Self-aligned planar technology for GaAs integrated circuits

Berth, M.; Cathelin, M.; Durand, G.

doi:10.1109/iedm.1977.189205

Cited by 7 publications

(1 citation statement)

References 2 publications

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“…Ion implantation has been used as an essential process in GaAs integrated circuits and microwave devices to produce electrically isolated layers [1]. Implant-isolation technology has a significant advantage over selective wet or dry etching of maintaining the planarity of the wafer surface.…”

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confidence: 99%

The effect of substrate temperature on the isolation of n-type GaAs layers using MeV boron implantation

Ahmed

Knights

Gwilliam

et al. 2001

Semicond. Sci. Technol.

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The evolution of sheet resistivity (R s ) with annealing temperature in n-type GaAs layers irradiated with 11 B + at different target temperatures has been investigated. The n-type material was prepared using multi-energy implants of 29 Si + ions. An isolation region was formed using boron ions at single energy of 1.5 MeV with doses of 2 × 10 14 cm −2 into samples held at RT, 100 and 200 • C. Sample resistivity was measured at room temperature both before and after annealing in the temperature range 350-800 • C. Maximum resistivity values were achieved after annealing at 500 • C for all three sets of samples. Annealing at higher temperatures returned the resistivity to a value close to that of the starting material and this recovery of conductivity was fastest in case of RT implants. Formation of thermally stable defects at high target temperatures was thought to be responsible for the different evolution trend of sheet resistivity with annealing temperature in samples irradiated at 100 and 200 • C compared to those irradiated at RT.

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confidence: 99%