Selective laser spectroscopy of a highly dispersed Bi4Ge3O12 scintillator doped with Pr3+ ions

Alimov, O.K.; Doroshenko, Maxim E.; Егорышева, А. В.; Gajtko, O.M.; Krupkina, Anna; Shodiev, Hasan; Веселова, В. О.

doi:10.1016/j.optmat.2022.112330

Cited by 3 publications

(2 citation statements)

References 15 publications

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“…The decay time is roughly the same within an error range for both samples and is recorded equal to 6.1 and 6.3 μs for an s-s sample and a c-p sample, respectively. This confirms the origin of the transition at 645 nm as the transition from the 3 P 0 level, which decay time has been reported to be a few microseconds . To quantify the multiexponential decay curves, the mean decay times were calculated from eq where I is the luminescence intensity and t is the time.…”

Section: Results and Discussionsupporting

confidence: 63%

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Spectacular Enhancement of Pr³⁺ Emission in a Highly Symmetric Ba₂MgWO₆ Matrix

Miniajluk-Gaweł,

Bondzior,

Podgórny

et al. 2023

J. Phys. Chem. C

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Double perovskite materials have recently attracted a lot of attention from the scientific community studying luminescent materials for white light-emitting diodes (WLEDs), displays, and luminescence thermometry. A series of Pr3+-doped Ba2MgWO6 (BMW) powder samples were prepared by two different synthesis methods: coprecipitation (C–P) method and conventional high-temperature solid-state reaction method (S–S), as a material to improve the quality of white LED lighting, and their structural and spectroscopic properties are described in detail. We assumed that obtaining them by the conventional solid-state method would significantly improve their spectroscopic properties. The results are clear and prove that by replacing the coprecipitation method with the solid-state method, we can obtain a better material for WLED lighting. This is because when a W6+ ion replaces the Mg2+ site in the BMW structure, a defect is created resulting in an excess of quadruple positive charge of the W6+ ions at the Mg2+ position, expressed as (W Mg 6+)• in Kröger–Vink notation. The C–P method generates many more of these defects due to the larger active surface area of these samples compared to the S–S samples. We observed that a decrease in the number of defects (WMg 6+)•••• correlates with a weaker intervalence charge transfer (IVCT) band and, consequently, a stronger emission of Pr3+ ions in the BMW material synthesized by the solid-state method. The use of BMW:Pr3+ material has the potential to improve the quality of white light. According to simulations, the CRI parameter could be elevated from 85 to 95.

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Section: Results and Discussionsupporting

confidence: 63%

“…This confirms the origin of the transition at 645 nm as the transition from the 3 P 0 level, which decay time has been reported to be a few microseconds. 31 To quantify the multiexponential decay curves, the mean decay times were calculated from eq 3…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Spectacular Enhancement of Pr³⁺ Emission in a Highly Symmetric Ba₂MgWO₆ Matrix

Miniajluk-Gaweł,

Bondzior,

Podgórny

et al. 2023

J. Phys. Chem. C

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Reducing Luminescence Intensity and Suppressing Irradiation‐induced Darkening of Bi₄Ge₃O₁₂ by Ce‐doping for Radiation Detection

Tang,

Deng,

Liu

et al. 2023

Advanced Optical Materials

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Due to its short radiation length, moderate light output (8000‐9000 photons/MeV), high density (7.13 g cm−3), and non‐hygroscopicity, etc., Bi4Ge3O12 (BGO) material has been widely utilized as an advanced scintillator for irradiation detection. However, pure BGO cannot meet the requirements for future physics experiments and state‐of‐art industrial facilities coupled with a silicon photomultiplier (SiPM) due to its slow response time, poor radiation resistance, and excessive light output. Herein, a Ce‐doping strategy is reported for efficiently improving the overall performance (e.g., irradiation resistance, decay time, radioluminescence, and light output) of BGO that can be expectedly applied in future high energy physics detection. Ce‐doped BGO (BGO:Ce) displays higher radiation resistance ability under 10 h UV irradiation (97% of original) and a faster fluorescence lifetime (269 ns), superior to pure BGO. Furthermore, BGO:Ce shows ≈30% luminescence intensity of pure BGO, well eliminating the oversaturation of SiPM coupled with scintillation detectors. Theoretical calculations imply that an intense competition between electron or hole traps and Ce ions (Ce3+, Ce4+) can effectively reduce the concentration of color centers, thus enhancing irradiation resistance ability.

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