Abstract:This paper outlines a novel technique for using suspended photoresist above holes and trenches as planar bridge layer in the fabrication of through silicon vias ( T SVs) and beams. Photoresist film is formed through self-assembly on water surface and then transferred to a wafer as planar bridge layer to cover previously fabricated holes and trenches, which can be patterned with photolithography. The suspension capability of the photoresist bridge layer increases with the film thickness. 300 to 500 nm thick pho… Show more
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