Selenopentathionic and Telluropentathionic Acids as Precursors for Formation of Semiconducting Layers on the Surface of Polyamide

Žalenkienė, Skirma; Sukyte, J.; Ivanauskas, Remigijus; Janickis, Vitalijus

doi:10.1155/2007/72497

Cited by 4 publications

(5 citation statements)

References 12 publications

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“…These precursors are more beneficial than conventional sources due to their higher stability. It was determined that, under our experimental conditions, the solution of monotelluropentathionic acid was more stable than the alkaline metal salt solution of a similar concentration [26] used in our previous experiment.…”

Section: Introductionmentioning

confidence: 74%

“…The selection of suitable precursors and their studies illustrate how chalcogens' compounds could be used in electroactive materials. The preparation of chalcogen layers using chalcopolythionic acids, such as monoselenopentathionic H 2 SeS 4 O 6 and monotelluropentathionic H 2 TeS 4 O 6 , has caught the attention of researchers [20,25,26]. These precursors are more beneficial than conventional sources due to their higher stability.…”

Section: Introductionmentioning

confidence: 99%

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Structural and Optical Characterizations of Cadmium Chalcogenide Layers on Polyamide Formed Using Monotelluropentathionic Acid

et al. 2022

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Mixed cadmium tellurides–cadmium sulfide thin layers were formed on the polyamide PA 6. Monotelluropentathionic acid (H2TeS4O6) was used as a precursor of tellurium and sulfur. A low-temperature, nontoxic, and cost-effective SILAR method was applied. Cadmium telluride (CdTe) and sulfide (CdS) layers were formed through the consecutive reactions of sorbed/diffused chalcogens species from telluropentathionate anion (TeS4O62−) with functional groups of polyamide and alkaline cadmium sulfate. The pseudo-second-order rate and Elovich kinetic models were the best fit to quantify an uptake of chalcogens and cadmium on PA 6. The effects of chalcogens and Cd on the structure and optical properties of PA 6 were characterized using UV-Vis and IR spectra. The clear changes of these properties depended on the concentration and exposure time in the precursor solutions. Fourier transform infrared spectroscopy and ultraviolet-visible spectroscopy were applied in order to evaluate the effect of the chalcogen species on the changes in structure of polyamide 6 films, depending on the exposure time in the solution of the chalcogens precursor and its concentration. The optical bandgap energy of the formed layers was found to be in the order of 1.52–2.36 eV. Studies by scanning electron microscopy and atomic force microscopy reveal that the diameter of the average grain is approximately 30 nm. The grains are conical in shape and unevenly distributed all over the surface of the substrate.

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Section: Introductionmentioning

confidence: 74%

Section: Introductionmentioning

confidence: 99%

Structural and Optical Characterizations of Cadmium Chalcogenide Layers on Polyamide Formed Using Monotelluropentathionic Acid

et al. 2022

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“…The nature of sulfur-containing particles sorbed by a PA film was studied by means of IR and UV absorption spectra of the polymer films treated in a potassium telluropentathionate [15] and the telluropentathionic acid [17] solutions. These investigations have confirmed that telluropentathionate anions sorb-diffuse into PA treated with the solutions of telluropentathionates.…”

Section: Resultsmentioning

confidence: 99%

Comparison of Telluropentathionates as Precursors for the Formation of Semiconductive Copper Chalcogenide Layers

Žalenkienė

Janickis

2012

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The processes of obtaining semiconductive and electrically conductive layers of mixed copper chalcogenides Cu_xS–Cu_yTe by the sorption-diffusion method on polyamide 6 using solutions of potassium and sodium telluropentathionates, K₂TeS₄O₆ and Na₂TeS₄O₆, and of telluropentathionic acid, H₂TeS₄O₆, as precursors of chalcogens (Te and S) are compared. The concentration of sorbed chalcogens increases with the increase of the duration of treatment and concentration of precursor solution in cases of all precursors used. Copper chalcogenide layers are formed on the surface of polyamide after the treatment of chalcogenized polymer with Cu(II/I) salt solution. The concentration of copper in the layer increases with the increase of initial chalcogenization duration. XRD spectra of PA films treated for different time with solutions of telluropentathionates and then with Cu(II/I) salt solution showed the maxima characteristic of the copper sulfide and copper telluride phases, tellurium sulfide TeS₇ and of elemental tellurium. Six copper sulfide phases, chalcocite, Cu₂S, djurleite, Cu_1.9375S, anilite, Cu_1.75S, digenite, Cu_1.80S, villamanite, CuS₂, covelite, CuS, three copper telluride phases Cu₄Te₃, Cu_1.85Te, rickardite, Cu₇Te₅, and tellurium sulfide TeS₇ were identified in the layers formed using (0.025–0.1) mol/dm³ solutions of potassium telluropentathionate. Three phases of copper tellurides, tetragonal Cu_3.18Te₂, hexagonal Cu₂Te and orthorhombic vulcanite, CuTe, were found in the films on PA surface formed using sodium telluropentathionate solutions, among them four phases of copper sulfides such as orthorhombic anilite, Cu₇S₄, monoclinic djurleite, Cu_1.9375S, geerite, Cu_1.6S, orthorhombic digenite, Cu_1.8S, and tellurium sulfide TeS₇; the Cu–Te–S layers formed using H₂TeS₄O₆ solution have binary phases such as chalcocite, Cu₂S, djurleite, Cu_1.9375S, anilite, Cu_1.75S, digenite, Cu_1.80S, copper telluride Cu_1.85Te, elemental tallurium and tellurium sulfide TeS₇. The phase composition of layers changes depending on the nature of telluropentathionate used for PA chalcogenization and conditions of treatment in precursor’ solutions. The value of electrical sheet resistance of chalcogenide layers formed using (0.05–0.1) mol/dm³ K₂TeS₄O₆ solutions varies from 256 kW...

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“…These precursors are more beneficial than conventional sources due to their higher stability. It was determined that under our experimental conditions, the solution of monotelluropentathionic acid was more stable than its alkaline metal salt solution of a similar concentration [26] that has been used in our previous experiment.…”

Section: Introductionmentioning

confidence: 86%

“…The selection of suitable precursors and their studies illustrate, how chalcogens' compounds could be used in the electroactive materials. The preparation of chalcogen layers using chalcopolythionic acids, such as monoselenopentathionic H2SeS4O6 and monotelluropentathionic H2TeS4O6, has caught the attention of researchers [20,25,26]. These precursors are more beneficial than conventional sources due to their higher stability.…”

Section: Introductionmentioning

confidence: 99%

Structural and Optical Characterizations of Cadmium Chalcogenide Layers on Polyamide Formed Using Monotelluropentathionic Acid

Ivanauskas¹,

Samardokas²,

Sukyte³

et al. 2022

Preprint

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Mixed cadmium tellurides – cadmium sulfides thin layers were formed on the polyamide PA 6. Monotelluropentathionic acid (H2TeS4O6) was used as precursor of tellurium and sulfur. We applied a low-temperature, nontoxic and cost-effective SILAR method. Cadmium telluride (CdTe) and sulfide (CdS) layers were formed through consecutive reactions of sorbed/diffused chalcogens species from telluropentathionate anion (TeS4O62–) with functional groups of polyamide and alkaline cadmium sulfate. The pseudo-second-order rate and Elovich kinetic models best fitted to quantify an uptake of chalcogens and cadmium on PA6. The effects of chalcogens and Cd on the structure and optical properties of PA6 were characterized using UV/Vis and IR spectra. The clear changes of these properties found in dependence on the concentration and exposure time in precursor's solutions. Fourier transform infrared spectroscopy and an ultraviolet-visible spectroscopy were applied in order to evaluate the effect of the chalcogens having particles on the changes in structure of polyamide 6 films depending on the exposure time in the solution of the chalcogens precursor and its concentration. The optical band gap energy of formed layers was found to be in the order of 1.52–2.36 eV. Studies of scanning electron microscopy and atomic force microscopy reveal that the diameter of the average grain is about 30 nm. The grains are conical in shape and unevenly distributed all over the surface of the substrate.

show abstract

Selenopentathionic and Telluropentathionic Acids as Precursors for Formation of Semiconducting Layers on the Surface of Polyamide

Cited by 4 publications

References 12 publications

Structural and Optical Characterizations of Cadmium Chalcogenide Layers on Polyamide Formed Using Monotelluropentathionic Acid

Structural and Optical Characterizations of Cadmium Chalcogenide Layers on Polyamide Formed Using Monotelluropentathionic Acid

Comparison of Telluropentathionates as Precursors for the Formation of Semiconductive Copper Chalcogenide Layers

Structural and Optical Characterizations of Cadmium Chalcogenide Layers on Polyamide Formed Using Monotelluropentathionic Acid

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