Self-assembled dual in-plane gate thin-film transistors gated by nanogranular SiO2 proton conductors for logic applications

Abstract

Phosphorus (P)-doped nanogranular SiO(2) films are deposited by plasma-enhanced chemical vapor deposition at room temperature, and a high proton conductivity of ~5.6 × 10(-4) S cm(-1) is measured at room temperature with a relative humidity of 70%. The accumulation of protons at the SiO(2)/indium-zinc-oxide (IZO) interface induces a large electric-double-layer (EDL) capacitance. Thin-film transistors (TFTs) with two in-plane gates are self-assembled on transparent conducting glass substrates. The large EDL capacitance can effectively modulate the IZO channel with a current ON/OFF ratio of >10(7). Such TFTs calculate dual input signals at the gate level coupled with a floating gate, analogous to that of neuron MOS (vMOS). AND logic is demonstrated on the neuron TFTs. Such neuron TFTs gated by P-doped nanogranular SiO(2) shows an effective electrostatic modulation on conductivities of oxide semiconductors, which is meaningful for portable chemical-biological sensing applications.

Protonic/electronic hybrid oxide transistor gated by chitosan and its full-swing low voltage inverter applications

“…Such a big capacitance is due to the protonic/electronic hybrid EDL effects. 25 Output characteristics (I ds vs V ds ) of the chitosan-gated protonic/electronic hybrid IZO EDL transistor are shown in Fig. 3 hysteresis loop of $0.1 V is observed between the forward and reverse V gs scan.…”

Artificial synapse network on inorganic proton conductor for neuromorphic systems

“…3d, a maximum specific capacitance of B3.0 mFcm À 2 is measured at 1.0 Hz, which is due to the electric-double-layer (EDL) formation at the SiO 2 electrolyte/IZO electrode interface. Proton conductivity of the nanogranular P-doped SiO 2 film was estimated to be B10 À 4 Scm À 1 at room temperature 24 . High proton conductivity is due to the sequence of proton hopping between hydroxyl groups and water molecules under applied electric field 24,26,27 .…”

“…Proton conductivity of the nanogranular P-doped SiO 2 film was estimated to be B10 À 4 Scm À 1 at room temperature 24 . High proton conductivity is due to the sequence of proton hopping between hydroxyl groups and water molecules under applied electric field 24,26,27 . Accumulation of protons at the interface of SiO 2 electrolyte/IZO electrode will result in a large EDL capacitance and a strong lateral electrostatic coupling, which is meaningful for building artificial synaptic network [28][29][30] .…”

“…In such structure, the gate bias is coupled to the semiconductor channel through the dielectric directly. Recently, oxide-based protonic/electronic hybrid transistors with in-plane-gate configuration were invented by our group [21][22][23][24] . As shown in Fig.…”

Electron mobility enhancement in solution-processed low-voltage In2O3 transistors via channel interface planarization

“…Previous reports assigned this to either, (i) the rotation of trapped solvent in the film 16 increasing the dielectric constant at lower frequencies, or (ii) the movement of hydrogen ions producing an electric-double-layer (EDL). 22 Although this increasing capacitance gives the AlO x film the highest capacitance at the low frequency range, it is also an indication of a relatively unstable dielectric with decreasing performance at high frequencies.…”