Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays

Bergamaschini, Roberto; Isa, Fabio; Falub, C.V.; Niedermann, Philippe; Müller, E.; Isella, Giovanni; Känel, H. von; Miglio, Leo

doi:10.1016/j.surfrep.2013.10.002

Cited by 47 publications

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References 78 publications

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“…The growth technique has been tested with different material combinations and substrate orientations . The quasi‐continuous Ge epilayers studied in this paper have a large application potential as X‐ray absorbers monolithically integrated onto CMOS readout circuits or as virtual substrates for the epitaxial growth of other semiconductor materials with similar lattice parameters, such as GaAs ().…”

Section: Introductionmentioning

confidence: 99%

Strain relaxation in Ge microcrystals studied by high‐resolution X‐ray diffraction

Rozbořil

Meduňa

Falub

et al. 2015

Physica Status Solidi (a)

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Deposition on patterned substrates is a promising method for obtaining high quality, strain and defect free heteroepitaxial layers. In this paper we investigate the crystalline structure of quasi-continuous Ge layers consisting of closely spaced microcrystals on a Si substrate patterned in the form of a regular net of lithographically defined squared based pillars. Lattice parameters, strain and degree of relaxation of the Ge microcrystals are measured by standard high-resolution X-ray diffraction using reciprocal space mapping. In particular, we focus on the impact of Si pillar size and spacing on the Ge crystal quality by analyzing how the bending of crystal lattice planes caused by thermal stress relaxation and random crystal tilts affect the width of the diffraction peaks.

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Section: Introductionmentioning

confidence: 99%

Strain relaxation in Ge microcrystals studied by high‐resolution X‐ray diffraction

Rozbořil

Meduňa

Falub

et al. 2015

Physica Status Solidi (a)

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“…Further details about substrate patterning and preparation are reported in ref. . First, a 2 μm thick Si buffer is deposited at 740 °C and then the Ge content x is increased in steps of 0.5% at an average rate of 1.5% μm −1 up to the final value of x = 40%.…”

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confidence: 99%

“…The growth rate varies slightly with composition between 5.9 nm s −1 for x = 0 and 6.2 nm s −1 for x = 0.4. These growth conditions ensure to maintain vertical growth of isolated SiGe crystals and a surface roughness below 3 nm …”

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confidence: 99%

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Highly Mismatched, Dislocation‐Free SiGe/Si Heterostructures

et al. 2015

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“…[14][15][16] Even vertical dislocations perpendicular to the substrate surface are expelled from finite-sized crystals by interacting with slanting facets. 17,18 The recently reported method of three-dimensional (3D) heteroepitaxy, providing space filling arrays of tall, relaxed Ge crystals on patterned Si(001) substrates, may emerge as a promising solution also for the integration of GaAs on Si. 19 Using these Ge crystal arrays as seeds for GaAs would be advantageous, since GaAs and Ge are almost perfectly lattice matched.…”

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Strain relaxation of GaAs/Ge crystals on patterned Si substrates

Taboada

Kreiliger

Falub

et al. 2014

Applied Physics Letters

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We report on the mask-less integration of GaAs crystals several microns in size on patterned Si substrates by metal organic vapor phase epitaxy. The lattice parameter mismatch is bridged by first growing 2-μm-tall intermediate Ge mesas on 8-μm-tall Si pillars by low-energy plasma enhanced chemical vapor deposition. We investigate the morphological evolution of the GaAs crystals towards full pyramids exhibiting energetically stable {111} facets with decreasing Si pillar size. The release of the strain induced by the mismatch of thermal expansion coefficients in the GaAs crystals has been studied by X-ray diffraction and photoluminescence measurements. The strain release mechanism is discussed within the framework of linear elasticity theory by Finite Element Method simulations, based on realistic geometries extracted from scanning electron microscopy images.

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Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays

Cited by 47 publications

References 78 publications

Strain relaxation in Ge microcrystals studied by high‐resolution X‐ray diffraction

Strain relaxation in Ge microcrystals studied by high‐resolution X‐ray diffraction

Highly Mismatched, Dislocation‐Free SiGe/Si Heterostructures

Strain relaxation of GaAs/Ge crystals on patterned Si substrates

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