Self-assembled photonic structure: a Ga optical antenna on GaP nanowires

Abstract

Semiconductor nanowires are the perfect platform for nanophotonic applications owing to their resonant, waveguiding optical properties and technological capabilities providing control over their crystalline and chemical composition. Vapor-liquid-solid growth mechanism...

Optical Nanoimaging of Surface Plasmon Polaritons Supported by Ultrathin Metal Films

“…The shift of FT peak from the actual mode is described by the following relationship: 52,53 n n cos( ) sin( ) eff obs…”

“…The shift of FT peak from the actual mode is described by the following relationship: , n eff = n obs − cos ( α ) nobreak0em0.25em⁡ sin ( β ) where n eff is the effective index of the guided plasmonic modes, n obs is the effective index of the modes observed in the experiment, α = 45° is the angle between the illumination wave vector and its projection onto the surface plane sample, and β is the angle between the projections of the wave vector and the edges of the crack in the Au film.…”

Hybrid Photonic Structures: Gallium Phosphide Nanowires Decorated with Carbon Dots for Enhanced Broadband Emission

“…[25] GaP NWs is the perfect platform for nanophotonics owing to the low optical losses for the wavelengths exceeding 500 nm. Previously we demonstrated NW-based optical waveguides operating in a visible range, [26] optically resonant emitters, [27] peculiar plasmonic, [28,29] and nonlinear [30] phenomena with selfassembled GaP NWs. Established growth protocols facilitate seamless integration into existing silicon-based technologies, offering a pathway for scalable and cost-effective fabrication processes.…”

Surface band bending caused by native oxides on solution-processed twinned InSb nanowires with p-type conductivity

“…Owing to the large surface area-to-volume ratio, tunable direct band gaps, fast charge transport and high absorption coefficient, most compositions of group III-V semiconductor NWs have been widely used in high-speed, low-energy electronic and optoelectronic devices, [1][2][3][4][5][6] including FETs, integrated circuits and infrared photodetectors. [7][8][9][10][11][12][13] In particular, InSb NWs are very promising for use in FET devices, which are pivotal to modern Si-based semiconductor technologies, due to their narrow band gap (∼0.17 eV), large absolute value of the g factor (∼51) and huge exciton Bohr radius (∼61 nm).…”