Selenium precipitation in ZnSe crystals grown by physical vapor transport

Chen, Kuo-Tong; George, M. A.; Zhang, Y.; Bürger, A.; Su, Ching‐Hua; Sha, Yi‐Gao; Gillies, Donald C.; Lehoczky, S. L.

doi:10.1016/0022-0248(94)00733-0

Cited by 11 publications

(5 citation statements)

References 10 publications

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“…Without capability of identifying the chemical content of such small particles, it is uncertain whether these particles are Te precipitates or not. Similar particles were observed on cleaved ZnSe surface and were indirectly proved to be Se precipitates [16]. Hall measurements were performed on a CdTe-2 wafer from room temperature to 78K with a field strength of 10KGauss.…”

Section: Resultssupporting

confidence: 57%

Crystal Growth of CdTe by Gradient Freeze in Universal Multizone Crystallizator (UMC)

Lehoczky

et al. 2006

MSF

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In this study, crystals of CdTe were grown from melts, which have undergone different thermal history, by the unseeded gradient freeze method using the Universal Multizone Crystallizator (UMC). The effects of melt conditions on the quality of grown crystal were studied by various characterization techniques, including Synchrotron White Beam X-ray Topography (SWBXT), atomic force microscopy (AFM), electrical conductivity and Hall measurements.

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Section: Resultssupporting

confidence: 57%

Crystal Growth of CdTe by Gradient Freeze in Universal Multizone Crystallizator (UMC)

Lehoczky

et al. 2006

MSF

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“…Therefore, we employed vapor transport to grow single crystals, as this method is also performs self-purification during transport . It has been employed in growing compounds with high melting points, semiconductors that are inclined to dissociate at their melting temperatures, and those suffering from phase-transitions during cooling, such as ZnSe, ZnS, and α-HgI 2 , III nitrides (GaN), oxides (ZnO), and so forth. ,− In general, the temperature for vapor transport takes place at lower temperature than the melting point, thus reducing possible contamination from the crucible. The solid–vapor interfaces exhibit higher interfacial morphological stability during growth than do solid–liquid interfaces, which suppresses the formation of secondary phases during growth and leads to better quality of the crystals.…”

Section: Resultsmentioning

confidence: 99%

Defect Antiperovskite Compounds Hg₃Q₂I₂ (Q = S, Se, and Te) for Room-Temperature Hard Radiation Detection

Kontsevoi

Stoumpos

et al. 2017

J. Am. Chem. Soc.

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The high Z chalcohalides HgQI (Q = S, Se, and Te) can be regarded as of antiperovskite structure with ordered vacancies and are demonstrated to be very promising candidates for X- and γ-ray semiconductor detectors. Depending on Q, the ordering of the Hg vacancies in these defect antiperovskites varies and yields a rich family of distinct crystal structures ranging from zero-dimensional to three-dimensional, with a dramatic effect on the properties of each compound. All three HgQI compounds show very suitable optical, electrical, and good mechanical properties required for radiation detection at room temperature. These compounds possess a high density (>7 g/cm) and wide bandgaps (>1.9 eV), showing great stopping power for hard radiation and high intrinsic electrical resistivity, over 10 Ω cm. Large single crystals are grown using the vapor transport method, and each material shows excellent photo sensitivity under energetic photons. Detectors made from thin HgQI crystals show reasonable response under a series of radiation sources, including Am andCo radiation. The dimensionality of Hg-Q motifs (in terms of ordering patterns of Hg vacancies) has a strong influence on the conduction band structure, which gives the quasi one-dimensional HgSeI a more prominently dispersive conduction band structure and leads to a low electron effective mass (0.20 m). For HgSeI detectors, spectroscopic resolution is achieved for both Am α particles (5.49 MeV) andAm γ-rays (59.5 keV), with full widths at half-maximum (FWHM, in percentage) of 19% and 50%, respectively. The carrier mobility-lifetime μτ product for HgQI detectors is achieved as 10-10 cm/V. The electron mobility for HgSeI is estimated as 104 ± 12 cm/(V·s). On the basis of these results, HgSeI is the most promising for room-temperature radiation detection.

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“…At position of the particles we detect a significantly enhanced EDX signal from Selenium atoms as compared to the GaSe crystal (see Supporting Information, figure S5), indicating that these nanoobjects are selenium clusters. The Se clusters are most probably formed during crystal growth [45]. Once they appear, they force the surrounding layers of GaSe to bend, which leads to islands with a smooth profile on top of the GaSe crystal as illustrated in figure 4(d).…”

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confidence: 99%

Single-photon emitters in GaSe

et al. 2017

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This is an author produced version of a paper subsequently published in 2D Mater. Tonndorf et al, Single-photon emitters in GaSe (2017) 4 021010, https://doi.org/10. 1088/2053-1583/aa525b eprints@whiterose.ac.uk https://eprints.whiterose.ac.uk/ Reuse Unless indicated otherwise, fulltext items are protected by copyright with all rights reserved. The copyright exception in section 29 of the Copyright, Designs and Patents Act 1988 allows the making of a single copy solely for the purpose of non-commercial research or private study within the limits of fair dealing. The publisher or other rights-holder may allow further reproduction and re-use of this version -refer to the White Rose Research Online record for this item. Where records identify the publisher as the copyright holder, users can verify any specific terms of use on the publisher's website. TakedownIf you consider content in White Rose Research Online to be in breach of UK law, please notify us by emailing eprints@whiterose.ac.uk including the URL of the record and the reason for the withdrawal request.

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Selenium precipitation in ZnSe crystals grown by physical vapor transport

Cited by 11 publications

References 10 publications

Crystal Growth of CdTe by Gradient Freeze in Universal Multizone Crystallizator (UMC)

Crystal Growth of CdTe by Gradient Freeze in Universal Multizone Crystallizator (UMC)

Defect Antiperovskite Compounds Hg₃Q₂I₂ (Q = S, Se, and Te) for Room-Temperature Hard Radiation Detection

Single-photon emitters in GaSe

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Selenium precipitation in ZnSe crystals grown by physical vapor transport

Cited by 11 publications

References 10 publications

Crystal Growth of CdTe by Gradient Freeze in Universal Multizone Crystallizator (UMC)

Crystal Growth of CdTe by Gradient Freeze in Universal Multizone Crystallizator (UMC)

Defect Antiperovskite Compounds Hg3Q2I2 (Q = S, Se, and Te) for Room-Temperature Hard Radiation Detection

Single-photon emitters in GaSe

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Defect Antiperovskite Compounds Hg₃Q₂I₂ (Q = S, Se, and Te) for Room-Temperature Hard Radiation Detection