Selenization kinetics in Cu2ZnSn(S,Se)4 solar cells prepared from nanoparticle inks

Qu, Yongtao; Zoppi, Guillaume; Beattie, Neil

doi:10.1016/j.solmat.2015.12.016

Cited by 50 publications

(33 citation statements)

References 20 publications

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“…In order to produce ecient absorbing layers, CZTS precursor thin lms were then selenised to introduce grain growth, resulting in CZTSSe absorbers with lm thickness ∼ 1 µm. This process has been described in greater detail in our previous work (Qu et al, 2016b). The crystal structure of both types of lm is kesterite in nature determined from X-ray diraction (XRD).…”

Section: Methodsmentioning

confidence: 99%

Direct evidence of causality between chemical purity and band-edge potential fluctuations in nanoparticle ink-based Cu₂ZnSn(S,Se)₄ solar cells

Campbell¹,

Qu²,

Major³

et al. 2019

J. Phys. D: Appl. Phys.

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Section: Methodsmentioning

confidence: 99%

Direct evidence of causality between chemical purity and band-edge potential fluctuations in nanoparticle ink-based Cu₂ZnSn(S,Se)₄ solar cells

Campbell¹,

Qu²,

Major³

et al. 2019

J. Phys. D: Appl. Phys.

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“…The resulting nanoparticle inks were then deposited on molybdenum substrates via spin coating to form the CZTS precursor thin film with a thickness of ∼1 µm. Thereupon, CZTS precursor thin films were annealed in a selenium atmosphere to introduce grain growth, resulting in CZTSSe absorbers 33 41 and metallic ratios Zn/Sn: 1.02, Cu/(Zn+Sn): 0.85. Buffer layers of CdS (∼60 nm) and In 2 S 3 (∼70 nm) were prepared by chemical bath deposition (CBD).…”

Section: Methodsmentioning

confidence: 99%

Defect limitations in Cu2ZnSn(S, Se)4 solar cells utilizing an In2S3 buffer layer

Campbell

Gibbon

et al. 2020

Journal of Applied Physics

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Alternative n-type buffer layer such as In 2 S 3 have been proposed as Cd-free alternative in kesterite Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells. In this study, optical and electronic characterisation techniques together with device analysis and simulation were used to assess nanoparticle-based CZTSSe absorbers and solar cells with CdS and In 2 S 3 buffers. Photoluminescence spectroscopy indicated CZTSSe absorbers with In 2 S 3 buffer had a lower density of detrimental non-radiative defects and a higher concentration of copper vacancies V Cu + , responsible for p-type conductivity in CZTSSe, in comparison to the absorber with CdS buffer. Capacitance-voltage (C-V) measurements revealed the In 2 S 3 buffer-based CZTSSe devices had a three times higher apparent doping density and a consequently narrower space charge region than devices with a CdS layer. This resulted in poorer collection of photo-generated charge carriers in the near-IR region despite a more favourable band alignment as determined by X-ray photoelectron and inverse photoelectron spectroscopy. The presence of interfacial defect states in In 2 S 3 devices as determined by C-V and biased quantum efficiency measurements are also responsible for the loss in open-circuit voltage compared with reference devices with CdS.

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“…• C. This temperature was then held for 20 minutes before being cooled down rapidly (∼ 20 • C /min) as detailed elsewhere (Qu et al, 2016b GD-proler 2) using an Ar plasma with a crater size of 4 mm in diameter.…”

Section: Theorymentioning

confidence: 99%

Influence of OLA and FA ligands on the optical and electronic properties of Cu2ZnSn(S, Se)4 thin films and solar cells prepared from nanoparticle inks

Campbell

Bowen

et al. 2018

Solar Energy

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Selenization kinetics in Cu2ZnSn(S,Se)4 solar cells prepared from nanoparticle inks

Cited by 50 publications

References 20 publications

Direct evidence of causality between chemical purity and band-edge potential fluctuations in nanoparticle ink-based Cu₂ZnSn(S,Se)₄ solar cells

Direct evidence of causality between chemical purity and band-edge potential fluctuations in nanoparticle ink-based Cu₂ZnSn(S,Se)₄ solar cells

Defect limitations in Cu2ZnSn(S, Se)4 solar cells utilizing an In2S3 buffer layer

Influence of OLA and FA ligands on the optical and electronic properties of Cu2ZnSn(S, Se)4 thin films and solar cells prepared from nanoparticle inks

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Selenization kinetics in Cu2ZnSn(S,Se)4 solar cells prepared from nanoparticle inks

Cited by 50 publications

References 20 publications

Direct evidence of causality between chemical purity and band-edge potential fluctuations in nanoparticle ink-based Cu2ZnSn(S,Se)4 solar cells

Direct evidence of causality between chemical purity and band-edge potential fluctuations in nanoparticle ink-based Cu2ZnSn(S,Se)4 solar cells

Defect limitations in Cu2ZnSn(S, Se)4 solar cells utilizing an In2S3 buffer layer

Influence of OLA and FA ligands on the optical and electronic properties of Cu2ZnSn(S, Se)4 thin films and solar cells prepared from nanoparticle inks

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Product

Resources

About

Direct evidence of causality between chemical purity and band-edge potential fluctuations in nanoparticle ink-based Cu₂ZnSn(S,Se)₄ solar cells

Direct evidence of causality between chemical purity and band-edge potential fluctuations in nanoparticle ink-based Cu₂ZnSn(S,Se)₄ solar cells