“…This result agrees with the results reported over the last few years [9,10], which shows that GaN nanorods grow both axially and laterally with growth time.…”
“…This result agrees with the results reported over the last few years [9,10], which shows that GaN nanorods grow both axially and laterally with growth time.…”
“…Therefore, it is an ideal candidate for the realization of LEDs emitting from infrared to ultraviolet as well as high efficiency solar cells. The catalyst free molecular beam epitaxy ͑MBE͒ growth of GaN NWs on bare Si͑111͒ was investigated by several groups, [3][4][5][6][7][8][9] and the capability of fabricating III-nitride NW devices using single NWs ͑Refs. 10-12͒ and NW ensembles 13,14 has been proven.…”
Molecular beam epitaxy (MBE) on patterned Si/AlN/Si(111) substrates was used to obtain regular arrays of uniform-size GaN nanowires (NWs). The silicon top layer has been patterned with e-beam lithography, resulting in uniform arrays of holes with different diameters (dh) and periods (P). While the NW length is almost insensitive to the array parameters, the diameter increases significantly with dh and P till it saturates at P values higher than 800 nm. A diffusion induced model was used to explain the experimental results with an effective diffusion length of the adatoms on the Si, estimated to be about 400 nm.
“…By controlling the III/V ratio and growth time, nanorods, protruding from a columnar film base (compact region), were created. Detailed growth conditions have been reported elsewhere [5][6][7]. The formation of the nanorods was confirmed by using a high-resolution field emission scanning electron microscope (FESEM).…”
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