Self-assembled GaN hexagonal micropyramid and microdisk

Lo, Ikai; Hsieh, Chiung-Wen; Hsu, Yi‐Cheng; Pang, Wen-Yuan; Chou, M. C.

doi:10.1063/1.3079078

Cited by 24 publications

(31 citation statements)

References 22 publications

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“…It is noted that the thinness of the hexagonal microdisk structure leads to an angle of 73 o off the c-axis in Fig. 4(a), which is much greater than the angle of GaN microdisk, 5 obtained from the lateral over-growth along the (1100) direction for each unit step-layer by one d M -spacing,…”

Section: Analyses and Resultsmentioning

confidence: 99%

“…In our previous paper, we showed that the GaN (0001) microdisk with a tilted angle of 28 o was established with the capture of N atoms by the β-dangling bonds of the most-outside Ga atoms for each unit step-layer during the GaN lateral over-growth. 5 In the case of InN microdisk, when the growth temperature lowered to 470 o C, the c-plane InN (0001) hexagonal thin disk was built up with the capture of N atoms by the β-dangling bonds of the most-outside In atoms and then the lateral over-growth occurred; capture of In atoms by β-dangling bonds of N atoms, to form the thin microdisk. The lateral over-growth along the (1100) direction was extended to six d M -spacings for each unit step-layer (i.e., thin disk in Fig.…”

Section: Analyses and Resultsmentioning

confidence: 99%

“…[1][2][3][4][5] Wide direct band-gap gallium nitride (GaN) and aluminum nitride (AlN) compounds, with energy gaps covering the spectrum from blue to ultraviolet range, are the dominant materials for solid state lighting devices and well-studied to date. Because of the improvement of InN films grown by molecular-beam epitaxy (MBE), the direct band-gap indium nitride (InN) compound has been demonstrated with the value of 0.64 eV rather than 1.9 eV.…”

Section: Introductionmentioning

confidence: 99%

“…12 In our previous works, we have grown the high-quality self-assembling c-plane GaN (0001) hexagonal microdisk with a diameter of 4 µm on LiAlO 2 (LAO) substrates, which can be adjusted to optimize the quantum effect for nano-device applications. 5 Besides, we developed a back process to fabricate an electrical contact for the GaN hexagonal microdisk on a transparent p-type GaN template. 13 Therefore the InN microdisk provides an opportunity to fabricate the InGaN/GaN microdisk quantum well for the application of full-color micron LED without the sapphire substrate, which has a large lattice mismatch with InN and is mostly used for the bulk GaN-based quantum wells in commercial LEDs.…”

Section: Introductionmentioning

confidence: 99%

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Growth of InN hexagonal microdisks

Yang

et al. 2016

AIP Advances

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InN hexagonal thin wurtzite disks were grown on γ-LiAlO2 by plasma-assisted molecular-beam epitaxy at low temperature (470oC). The (0001¯) InN thin disk was established with the capture of N atoms by the β¯-dangling bonds of most-outside In atoms, and then the lateral over-growth of the In atoms were caught by the β¯-dangling bonds of the N atoms. From the analyses of high-resolution transmission electron microscopy, the lateral over-grown width was extended to three unit cells at [11¯00]InN direction for a unit step-layer, resulting in an oblique surface with 73o off c-axis.

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Section: Analyses and Resultsmentioning

confidence: 99%

Section: Analyses and Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Growth of InN hexagonal microdisks

Yang

et al. 2016

AIP Advances

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“…Besides, the thermal radiation will generate heat to degrade the performance and lifetime of the LED. In 2009, Ikai Lo et al developed a self-assembling nanotechnology to grow a three-dimensional (3D) hexagonal In x Ga 1-x N/GaN-microdisk from a nanometer-scaled nucleation on LiAlO 2 substrate for the application of white-light micro-LED without any assistance of phosphors [13,14]. The phosphor-free white-light micro-LEDs will benefit greatly by a high luminous efficiency and avoid the thermal aging by rare-earth doped phosphors.…”

Section: Nanotechnology and Fabrication Of Gan Crystalmentioning

confidence: 99%

Advances in GaN Crystals and Their Applications

2018

Crystals

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This special issue looks at the potential applications of GaN-based crystals in both fields of nano-electronics and optoelectronics. The contents will focus on the fabrication and characterization of GaN-based thin films and nanostructures. It consists of six papers, indicating the current developments in GaN-related technology for high-efficiency sustainable electronic and optoelectronic devices, which include the role of the AlN layer in high-quality AlGaN/GaN heterostructures for advanced high-mobility electronic applications and simulation of GaN-based nanorod high-efficiency light-emitting diodes for optoelectronic applications. From the results, one can learn the information and experience available in the advanced fabrication of nanostructured GaN-based crystals for nano-electronic and optoelectronic devices.Keywords: GaN; AlN; InN; AlGaN; InGaN; MOSFET; LED Applications of GaN-Based CompoundsReviewing the application of semiconductor compounds, it stemmed from the replacement of vacuum tube by transistors in electronics [1,2]. The first "point-contact transistor" was invented by J. Bardeen and W. H. Brattain with "three-electrode elements" utilizing semiconductor materials, p-type, and n-type germaniums [1]. As the germanium crystal was substituted by silicon crystal to make a p-n-p bipolar junction transistor [3] or metal-oxide-semiconductor field effect transistor (MOSFET) [4], the electronic property of transistor was tremendously enhanced and the silicon-based electronic industry was then established. However, the VI-elements (i.e., Ge, Si) are basically indirect band structure, which is not suitable for the application of photo-electronic devices. When the IV-elements (Si or Ge) are replaced by GaAs-based III-V compounds, the electron mobility of MOSFET can be significantly increased [5] and quantum effects (e.g., normal and fractional quantum Hall effects) can be clearly detected [6,7]. In addition to the high-speed transistor applications, the direct band structures of GaAs-based III-V compounds extended the semiconductor materials to photo-electronic applications, in which the IV-elements (Si or Ge) are exclusive due to the indirect band structure. In such a way, the GaAs-based heterostructures were successfully utilized in the information and communication technology [8]. Moreover, many opto-electronic devices were invented with GaAs-compounds such as light-emitting diodes (LED) and laser diodes (LD). In other words, GaAs-based III-V compounds can be designed to apply in both electronic and opto-electronic devices. However, the light-sources made of GaAs-based compounds (group III-arsenides) were limited to the emitting photon wavelength greater than 760 nm (red light) due to the bandgap energy (i.e., E g = 1.424 eV of GaAs). On the other hand, the direct bandgap energy of group III-nitrides can cover the range from 0.7 eV (InN), 3.4 eV (GaN), to 6.2 eV (AlN). Therefore, the III-nitrides can offer a simple material system, replacing III-arsenides to integrate both electronic and opto-e...

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The effect of lateral growth of self-assembled GaN microdisks on UV lasing action

Liu

Wang

et al. 2023

Nano Res.

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Self-assembled GaN hexagonal micropyramid and microdisk

Cited by 24 publications

References 22 publications

Growth of InN hexagonal microdisks

Growth of InN hexagonal microdisks

Advances in GaN Crystals and Their Applications

The effect of lateral growth of self-assembled GaN microdisks on UV lasing action

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