Self-aligned half-micrometer Silicon MASFET's with metallic amorphous Silicon gate

Sakaue, M.; Murase, Katsumi; Amemiya, Yoshihito

doi:10.1109/t-ed.1986.22605

Cited by 9 publications

(2 citation statements)

References 14 publications

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“…MetalAmorphous Silicon FETs [4,5], thin film Transistors [6], Optothyristors [7], and Heterojunction Phototransistors [8] there is no published work in the area of temperature sensors using amorphous semiconductors. Taking, also, into account that localized gap states have a crucial effect on the electrical properties of amorphous semiconductor materials [9,10] and devices [11] [12,13] The reverse current-voltage (1R-V) and voltage-temperature measurements (V-T) of a-SiC/c-Si(n) isotype heterojunctions were carried out within a light-tight cryostat evacuated down to 10 -3 Torr, in the temperature range from 230 K up to 320 K, using a picoameter and a current source controlled by a P.C.…”

Section: Introductionmentioning

confidence: 99%

The a‐SiC/c‐Si(n) Isotype Heterojunction as a High Sensitivity Temperature Sensor

Magafas

Georgoulas

Thanailakis

1997

Active and Passive Electronic Components

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The a-SiC/c-Si(n) isotype heterojunction has been studied as a temperature sensor by measuring its reverse current-voltage (IR-V) and reverse voltage-temperature (V-T) characteristics, as well as its reverse current temperature dependence. The IR-V characteristics exhibit an almost constant current, whereas the reverse current Ia depends strongly on T (from 230 K up to 320K). The V-T characteristics, at different reverse currents, reveal a highly temperature sensitive behavior for the a-SiC/c-Si(n) junction. The measured values of temperature sensitivity (A V/AT) was found to be (--2.5 V/K) in the moderate temperature range, which are much higher than those obtained with bulk semiconductor temperature sensors. The high sensitivity-temperature-range of the a-SiC/c-Si(n) heterojunctions can be controlled electrically within the regim of values from 230 K up to 320 K. Finally, the high sensitivity of these devices, in conjunction with the fact that a-SiC films can be used as an add-on to the existing Si technology, emerge new possibilities to the fabrication of high sensitivity temperature microsensors.

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Section: Introductionmentioning

confidence: 99%

The a‐SiC/c‐Si(n) Isotype Heterojunction as a High Sensitivity Temperature Sensor

Magafas

Georgoulas

Thanailakis

1997

Active and Passive Electronic Components

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“…Heterojunctions between c-Si substrates and a-Si and its alloys have found applications in devices such as heterojunction bipolar transistors (HBT) [1][2][3][4][5] and metal-amorphous silicon FET's (MASFET) [6]. Novel device applications of the above heterojunctions are in the threshold switches, which use a multilayer structure of hydrogenated amorphous silicon thin films [7,8,9], and also in the memory switches using non-hydrogenated a-Si films [10].…”

Section: Introductionmentioning

confidence: 99%

New High‐Speed a‐Si/c‐Si‐ and a‐SiC/c‐Si‐Based Switches

Dimitriadis

Girginoudi

Georgoulas

et al. 1995

Active and Passive Electronic Components

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The electrical and optical characteristics of the new high-speed Al/a-Si/c-Si(p)/c-Si(n/)/A1 and Al/aSiC/c-Si(p)/c-Si(n /)/AI optically controlled switches are presented in this paper. These switches exhibit the lowest ever reported values of rise and fall times, for this kind of switches, of about 3ns. They also exhibit a temperature and light reversibly controlled forward breakover voltage (VaF), together with high values of light triggering sensitivity.

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Heterostructure Field-Effect Transistors

Požela

1993

Physics of High-Speed Transistors

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Self-aligned half-micrometer Silicon MASFET's with metallic amorphous Silicon gate

Cited by 9 publications

References 14 publications

The a‐SiC/c‐Si(n) Isotype Heterojunction as a High Sensitivity Temperature Sensor

The a‐SiC/c‐Si(n) Isotype Heterojunction as a High Sensitivity Temperature Sensor

New High‐Speed a‐Si/c‐Si‐ and a‐SiC/c‐Si‐Based Switches

Heterostructure Field-Effect Transistors

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