Selective patterning of out-of-plane piezoelectricity in MoTe2 via focused ion beam

Seol, Daehee; Kim, Songkil; Jang, Woo‐Sung; Jin, Yeongrok; Kang, Soo‐Jung; Kim, Sera; Won, Dongyeun; Lee, Chan‐Woo; Kim, Young Min; Lee, Jaekwang; Yang, Heejun; Jeong, Mun Seok; Belianinov, Alex; Tselev, Alexander; Somnath, Suhas; Smith, Christopher R.; Ovchinnikova, Olga S.; Balke, Nina; Kim, Yunseok

doi:10.1016/j.nanoen.2020.105451

Cited by 18 publications

(13 citation statements)

References 58 publications

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“…To this end, energy band characterizations have been further performed. (4.5 mV), [36] heterojunction construction (58 mV), [38] thickness engineering (25 mV) [39] as well as defect engineering (65-70 mV), [40,41] and it is comparable to that of phase engineering (103 mV) [42] and smaller than that of charge transfer doping (169 mV). [43] However, it is to be emphasized that phase engineering suffers from poor thermal and long-term stability due to the relatively small relaxation energy for the transition from metastable phase to thermodynamical phase.…”

Section: Resultsmentioning

confidence: 94%

Promoting the Performance of 2D Material Photodetectors by Dielectric Engineering

Deng

et al. 2021

Small Methods

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Taking advantages of the dangling-bondfree surface, excellent in-plane carrier mobility, pronounced quantum confinement effect, thickness/strain-sensitive physical properties, outstanding mechanical flexibility, and strong light-matter interactions, 2DMs have demonstrated enormous potential in the realm of photo detection. [2][3][4][5] For example, in 2016, Koppens et al. prepared an ultrafast photodetector based on a vertical graphene/ MoSe 2 /graphene sandwich structure. [6] Since the transport path of photocarriers is down to a few molecule layers, the transit time is extremely limited. As a result, the response time of the device with a MoSe 2 channel thickness of 2.2 nm is merely 5.5 ps. In 2020, Maiti et al. achieved the expansion of effective wavelength range of 2DM photodetectors by leveraging strain engineering. [7] The bandgap of 4%-strained 2D MoTe 2 markedly shrinks by ≈0.24 eV as compared to unstrained MoTe 2 (from 1.04 to 0.8 eV). As a result, the strained 2D MoTe 2 photodetector demonstrates distinct photoresponse to illumination of telecommunication wavelengths. Recently, by exploiting graphene as electrodes, connecting lines as well as photosensitive channels, Norris et al. have fabricated "all-graphene" photo detectors, which simultaneously enable light detection and high transparency. [8] Based on such functional units distributed along the optical path, a proof-of-concept single-pixel focal stack light field camera is successfully built and the key operating principle to perform optical ranging is demonstrated.In spite of remarkable progress, the atomic-scale thicknessinduced low light absorption and limited carrier lifetime have been two ever-present limiting factors hindering the effective accumulation of photocarriers and thus curtailing the further breakthrough of the performance of 2DM photodetectors. Various strategies have been developed to address these predicaments. On the one hand, a variety of optical micro-/nanostructures, including plasmonic antenna, [9] optical waveguide, [10] and optical cavity, [11] have been designed to enhance the light harvesting. However, noble metal micro-/nanostructures suffer from high material cost and limited resonant range, while the Low light absorption and limited carrier lifetime are two limiting factors hampering the further breakthrough of the performance of 2D materials (2DMs)-based photodetectors. This study proposes an ingenious dielectric engineering strategy toward boosting the photosensitivity. Periodic dielectric structures (PDSs), including SiO 2 /h-BN, SiO 2 /Al 2 O 3 , and SiO 2 /SrTiO 3 (STO), are exploited to couple with 2D photosensitive channels (denoted as PDS- 2DMs). The responsivity, external quantum efficiency, and detectivity of an optimized SiO 2 /STO (300 nm) -WSe 2 photodetector reach 89081 A W −1 , 2.7 × 10 7 %, and 1.8 × 10 13 Jones, respectively. These performance metrics are orders of magnitude higher than a pristine WSe 2 photodetector, enabling reliable sub-1 pW weak light detection. Based on systematic characterizatio...

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Section: Resultsmentioning

confidence: 94%

Promoting the Performance of 2D Material Photodetectors by Dielectric Engineering

Deng

et al. 2021

Small Methods

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“…The regions with He ion doses below 10 16 ions/cm 2 show a slight decrease in the effective d 33 . This decrease may be due to the defect formation by ion bombardment or the carbon contamination at the surface of the HZO thin film after ion bombardment (32)(33)(34). When the He ion dose is increased to 5 ×10 16 ions/cm 2 or more, the effective d 33 is substantially increased compared with that of the pristine region.…”

Section: Piezoresponse-dependent Light Ion Bombardmentmentioning

confidence: 99%

“…This reduction may result from the defect formation by ion bombardment. However, it may be also associated with carbon contamination at the surface because carbon deposition can be easily induced by the surface adsorbates of hydrocarbon molecules during ion bombardment ( 32 – 34 ) and, furthermore, the atomic force microscopy (AFM) measurements can be sensitive to carbon contamination. However, the regions with He ion doses above 10 16 ions/cm 2 show an increase in the R-PFM amplitude with an increase in the He ion dose.…”

Section: Piezoresponse-dependent Light Ion Bombardmentmentioning

confidence: 99%

Highly enhanced ferroelectricity in HfO ₂ -based ferroelectric thin film by light ion bombardment

Kang

Jang

Morozovska

et al. 2022

Science

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Continuous advancement in nonvolatile and morphotropic beyond-Moore electronic devices requires integration of ferroelectric and semiconductor materials. The emergence of hafnium oxide (HfO 2 )–based ferroelectrics that are compatible with atomic-layer deposition has opened interesting and promising avenues of research. However, the origins of ferroelectricity and pathways to controlling it in HfO 2 are still mysterious. We demonstrate that local helium (He) implantation can activate ferroelectricity in these materials. The possible competing mechanisms, including He ion–induced molar volume changes, vacancy redistribution, vacancy generation, and activation of vacancy mobility, are analyzed. These findings both reveal the origins of ferroelectricity in this system and open pathways for nanoengineered binary ferroelectrics.

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“…For example, pinning of ferroelectric domains in PbZr 0.2 Ti 0.8 O 3 thin films at doses of 0.22 × 10 15 to 1 × 10 15 ions/cm 2 has been demonstrated, and through site-selective direct-write patterning with variable dose, various nanostructures with novel ferroelectric-switching functionalities have been fabricated [ 33 ] ( Figure 2f ). Using similar doses, out-of-plane piezoelectricity has been patterned into multilayered MoTe 2 [ 56 ]. In the case of helium ion irradiation of a bulk van der Waals layered ferroelectric semiconductor crystal (CuInP 2 S 6 ), local volume expansion due to helium ion implantation was observed, forming a conical surface topography within which for increasing dose the ferroelectric domains were gradually destroyed [ 57 ].…”

Section: Reviewmentioning

confidence: 99%

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

Allen¹

2021

Beilstein J. Nanotechnol.

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The helium ion microscope has emerged as a multifaceted instrument enabling a broad range of applications beyond imaging in which the finely focused helium ion beam is used for a variety of defect engineering, ion implantation, and nanofabrication tasks. Operation of the ion source with neon has extended the reach of this technology even further. This paper reviews the materials modification research that has been enabled by the helium ion microscope since its commercialization in 2007, ranging from fundamental studies of beam–sample effects, to the prototyping of new devices with features in the sub-10 nm domain.

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Selective patterning of out-of-plane piezoelectricity in MoTe2 via focused ion beam

Cited by 18 publications

References 58 publications

Promoting the Performance of 2D Material Photodetectors by Dielectric Engineering

Promoting the Performance of 2D Material Photodetectors by Dielectric Engineering

Highly enhanced ferroelectricity in HfO ₂ -based ferroelectric thin film by light ion bombardment

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

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Selective patterning of out-of-plane piezoelectricity in MoTe2 via focused ion beam

Cited by 18 publications

References 58 publications

Promoting the Performance of 2D Material Photodetectors by Dielectric Engineering

Promoting the Performance of 2D Material Photodetectors by Dielectric Engineering

Highly enhanced ferroelectricity in HfO 2 -based ferroelectric thin film by light ion bombardment

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

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Product

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Highly enhanced ferroelectricity in HfO ₂ -based ferroelectric thin film by light ion bombardment