Self-assembled SiGe quantum dots embedded in Ge matrix by Si ion implantation and subsequent annealing

Synthesis and Characterization of Si1−xGex (0 ≤ x < 1) Nanoparticles Using Inverse Micelle Surfactants

“…Figure showed three frequencies of the Si 1− x Ge x NPs at 339, 395, and 460 cm −1 . The reported GeGe, SiGe, and SiSi bonds of nanostructures were around 300, 400, and 500 cm −1 , respectively, which was red shift from the bands for bulk Si 1− x Ge x due to quantum confinement effect in NPs . The SiGe band at 395cm −1 was corresponded with the reported data.…”

“…The mean size of the Si 1− x Ge x NPs was 6.85±4.05 nm, as determined by measuring 100 randomly chosen NPs. Synthesized Si 1− x Ge x NPs showed similar average diameter with Bohr's exciton radius of Si 1− x Ge x alloy NPs, which is between 6 and 18 nm, to lead quantum confinement effect. An STEM image of the NPs was shown in Figure (c).…”

“…This work was expected to study the optical properties of freestanding type Si 1− x Ge x NPs, the NPs without any unwanted interference such as oxide‐embedded or substrates (Figure ) . In such structures, the substrates could change the emission wavelength of the NPs.…”

“…And the synthesized particle size distribution was very wide from 6 to 10 nm. Various emission luminescences were expected to be observed because Bohr's exciton radius of Si 1− x Ge x alloy is between 6 and 18 nm . However, the optical characteristics of synthesized Si 1− x Ge x NPs was observed at a wavelength maximum at 359 nm (λ exi = 270 nm), which is blue luminescence.…”

“…Si 1− x Ge x NPs have been prepared by many different methods, including radio frequency cosputtering, ion implantation with subsequent annealing, chemical vapor deposition, molecular beam epitaxy, and thermal disproportionation . Such fabrication techniques include a high‐temperature annealing step, where the NPs are deposited on an SiO 2 matrix and Si or Ge wafers.…”