emission wavelengths or structural and optical properties has nevertheless motivated further research on the DE method and its more recent development, local droplet etching (LDE), as complementary routes to obtain high-quality semiconductor nanostructures. The recent reports on the generation of highly entangled photon pairs, combined with good photon indistinguishability, suggest that DE and LDE QDs may complement (and sometimes even outperform) conventional SK InGaAs QDs as quantum emitters. We present here a critical survey of the state of the art of DE and LDE, highlighting the advantages and weaknesses, the achievements and challenges that are still open, in view of applications in quantum communication and technology.

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All-Optical Detection of Biocompatible Quantum Dots

Barik

Pradhan

2022

Application of Quantum Dots in Biology and Medicine

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Self-Assembly in Semiconductor Epitaxy

Cited by 8 publications

References 213 publications

Stranski–Krastanov mechanism of growth and the effect of misfit sign on quantum dots nucleation

Stranski–Krastanov mechanism of growth and the effect of misfit sign on quantum dots nucleation

Droplet epitaxy of semiconductor nanostructures for quantum photonic devices

All-Optical Detection of Biocompatible Quantum Dots

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