Self-Aligned Top-Gate Structure in High-Performance 2D p-FETs via van der Waals Integration and Contact Spacer Doping

Ngo, Tien Dat; Huynh, Tuyen; Moon, Inyong; Taniguchi, Takashi; Watanabe, Kenji; Choi, Min Sup; Yoo, Won Jong

doi:10.1021/acs.nanolett.3c04009

Cited by 5 publications

(1 citation statement)

References 35 publications

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“…However, the ion-implantation, a processing widely used in silicon technology for precise doping, is of little use in doping ultrathin 2D semiconductors of layered transition metal dichalcogenides (TMDs), which has triggered noticeable research efforts towards alternative mechanisms. So far, various approaches such as chemical doping, 13 plasma doping, 14 metal contact doping 15–17 and spacer doping 18–20 have been explored to achieve different doping for lateral/vertical p–n homojunctions based on mechanically exfoliated WSe 2 or CVD-grown species.…”

Section: Introductionmentioning

confidence: 99%

Lateral homojunctions of WSe₂ through contact surface engineering with SF₆ plasma etching

Li,

Wang,

Yang

et al. 2024

J. Mater. Chem. C

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Section: Introductionmentioning

confidence: 99%

Lateral homojunctions of WSe₂ through contact surface engineering with SF₆ plasma etching

Li,

Wang,

Yang

et al. 2024

J. Mater. Chem. C

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Edge‐Passivated Monolayer WSe₂ Nanoribbon Transistors

Chen,

Zhang,

King

et al. 2024

Advanced Materials

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The ongoing reduction in transistor sizes drives advancements in information technology. However, as transistors shrink to the nanometer scale, surface and edge states begin to constrain their performance. 2D semiconductors like transition metal dichalcogenides (TMDs) have dangling‐bond‐free surfaces, hence achieving minimal surface states. Nonetheless, edge state disorder still limits the performance of width‐scaled 2D transistors. This work demonstrates a facile edge passivation method to enhance the electrical properties of monolayer WSe2 nanoribbons, by combining scanning transmission electron microscopy, optical spectroscopy, and field‐effect transistor (FET) transport measurements. Monolayer WSe2 nanoribbons are passivated with amorphous WOxSey at the edges, which is achieved using nanolithography and a controlled remote O2 plasma process. The same nanoribbons, with and without edge passivation are sequentially fabricated and measured. The passivated‐edge nanoribbon FETs exhibit 10 ± 6 times higher field‐effect mobility than the open‐edge nanoribbon FETs, which are characterized with dangling bonds at the edges. WOxSey edge passivation minimizes edge disorder and enhances the material quality of WSe2 nanoribbons. Owing to its simplicity and effectiveness, oxidation‐based edge passivation could become a turnkey manufacturing solution for TMD nanoribbons in beyond‐silicon electronics and optoelectronics.

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Advances and Applications of Oxidized van der Waals Transition Metal Dichalcogenides

Kim,

Ngo,

Hassan

et al. 2024

Advanced Science

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The surface oxidation of 2D transition metal dichalcogenides (TMDs) has recently gained tremendous technological and fundamental interest owing to the multi‐functional properties that the surface oxidized layer opens up. In particular, when integrated into other 2D materials in the form of van der Waals heterostructures, oxidized TMDs enable designer properties, including novel electronic states, engineered light‐matter interactions, and exceptional‐point singularities, among many others. Here, the evolving landscapes of the state‐of‐the‐art surface engineering technologies that enable controlled oxidation of TMDs down to the monolayer‐by‐monolayer limit are reviewed. Next, the use of oxidized TMDs in van der Waals heterostructures for different electronic and photonic device platforms, materials growth processes, engineering concepts, and synthesizing new condensed matter phenomena is discussed. Finally, challenges and outlook for future impact of oxidized TMDs in driving rapid advancements across various application fronts is discussed.

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Self-Aligned Top-Gate Structure in High-Performance 2D p-FETs via van der Waals Integration and Contact Spacer Doping

Cited by 5 publications

References 35 publications

Lateral homojunctions of WSe₂ through contact surface engineering with SF₆ plasma etching

Lateral homojunctions of WSe₂ through contact surface engineering with SF₆ plasma etching

Edge‐Passivated Monolayer WSe₂ Nanoribbon Transistors

Advances and Applications of Oxidized van der Waals Transition Metal Dichalcogenides

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Self-Aligned Top-Gate Structure in High-Performance 2D p-FETs via van der Waals Integration and Contact Spacer Doping

Cited by 5 publications

References 35 publications

Lateral homojunctions of WSe2 through contact surface engineering with SF6 plasma etching

Lateral homojunctions of WSe2 through contact surface engineering with SF6 plasma etching

Edge‐Passivated Monolayer WSe2 Nanoribbon Transistors

Advances and Applications of Oxidized van der Waals Transition Metal Dichalcogenides

Contact Info

Product

Resources

About

Lateral homojunctions of WSe₂ through contact surface engineering with SF₆ plasma etching

Lateral homojunctions of WSe₂ through contact surface engineering with SF₆ plasma etching

Edge‐Passivated Monolayer WSe₂ Nanoribbon Transistors