We describe a reversible response matrix and the dynamic interplay, as a moderately acidic NO 2 analyte interacts at room temperature with a TiO 2 , SnO x , Cu x O (x = 1,2), and A x O (x 1) metal oxide nanostructure deposited n-type nanopore coated microporous porous silicon (PS) interface. A significant variable response matrix is measured and the dynamic nature of analyte-interface processes characterizing the semiconductor-analyte interaction as NO 2 couples to the decorated semiconductor majority charge carriers. The competition for electrons between NO 2 and the TiO 2 decorated PS interface leads to distinct variations in sensor response as a function of increased TiO 2 concentration and displays a time variance as the extraction of electrons by NO 2 reaches a limiting charge carrier depletion and the decorated PS surface becomes electron withdrawing. This dynamic reversal is also demonstrated by distinct time-dependent PS interface responses to NO 2 and NO where the degree of electron extraction reaches a maximum and is again countered by the depleted n-type PS. Electron depleted SnO x and Au x O treated PS interfaces display a significant remnant effect as the decorated surface can become electron withdrawing for extended periods, forming a stronger acid and extracting electrons from NO 2. Exposure to NH 3 also demonstrates the remnant effects of depletion.We have outlined 1 an approach to "nanostructure directed electron transduction vs. chemisorption" on a sensor/microreactor interface. The fractional deposition of nanostructured metal oxide islands is used to modify sensitive surface layers created utilizing a hybrid nanopore covered microporous matrix formed on "p-or n-type" silicon. The core of this approach is the Inverse Hard / Soft acid / base (Table I) interaction model (IHSAB). This model provides a general approach to optimally design sensors with improved and variable sensitivity and conversion efficiency for a variety of gases, in an array-based format, 5 by correlating the tenants of acid/base interaction and the properties of extrinsic semiconductors. [1][2][3][4] In the present study, we demonstrate not only the variable surface sensitivities that are introduced by the playoff between the untreated extrinsic semiconductor interface and the matrix of fractionally deposited nanostructured islands, but also the dynamic time-dependent response that exemplifies the manner in which these nanostructure decorated interfaces interact with the analyte NO 2 , striking at the heart of the competitive electron dynamics that characterizes these systems.The IHSAB principle correlates with a basis in directed electron transduction with minimized chemisorption,and is in complement to the HSAB principle for hard/soft acid/base interactions first put forth by Pearson et al. 6 and later correlated with density functional theory (DFT) 7,8 and Chemical Reaction Theory 9 by Pearson, Parr, 7,8 Cohen et al. 9 and others. 10 In contrast to the HSAB principle which outlines a means to form strong ionic or covalent b...