Self‐Assembled On‐Chip‐Integrated Giant Magneto‐Impedance Sensorics

Abstract

A novel method relying on strain engineering to realize arrays of on‐chip‐integrated giant magneto‐impedance (GMI) sensors equipped with pick‐up coils is put forth. The geometrical transformation of an initially planar layout into a tubular 3D architecture stabilizes favorable azimuthal magnetic domain patterns. This work creates a solid foundation for further development of CMOS compatible GMI sensorics for magnetoencephalography.

Three-dimensional nanomagnetism

“…Remarkably, their magnetic sensitivity, harnessing giant magnetoresistance or giant magnetoimpedance, is similar (or in some cases more than one order of magnitude larger76) to devices produced on Si wafers, even after demanding manipulations477. This is due to the continuity of the magnetization along their closed surface, that is, due to their topology78.…”

Biomimetic Microelectronics for Regenerative Neuronal Cuff Implants

“…Polymeric Layer Stack : Synthesis and preparation of the polymeric layer stack, [ 44,45 ] including adhesion and sacrifi cial layers as well as strained bilayers, is presented in the Supporting Information.…”

Shapeable magnetoelectronics

“…119,120 Due to their simple structure and high magnetic sensitivity, GMI sensors are promising candidates for flexible magnetic sensing applications. 72,193 Recently, a novel method relying on strain engineering to realize arrays of on-chip integrated GMI sensors equipped with pick-up coils. 193 The geometrical transformation of an initially planar layout into a tubular three-dimensional architecture with bending diameter of 50 lm only stabilizes favorable azimuthal magnetic domain patterns hence boosting the GMI effect 80 times offering remarkable sensitivity of 45 lV/Oe at excitation current of 1 mA.…”

“…72,193 Recently, a novel method relying on strain engineering to realize arrays of on-chip integrated GMI sensors equipped with pick-up coils. 193 The geometrical transformation of an initially planar layout into a tubular three-dimensional architecture with bending diameter of 50 lm only stabilizes favorable azimuthal magnetic domain patterns hence boosting the GMI effect 80 times offering remarkable sensitivity of 45 lV/Oe at excitation current of 1 mA. This work creates a solid foundation for further development of CMOS compatible GMI sensorics for magnetoencephalography.…”