Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI

Morimoto, T.; Ohguro, T.; Momose, H.S.; Iinuma, T.; Kunishima, I.; Suguro, K.; Katakabe, I.; Nakajima, H.; Tsuchiaki, Masakatsu; Ono, Mizuki; Katsumata, Y.; Iwai, Hiroshi

doi:10.1109/16.381988

Cited by 279 publications

(157 citation statements)

References 11 publications

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“…Ni has been widely used in the main-stream CMOS technology as a source/drain contact material. 23 The motivation to replace the bottom metal electrode with a highly doped n þ -type Si (N D $ 10 19 cm…”

Section: Introductionmentioning

confidence: 99%

Intrinsic nanofilamentation in resistive switching

Cha

Bosman

et al. 2013

Journal of Applied Physics

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Resistive switching materials are promising candidates for nonvolatile data storage and reconfiguration of electronic applications. Intensive studies have been carried out on sandwiched metal-insulator-metal structures to achieve high density on-chip circuitry and non-volatile memory storage. Here, we provide insight into the mechanisms that govern highly reproducible controlled resistive switching via a nanofilament by using an asymmetric metal-insulator-semiconductor structure. In-situ transmission electron microscopy is used to study in real-time the physical structure and analyze the chemical composition of the nanofilament dynamically during resistive switching. Electrical stressing using an external voltage was applied by a tungsten tip to the nanosized devices having hafnium oxide (HfO2) as the insulator layer. The formation and rupture of the nanofilaments result in up to three orders of magnitude change in the current flowing through the dielectric during the switching event. Oxygen vacancies and metal atoms from the anode constitute the chemistry of the nanofilament.

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Section: Introductionmentioning

confidence: 99%

Intrinsic nanofilamentation in resistive switching

Cha

Bosman

et al. 2013

Journal of Applied Physics

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“…1,2 Among various metal silicides, nickel monosilicide (NiSi) has been considered as a most promising silicide material for the fabrication of several tens of nanometer MOSFETs because of its advantages, such as low resistivity, less consumption of Si, and a low temperature process. 3,4 For example, Kittl and coworkers, investigating Niand Co-based silicides for advanced complementary metal-oxide-semiconductor (CMOS) technologies, showed that Ni silicide has good scaling behavior with lower diode leakage and lower contact resistance compared with Co silicide. 5 However, Ni silicide suffers from thermal instability, namely, the agglomeration of silicide films occurs during low temperature annealing.…”

Section: Introductionmentioning

confidence: 99%

Formation of thermally stable Ni monosilicide using an inductively coupled plasma process

Choi

Maeng

et al. 2004

Journal of Elec Materi

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The effect of argon plasma treatment on the structural and electrical properties of Ni silicides has been investigated. Electron-beam-evaporated Ni films on Si substrates are Ar plasma-treated by an inductively coupled plasma (ICP) reactor. For silicidation reactions, all the samples with and without the Ar plasma treatment are rapid-thermal annealed (RTA) at temperatures of 500-750°C in a nitrogen ambient. It is shown that the Ar plasma-treated samples produce better electrical and structural properties across the whole temperature range as compared with the untreated samples. It is further shown that the Ar plasma-treated samples contain nitrogen, which plays an important role in improving the morphological stability and the electrical properties of the silicide films.

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“…However, ultra-shallow S/D junction increases the sheet resistance (R sh ), which can degrade device performance [4]. To solve this problem, silicides have been used to reduce R sh in the S/D regions [5,6]. Nickel silicide (NiSi) is one of the candidates, which has recently gained great attention.…”

Section: Introductionmentioning

confidence: 99%

A Study of the Dependence of Effective Schottky Barrier Height in Ni Silicide/n-Si on the Thickness of the Antimony Interlayer for High Performance n-channel MOSFETs

Lee¹,

Li²,

Oh³

et al. 2015

JSTS:Journal of Semiconductor Technology and Science

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Abstract-In this paper, the effective electron Schottky barrier height (Ф Bn ) of the Ni silicide/nsilicon (100) interface was studied in accordance with different thicknesses of the antimony (Sb) interlayer for high performance n-channel MOSFETs. The Sb interlayers, varying its thickness from 2 nm to 10 nm, were deposited by radio frequency (RF) sputtering on lightly doped n-type Si (100), followed by the in situ deposition of Ni/TiN (15/10 nm). It is found that the sample with a thicker Sb interlayer shows stronger ohmic characteristics than the control sample without the Sb interlayer. These results show that the effective Ф Bn is considerably lowered by the influence of the Sb interlayer. However, the current level difference between Schottky diodes fabricated with Sb/Ni/TiN (8/15/10 nm) and Sb/Ni/TiN (10/15/10 nm) structures is almost same. Therefore, considering the process time and cost, it can be said that the optimal thickness of the Sb interlayer is 8 nm. The effective Ф Bn of 0.076 eV was achieved for the Schottky diode with Sb/Ni/TiN (8/15/10 nm) structure. Therefore, this technology is suitable for high performance n-channel MOSFETs.Index Terms-Nckel silicide, antimony interlayer, Schottky diode, effective Schottky barrier height, nchannel MOSFETs

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Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI

Cited by 279 publications

References 11 publications

Intrinsic nanofilamentation in resistive switching

Intrinsic nanofilamentation in resistive switching

Formation of thermally stable Ni monosilicide using an inductively coupled plasma process

A Study of the Dependence of Effective Schottky Barrier Height in Ni Silicide/n-Si on the Thickness of the Antimony Interlayer for High Performance n-channel MOSFETs

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