Self-assembled indium nanostructures formation on InSe (0001) surface

Galiy, P.V.; Nenchuk, T. M.; Ciszewski, A.; Mazur, Piotr; Buzhuk, Ya. M.; Tsvetkova, O.

doi:10.1007/s13204-020-01421-y

Cited by 8 publications

(6 citation statements)

References 28 publications

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“…The deposition rate was kept at approximately 0.07 ML/min. Such rates allowed organizing activation-migration movement of deposited In with localization at the growth activation centers under subsequent annealing during 3-5 min up to 475 K. Thus, scanning probe studies of the InTe (001) surface obtained by cleavage confirm the lack of surface reconstruction, that is well known in the case of other layered indium chalcogenides [11,12,14,15]. Finally, this makes it possible to conclude that InTe (001) crystal surface, especially that obtained by cleavage in situ, can act as a stable periodic template for the formation of nanostructures by the SSD method.…”

Section: Description Of Objects and Investigation Methodssupporting

confidence: 63%

“…2b (AFM) and Fig. 2d (STM) show a periodicity of ~ 8.45 Å in the surface lattice of InTe (001) consistent with XRD data for a tetragonal crystal structure of the TlSe type.Thus, scanning probe studies of the InTe (001) surface obtained by cleavage confirm the lack of surface reconstruction, that is well known in the case of other layered indium chalcogenides[11,12,14,15]. Finally, this makes it possible to conclude that InTe (001) crystal surface, especially that obtained by cleavage in situ, can act as a stable periodic template for the formation of nanostructures by the SSD method.…”

supporting

confidence: 76%

“…Since studies of the surface topology by scanning probe microscopy AFM/STM technique have shown that the surface of InTe crystal is not flat at the nanoscale, it is obvious that, as in the case of other layered indium chalcogenides [11,12], for its pattern we could expect appropriate results of the formation of ordered nanostructures due to the SSD method application. We observed the formation of nanosized 0D structures as a result of the SSD process arranged in an ordered manner.…”

Section: Stm Study Of Inte (001) Crystal Surface After Indium Deposition and Ssd Nanostructures Formationmentioning

confidence: 99%

“…Incidentally, SSD method has been extensively investigated in the past decades [8][9][10]. Previously, we reported on In/(100) In4Se3 [11] and In/InSe (0001) [12] nanosystems formation.…”

Section: Introductionmentioning

confidence: 99%

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Solid-state Dewetting Formation of In/InTe Nanosystem

Galiy¹,

Nenchuk²,

Ciszewski³

et al. 2021

J. Nano- Electron. Phys.

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Solid-state dewetting (SSD) method as a promising way to obtain nanostructures was applied for the formation of In/InTe nanosystem. The phase-elemental composition and structural perfection of the initial InTe surface were characterized by X-ray photoelectron spectroscopy, low energy electron diffraction (LEED) and atomic force microscopy (AFM). X-ray diffraction (XRD) studies revealed the InTe tetragonal crystal structure of the TlSe type (I4/mcm space group, lattice parameters a  8.4414(6) Å, c  7.1333(5) Å). Scanning tunneling microscopy (STM) studies of the initial InTe (001) surface and the same one used as an ordered template after thermal indium deposition showed that the shape and arrangement of indiuminduced nanostructures are powered by square surface lattice symmetry as derived from a tetragonal InTe bulk one. We observed the formation of nanosized 0D structures as a result of the SSD process due to surface heating above the indium melting point. The scanning tunnelling spectroscopy (STS) revealed correlation between indium coverage kinetics and an increase in the amount of density of states (DOS) at the surface within the band gap of InTe.

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Section: Description Of Objects and Investigation Methodssupporting

confidence: 63%

supporting

confidence: 76%

Section: Stm Study Of Inte (001) Crystal Surface After Indium Deposition and Ssd Nanostructures Formationmentioning

confidence: 99%

“…Incidentally, SSD method has been extensively investigated in the past decades [8][9][10]. Previously, we reported on In/(100) In4Se3 [11] and In/InSe (0001) [12] nanosystems formation.…”

Section: Introductionmentioning

confidence: 99%

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Solid-state Dewetting Formation of In/InTe Nanosystem

Galiy¹,

Nenchuk²,

Ciszewski³

et al. 2021

J. Nano- Electron. Phys.

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“…2D layered chalcogenide semiconductors, such as, InSe, In4Se3, InTe, Sb2Te3 are among newly emerging materials suitable for functional nanoscale devices applications [1]. It looks like that surface of 2D laye-red crystals are one among most perspective templates for selfassembling of metal nanostructures due to the solid state dewetting [2,3]. Because of intrinsic nature of van der Waals interlayer bonding, layered chalcogenide crystals' surfaces possess good ambient stability, might be just easily obtained by cleavage even in UHV, and, thus, applied as template for fabrication of metal-semiconductor hetero nanosystems.…”

Section: Introductionmentioning

confidence: 99%

TEMPLATE DIRECTED FORMATION OF METALLIC IN/(0001) SURFACE OF Sb2Te3 2D LAYERED SEMICONDUCTOR SELF-ASSEMBLING NANOSYSTEM

Galiy¹,

Nenchuk²,

Ciszewski³

et al. 2022

ELIT

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The cleavage surface of Sb2Te3 layered chalcogenide crystal like as other 2D layered ones, such as InSe, In4Se3, InTe, is provided as a nanoscale embossed template for the formation of arrays of self-assembled In nanostructures due to thermal deposition and subsequent solid state dewetting (SSD) procedure. Sb2Te3 samples were characterised by X-ray diffraction (XRD), Xray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED) and scanning tunneling microscopy/spectroscopy (STM/STS). Sb2Te3 has got the anisotropic crystal structure with the presence of van der Waals interlayer interactions. The studied (0001) surfaces were stable with a specific surface relief, which, as in the cases of other layered crystals In4Se3, InSe, InTe, is due to the crystal structure of the layer package. The shape of single In induced nanostructure and their array's symmetry are directed by the (0001) surface lattice symmetry. We observed the formation of triangular shaped In nanostructures ordered in hexagonal structured arrays with the well-defined lattice parameter after the SSD. That is, it can be argued that the cleavage (0001) surface of the Sb2Te3 crystal actually works as a spatially distributed ordered set of cells, which act as a guiding factor for the self-organization of nanostructures due to SSD process on the macroscale. The comparative fractal analysis of STM images of the (0001) Sb2Te3 and (0001) InSe surfaces, shows that distribution in size of In nanostructures are almost the same under commensurate experimental conditions. Sb2Te3 energy gap determined from STS spectra of initial surfaces is approaching value of 0.2 eV. An increase in the degree of In coverage is expressed in DOS distribution with appearance of its sufficient value in the range of Sb2Te3 energy gap.

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