Selectivity between SiO2 and SiNx during Thermal Atomic Layer Etching Using Al(CH3)3/HF and Spontaneous Etching Using HF and Effect of HF + NH3 Codosing
Marcel Junige,
Steven M. George
Abstract:Selectivity was examined between SiO 2 and SiN x during thermal atomic layer etching (ALE) and spontaneous etching. Thermal ALE of SiO 2 and SiN x was explored using sequential trimethylaluminum (TMA) and hydrogen fluoride (HF) with reactant exposures of 3 Torr for 45 s at 275 °C. SiO 2 thermal ALE achieved an etch per cycle (EPC) of 0.20 Å/cycle and near-ideal synergy up to 95%. SiN x thermal ALE exhibited a higher EPC of 1.06 Å/cycle. The selectivity factor was ∼5:1 for SiN x etching compared to SiO 2 etchin… Show more
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