Selective growth of zinc-blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxy

Cheng, T.S.; Jenkins, L. C.; Hooper, S. E.; Foxon, C. T.; Orton, John; Lacklison, D. E.

doi:10.1063/1.113671

Cited by 158 publications

(63 citation statements)

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“…Undoped cubic GaN films and cubic (Ga,Mn)N layers were grown on semi-insulating GaAs (001) substrates by plasma-assisted molecular beam epitaxy (PA-MBE) using arsenic as a surfactant to initiate the growth of cubic phase material [15]. Films where grown under Nrich conditions, which has been found to be necessary for the effective substitutional incorporation of Mn in hexagonal (Ga,Mn)N [16].…”

Section: Growth and Structurementioning

confidence: 99%

p -type conductivity in cubic (Ga,Mn)N thin films

Edmonds

Novikov

Sawicki

et al. 2005

Applied Physics Letters

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The electrical and magnetic properties of p-type cubic (Ga,Mn) IntroductionThe emerging field of semiconductor spintronics relies on the ability to manipulate the electron spin in a semiconductor device, thus offering new prospects for non-volatile high speed information storage and processing. An important milestone in this field was the discovery of carrier-mediated ferromagnetism in III-V compounds doped with Mn [1]. Intensive efforts have since led to ferromagnetic transition temperatures T C in excess of 150K in (Ga,Mn)As [2,3,4], and an impressive range of prototype devices [5,6,7]. However, for widespread technological usage of these systems, a T C significantly above 300K is necessary, which may yet require the development of new materials.In this context, the Zener mean-field model prediction of room temperature ferromagnetism in (Ga,Mn) , a value significantly higher than the highest hole concentrations so far obtained in GaN. Furthermore, optical measurements have indicated that the Mn acceptor level lies over 1eV above the valence band maximum in Wurtzite (Ga,Mn)N [9,10], which is in agreement with density-of-states calculations [11]. Therefore, in contrast to the case for (Ga,Mn)As, Mn does not appear to be an efficient acceptor in Wurtzite GaN, and may not be expected to interact strongly with delocalised charge carriers in the conduction or valence bands. In spite of this, there are numerous observations of room temperature ferromagnetism in n-type (Ga,Mn)N, even in cases where no secondary phases have been identified [12]. The origin of the ferromagnetism in these cases is unresolved, but no conclusive evidence for a coupling between magnetic and semiconductor properties has been demonstrated, and it appears that this effect lies outside the Zener model prediction.It may be expected that Mn incorporation is favoured in the metastable zincblende (cubic) phase of GaN, since MnN is itself cubic with a similar lattice constant to GaN. at room temperature [14]. Cubic (Ga,Mn)N may therefore be a more promising candidate than the Wurtzite phase for room temperature carrier-mediated ferromagnetism. It is important to determine the origin of the p-type conductivity and investigate the nature of the Mn state in this material. Here we report on a detailed study of the electrical and magnetic properties of cubic (Ga,Mn)N films grown on GaAs(001) by molecular beam epitaxy. Growth and structureUndoped cubic GaN films and cubic (Ga,Mn)N layers were grown on semi-insulating GaAs (001) substrates by plasma-assisted molecular beam epitaxy (PA-MBE) using arsenic as a surfactant to initiate the growth of cubic phase material [15]. Films where grown under Nrich conditions, which has been found to be necessary for the effective substitutional incorporation of Mn in hexagonal (Ga,Mn)N [16]. The substrate temperature was measured using an optical pyrometer. Growth temperatures from 450 to 680 o C were used. The active nitrogen for the growth of the group III-nitrides was provided by an CARS25 RF activated plasma source...

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Section: Growth and Structurementioning

confidence: 99%

p -type conductivity in cubic (Ga,Mn)N thin films

Edmonds

Novikov

Sawicki

et al. 2005

Applied Physics Letters

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“…Cubic (Ga,Mn)N layers, of typical thickness 300 nm, were grown on semi-insulating GaAs (001) substrates by plasma-assisted molecular beam epitaxy using arsenic as a surfactant to initiate the growth of cubic phase material [5]. Films were grown under N-rich conditions at growth temperatures from 450 to 680 o C. The Mn concentration in the films was set using the insitu beam monitoring ion gauge, and calibrated ex situ by secondary ion mass spectrometry (SIMS).…”

Section: Samples and Experimentalmentioning

confidence: 99%

Search For Hole Mediated Ferromagnetism In Cubic (Ga,Mn)N

Sawicki¹,

Dietl²,

Foxon³

et al. 2005

AIP Conference Proceedings

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“…The epitaxy of metastable, cubic GaN on GaAs (001) substrates has attracted some interest recently since c-GaN layers and the GaAs substrate have a common cleavage plane, they are considered to be well suited for the fabrication of laser cavities with cleaved facets [1][2][3][4][5][6][7][8]. [2].…”

Section: Introductionmentioning

confidence: 99%

Mechanisms of Optical Gain in Cubic GaN and InGaN

Holst

Hoffmann

Broser

et al. 1999

MRS Internet j. nitride semicond. res.

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The epitaxial growth of zinc-blende (cubic) GaN and InGaN on GaAs with a common cleavage plane and readily high-quality, low-cost wafers may be considered as an alternative approach for the future realization of cleaved laser cavities. To obtain detailed information about the potential of cubic GaN and InGaN for device applications we performed optical gain spectroscopy accompanied by time-integrated and time-dependent photoluminescence measurements at 2 K and 300 K. From intensity-dependent gain measurements, the identification of the gain processes was possible. For moderate excitation levels, the biexciton decay is likely to be responsible for a gain structure at 3.265 eV in cubic GaN [10]. For the highest pump intensities, the electron-hole-plasma is the dominant gain process, providing gain values up to 200 cm -1 . Furthermore cubic GaN samples with different cavity lengths from 250 to 600 µm were cleaved to investigate the influence of the sample geometry on the gain mechanisms. In these samples increased gain values up to 150 cm -1 as well as lower threshold excitation densities were observed, indicating the potential of cubic GaN for device applications. The results of GaN will be compared with intensity-dependent gain measurements on InGaN samples, grown on GaAs with varying In-content. The observed gain mechanisms in cubic InGaN will be discussed in detail.

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Selective growth of zinc-blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxy

Cited by 158 publications

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p -type conductivity in cubic (Ga,Mn)N thin films

p -type conductivity in cubic (Ga,Mn)N thin films

Search For Hole Mediated Ferromagnetism In Cubic (Ga,Mn)N

Mechanisms of Optical Gain in Cubic GaN and InGaN

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