Selenium electrochemistry

Saji, Viswanathan S.; Lee, Chi‐Woo

doi:10.1039/c3ra40678d

Cited by 76 publications

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References 157 publications

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“…Surprisingly, deposits containing only the Se element were obtained after the conclusion of the constant-potential electrolysis. Based on the literature, Se(−II) may react with Se(IV) or Zn(II) to form Se(0) 31,32,55,59 or ZnSe, 31,32,66 respectively. It is possible that in this electrodeposition bath, the electrochemically generated Se(−II) reacted with Se(IV) to form Se at a faster rate than with Zn(II) when Se(IV) and Zn(II) ions were simultaneously present in the solution.…”

Section: Resultsmentioning

confidence: 99%

“…Surprisingly, ZnSe has never been prepared via electrodeposition from ILs even though the electrodeposition of Se in various ILs has been widely studied. [54][55][56][57][58][59][60][61] Many of these reports indicate that the deposition potential and temperature significantly affect the crystallinity of the Se deposits. In general, high temperature is advantageous to the formation of crystalline Se.…”

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Voltammetric Study of Selenium and Two-Stage Electrodeposition of Photoelectrochemically Active Zinc Selenide Semiconductor Films in Ionic Liquid Zinc Chloride-1-Ethyl-3-Methylimidazolium Chloride

Pai

Hsieh

et al. 2015

J. Electrochem. Soc.

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Ionic liquid zinc chloride-1-ethyl-3-methylimidazolium chloride (IL ZnCl 2 -EMICl) with a ZnCl 2 /EMICl ratio of 40/60 mol% was used as the electrolyte to study the voltammetric behavior of Se(IV) introduced into the IL as selenium chloride (SeCl 4 ) or selenium oxide (SeO 2 ). The electrodeposition of ZnSe was performed using constant-potential electrolysis at tungsten electrodes via a two-stage approach from the IL with and without SeO 2 . The nucleation mechanism of Se at the tungsten electrodes agrees better with the three-dimensional instantaneous nucleation than the progressive nucleation based on Sharifker's model. Crystalline Se and approximately stoichiometric crystalline ZnSe electrodeposits could be obtained from this system. The ZnSe films showed photoelectrochemical activity with a bandgap energy of ∼2.5 eV. According to the experiments of the dependence of the photocurrent on the applied potential, the ZnSe film was determined to be a p-type semiconductor with the flatband potential V FB of −0. Zinc selenide (ZnSe) is a II-VI semiconductor that belongs to the chalcogenide family. ZnSe is usually obtained as a n-type semiconductor with a wide bandgap (2.67-2.7 eV). p-type ZnSe, which is very likely due to excess Se in the deposits, has been prepared using electrodeposition.1 ZnSe has been reported to be a useful material for various optoelectronic devices, such as lightemitting devices, window layers for solar cells, photovoltaic cells, laser screens, film transistors, photoelectrochemical cells, and optical components for infrared lasers. 19,25 Compared with these approaches, electrodeposition is more attractive [26][27][28][29] in terms of convenience, cost, and suitability for the large-scale production of thin films. Moreover, the surface morphology, composition, and properties of semiconductors can be flexibly controlled by adjusting the operating parameters such as electrodeposition potential or current, potential waveforms (constant potential or pulse potential), concentration of precursors, temperature, and additives. Therefore, ZnSe has been widely prepared using electrodeposition, with mostly successful results. Most electrodepositions of ZnSe were carried out cathodically in acidic aqueous baths containing Zn(II) and SeO 2 . [30][31][32][33][34][35][36][37] In acidic solutions, SeO 2 dissolves to form H 2 SeO 3 . ZnSe has also been electrodeposited from alkaline aqueous baths. [38][39][40] In alkaline solutions, Zn(II) and SeSO 3 2− are most frequently used as the precursors, and complexing agents, such as EDTA, are usually needed for forming strong complex ions with Zn 2+ to prevent the chemical precipitation of ZnSe, which is produced from the reaction between Zn(II) and SeSO 3 2− . Few studies have electrodeposited ZnSe from nonaqueous baths such as dimethylsulfoxide [41][42][43] and molten salts (CaCl 2 -NaCl at 550• C). 44,45 In almost all recent studies and applications of ZnSe semiconductors, ZnSe has been prepared using electrodeposition from aqueous baths. [46][47][48] 28,29,[50]...

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Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

Voltammetric Study of Selenium and Two-Stage Electrodeposition of Photoelectrochemically Active Zinc Selenide Semiconductor Films in Ionic Liquid Zinc Chloride-1-Ethyl-3-Methylimidazolium Chloride

Pai

Hsieh

et al. 2015

J. Electrochem. Soc.

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“…Here we'll review studies on anodic and cathodic stripping voltammetries. This follows our previous reviews on electrochemistry of indium 44) and selenium 45) relevant to copper-indiumgalium-selenium solar cell materials.…”

Section: )mentioning

confidence: 99%

Electrochemistry of Gallium

Chung¹,

Lee²

2013

Journal of Electrochemical Science and Technology

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:Gallium is an important element in the production of a variety of compound semiconductors for optoelectronic devices. Gallium has a low melting point and is easily oxidized to give oxides of different compositions that depend on the conditions of solutions containing Ga. Gallium electrode reaction is highly irreversible in acidic media at the dropping mercury electrode. The passive film on a gallium surface is formed during anodic oxidation of gallium metal in alkaline media. Besides, some results in published reports have not been consistent and reproducible. An increase in the demand of intermetallic compounds and semiconductors containing gallium gives rise to studies on electrosynthesis of them and an increase of gallium concentration in the environment with various application of gallium causes the development of electroanalysis tools of Ga. It is required to understand the electrochemistry of Ga and to predict the electrochemical behavior of Ga to meet these needs. Any review papers related to the electrochemistry of gallium have not been published since 1978, when the review on the subject was published by Popova et al. In this study, the redox behavior, anodic oxidation, and electrodeposition of gallium, and trace determination of gallium by stripping voltammetries will be reviewed.

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“…Therefore, a lot of attention has been focused on its physical and chemical properties. Among others, the electrochemistry of selenium is being thoroughly investigated and the papers concerned with this topic increasingly appeared in the literature [4] (and references therein). This is a consequence of the fact that the electrochemistry gives many possibilities of producing selenium [5], recover it from wastes [6], analyze its concentration in solutions [7] and carrying out synthesis of various materials containing this element e. g. semiconductors, nanoparticles and quantum dots based on polychalcogenides [2,[8][9][10][11][12][13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

The Voltammetric Analysis of Selenium Electrodeposition from H2SeO3 Solution on Gold Electrode

Kowalik¹

2015

Archives of Metallurgy and Materials

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The different voltammetry techniques were applied to understand the process of selenium deposition from sulfate solution on gold polycrystalline electrode. By applying the cycling voltammetry with different scan limits as well as the chronoamperometry combined with the cathodic and anodic linear stripping voltammetry, the different stages of the deposition of selenium were revealed. It was found that the process of reduction of selenous acid on gold surface exhibits a multistage character. The cyclic voltammetry results showed four cathodic peaks which are related to the surface limited phenomena and which coincide with the bulk deposition process. The fifth cathodic peak is related to the reduction of bulk deposited Se 0 to Se −2 ions. Furthermore, the connection of anodic peaks with cathodic ones confirmed the surface limited process of selenium deposition, bulk deposition and reduction to Se −2 . Additionally, the cathodic linear stripping voltammetry confirms the process of H 2 SeO 3 adsorption on gold surface. The experiments confirmed that classical voltammetry technique proved to be a very powerful tool for analyzing the electrochemical processes related with interfacial phenomena and electrodeposition.Keywords: Selenium, selenous acid, electrodeposition, adsorption, cyclic voltammetry, goldZastosowano różne techniki woltamperometryczne w celu pełnego zrozumienia procesu osadzania selenu metodą elektrochemiczną na elektrodzie złotej. Wykorzystano w tym celu cykliczną woltamperometrię, a także chronoamperometrię połączona z katodową i anodową woltamperometrią inwersyjną. Wykazano, że proces osadzania selenu jest bardzo złożony i zachodzi w kilku etapach. Wyróżniono etap podpotencjałowego osadzania selenu, następnie zachodzi redukcja zaadsorbowanych cząsteczek kwasu selenowego(IV), po którym następuje nadpotencjałowe osadzanie selenu. W zakresie wysokich nadpotencjałów dochodzi do redukcji Se 0 do jonów Se 2 −.Powyższe eksperymenty potwierdziły wysoką przdatność technik woltamperometrycznych jako metody badawczej w celu analizy mechanizmu osadzania powłok metodą elektrochemiczną.

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Selenium electrochemistry

Cited by 76 publications

References 157 publications

Voltammetric Study of Selenium and Two-Stage Electrodeposition of Photoelectrochemically Active Zinc Selenide Semiconductor Films in Ionic Liquid Zinc Chloride-1-Ethyl-3-Methylimidazolium Chloride

Voltammetric Study of Selenium and Two-Stage Electrodeposition of Photoelectrochemically Active Zinc Selenide Semiconductor Films in Ionic Liquid Zinc Chloride-1-Ethyl-3-Methylimidazolium Chloride

Electrochemistry of Gallium

The Voltammetric Analysis of Selenium Electrodeposition from H2SeO3 Solution on Gold Electrode

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