2024
DOI: 10.1039/d4ta00333k
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Self-assembled metal-oxo clusters for sensitive and low-powered ultraviolet photodetectors

Manh Hoang Tran,
Thi My Huyen Nguyen,
Chung Wung Bark

Abstract: Large-area and low-trap zirconium-oxo cluster (ZOC) flakes were synthesized by polymerization of ZOC subunits and used as an efficient photoactive component in UV photodetectors.

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“…They possess tailorable structures at the atomic level. Recently, various controllable methods for preparing stable MOCs with diverse metal centers and outer organic ligands have been developed, laying the foundation for their functional regulation and application explorations. Thus, far, MOCs have gained interest in various areas, including catalysis, gas adsorption and separation, biomedicine, and nonlinear optics. , Recently, considerable efforts have been devoted to promoting the use of MOCs in advanced photolithography, e.g., extreme-ultraviolet lithography (EUVL; 13.5 nm), state-of-the-art techniques in the semiconductor industry to manufacture sub-5 nm node chips. The properties of MOCs, including small sizes, well-defined structures, high extreme-ultraviolet (EUV) absorption cross sections, and high reactivity under EUV irradiation, make them promising photoresists for EUVL. Accordingly, designing and tuning these properties and understanding their fundamental chemistry under EUV irradiation are essential to promote their applications.…”
Section: Introductionmentioning
confidence: 99%
“…They possess tailorable structures at the atomic level. Recently, various controllable methods for preparing stable MOCs with diverse metal centers and outer organic ligands have been developed, laying the foundation for their functional regulation and application explorations. Thus, far, MOCs have gained interest in various areas, including catalysis, gas adsorption and separation, biomedicine, and nonlinear optics. , Recently, considerable efforts have been devoted to promoting the use of MOCs in advanced photolithography, e.g., extreme-ultraviolet lithography (EUVL; 13.5 nm), state-of-the-art techniques in the semiconductor industry to manufacture sub-5 nm node chips. The properties of MOCs, including small sizes, well-defined structures, high extreme-ultraviolet (EUV) absorption cross sections, and high reactivity under EUV irradiation, make them promising photoresists for EUVL. Accordingly, designing and tuning these properties and understanding their fundamental chemistry under EUV irradiation are essential to promote their applications.…”
Section: Introductionmentioning
confidence: 99%