Selectively doped germanium THz laser

Dolguikh, M. V.; Muravjov, A. V.; Peale, Robert E.

doi:10.1117/12.542565

Cited by 7 publications

(3 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In contrast to p-Ge/Ge structures [7][8][9][10], the optimal average carrier concentration for the delta doped p-GaAs/GaAs structure is comparable to that for uniformly doped p-GaAs [4] and equal to ~ 2x10 14 -4x10 14 cm -3 . The optimal range of the structure period is 250 -500 nm for the chosen fields.…”

Section: Figure 11mentioning

confidence: 83%

“…GaAs (fields, average concentration, temperature) except the doping profile, so that the observed improvement is a purely effect of the selective doping. As will be shown below, an additional improvement of the gain by increase in the carrier concentration, as was observed for p-Ge/Ge structures [7][8][9][10], is not achievable for GaAs. Comparison of Figs.…”

Section: Calculations For Delta Doped Structurementioning

confidence: 90%

See 1 more Smart Citation

Terahertz Gain on Intersubband Transitions in Multilayer Delta-Doped p-GaAs Structures

Peale¹

2006

Self Cite

View full text Add to dashboard Cite

Section: Figure 11mentioning

confidence: 83%

Section: Calculations For Delta Doped Structurementioning

confidence: 90%

Terahertz Gain on Intersubband Transitions in Multilayer Delta-Doped p-GaAs Structures

Peale¹

2006

Self Cite

View full text Add to dashboard Cite

“…Our practical goal is development of a terahertz laser based on thin germanium films with small signal gain coefficient sufficient to operate at liquid nitrogen temperatures. An additional motivating factor for pursuing our approach, when THz quantum cascade lasers have already achieved this temperature milestone 4,5 , is the unique very wide gain spectrum (2)(3)(4) for the transitions between subbands of the valence band. This feature is potentially important for building a terahertz laser with wide tunability, which none of the other known terahertz semiconductor lasers possesses.…”

Section: Introductionmentioning

confidence: 99%

Amplification of terahertz radiation in delta-doped germanium thin films

et al. 2005

Self Cite

View full text Add to dashboard Cite

A new geometry for the intersubband THz laser on delta-doped multi-layer Ge thin films with in-plane transport of carriers in crossed electric and magnetic fields is proposed. A remarkable increase of the gain compared to existing bulk p-Ge lasers is based on spatial separation of light and heavy hole streams, which helps to eliminate scattering of light holes on ionized impurities and the majority of heavy holes. Inversion population and the gain have been studied using Monte-Carlo simulation. The terahertz transparency of a CVD-grown delta-doped Ge test structure has been experimentally studied by intracavity laser absorption spectroscopy using a bulk p-Ge laser. A practical goal of this study is development of a widely tunable (2-4 THz) laser based on intersubband hole transitions in thin germanium films with the gain sufficient to operate at liquid nitrogen temperatures.

show abstract

Terahertz gain on intersubband transitions in multilayer delta-doped p-Ge structures

Dolguikh

Muravjov

Peale

et al. 2005

Journal of Applied Physics

View full text Add to dashboard Cite

A far-infrared laser concept based on intersubband transitions of holes in p-type periodically delta-doped semiconductor films is studied using numerical Monte Carlo simulation of hot-hole dynamics. The considered device consists of monocrystalline pure Ge layers periodically interleaved with delta-doped layers and operates with vertical hole transport in the presence of an in-plane magnetic field. Population inversion on intersubband transitions arises due to light-hole accumulation in E Ќ B fields, as in the bulk p-Ge laser. However, the considered structure achieves spatial separation of hole accumulation regions from the doped layers, which reduces ionized-impurity and carrier-carrier scattering for the majority of light holes. This allows a remarkable increase of the gain in comparison with bulk p-Ge lasers. Population inversion and gain sufficient for laser operation are expected up to 77 K. Test structures grown by chemical-vapor deposition demonstrate feasibility of producing the device with sufficient active thickness to allow quasioptical electrodynamic cavity solutions.

show abstract

Selectively doped germanium THz laser

Cited by 7 publications

References 16 publications

Terahertz Gain on Intersubband Transitions in Multilayer Delta-Doped p-GaAs Structures

Terahertz Gain on Intersubband Transitions in Multilayer Delta-Doped p-GaAs Structures

Amplification of terahertz radiation in delta-doped germanium thin films

Terahertz gain on intersubband transitions in multilayer delta-doped p-Ge structures

Contact Info

Product

Resources

About