Self-aggregated Si quantum dots in amorphous Si-rich SiC

Strong optical nonlinearity of the nonstoichiometric silicon carbide

“…The binding energies of the decomposed peaks are 99.7, 100.5, 101.5, and 103.35 eV, which are attributed to Si-Si, Si-C, C-Si-O, and O-Si-O bonds, respectively. 46,47 As expected, the Si-Si-related spectral peak is substantially enhanced for nonstoichiometric Si This process results in residual oxygen in the chamber wall and cannot be entirely removed even after several runs of deposition.…”

“…Both the graphite-and diamond-like C-C-bond-related XPS peaks appear in nonstoichiometric Si x C 1Àx films grown at a 3 -orbital bonding. 47 At higher temperature, more C-C bonds transfer toward diamond-like sp 3 -orbital bonding. 54 In addition, Morimoto's group fabricated the C-rich Si 0.39 C 0.61 annealed from 600 1C to 1000 1C to observe the C-C bonds, 55 revealing that the graphite-like sp 3 -orbital C-C bonds always exist in the C-rich Si 0.39 C 0.61 ; however, the diamond-like sp 3 -orbital C-C bonds can hardly be observed.…”

Hydrogen-free PECVD growth of few-layer graphene on an ultra-thin nickel film at the threshold dissolution temperature

“…17 Nonetheless, hydrogen-free PECVD has already been applied to synthesize other elementary semiconductors such as amorphous silicon, nanocrystalline silicon and silicon carbide. [27][28][29][30][31] In contrast to previous work, we demonstrate the hydrogenfree synthesis of graphene by PECVD with an argon-diluted methane uence. The reductive synthesis of few-layer graphene is preliminarily performed on the sputtered ultra-thin nickel lm (50 nm or less) at an extremely low RF plasma power (equivalent to or below 100 W).…”

Semi-transparent silicon-rich silicon carbide photovoltaic solar cells

“…8,9 To overcome these drawbacks, nonstoichiometric Si x C 1Àx with a tunable optical bandgap has been investigated in recent years; its electrical properties can be modied by varying the composition ratio, enabling its application as an absorbing layer in PVSCs. 10,11 Through plasma enhanced chemical vapor deposition (PECVD), nonstoichiometric Si x C 1Àx has been synthesized by varying growth parameters such as substrate temperature; 12,13 this procedure is similar to the syntheses of nonstoichiometric SiO x and SiN x materials. 14,15 The tunable optical bandgap of nonstoichiometric Si x C 1Àx strongly depends on its C/Si composition, which further inuences the absorption spectra.…”