Selective growth of GaN nanodots and nanostripes on 6H‐SiC substrates by metal organic vapor phase epitaxy

Goh, W.H.; Martin, Julien; Ould-Saad, S.; Gautier, S.; Sirenko, A. A.; Martínez, A.; Gratiet, L. Le; Ramdane, A.; Maloufi, Nabila; Ougazzaden, A.

doi:10.1002/pssc.200880770

Cited by 4 publications

(11 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2, in the shape of equilateraltriangle nanomesas with no nucleation on the epitaxial graphene. We find that the GaN nanostructures on SiC are significantly different from the typical hexagonal nanopyramids and their six (1101) or (1102) r-plane facets 12,13,19,20 . Here we use to our advantage the nonwetting property of graphene.…”

Section: Resultsmentioning

confidence: 75%

“…The very first layers of growth are cubic, as evidenced by their triangular faceting, which indicate a non-hexagonal symmetry: in-deed they do not grow as six-faceted nanopyramids as in Refs. 12,13,19,20 . The very good uniformity of all the GaN nanomesas and the absence of threading dislocation emerging from the interface with SiC are all apparent.…”

Section: Resultsmentioning

confidence: 99%

“…During bulk heteroepitaxy GaN and InGaN grow with many defects, notably threading dislocations leading to V-pits, lattice mismatch strain relaxation and transition from 2D to 3D growth and inhomogeneous indium incorporation (for InGaN), 12,13 . Such defects are detrimental to optoelectronic (and electronic) device performance, as they act as non-radiative recombination centers and leakage-current paths [14][15][16] .…”

mentioning

confidence: 99%

“…Such defects are detrimental to optoelectronic (and electronic) device performance, as they act as non-radiative recombination centers and leakage-current paths [14][15][16] . Heteroepitaxial nano selective area growth 12,17,18 (NSAG) was shown to alleviate these problems and produce high-quality and thick InGaN and GaN crystals. InGaN and GaN nanopya) Electronic mail: renaudpuybaret@gmail.com b) Electronic mail: claire.berger@physics.gatech.edu c) Electronic mail: aougazza@georgiatech-metz.fr ramids, with thickness over 100 nm and with no defects have been consistently grown with high throughput on various substrates, including silicon 13,19,20 .…”

mentioning

confidence: 99%

“…The process presented here circumvents the issue of lattice mismatch during heteroepitaxy by growing gallium nitride selectively on silicon carbide using nanoscale-patterned epitaxial graphene as a mask. Wurtzite GaN has a small in-plane lattice mismatch (3.5%) with hexagonal SiC and grows selectively on SiO 2 -masked Si-face 6H-SiC 12 . Then SiC and epitaxial graphene are compatible with high temperature MOVPE growth of high quality GaN materials.…”

mentioning

confidence: 99%

See 4 more Smart Citations

Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

Puybaret

Patriarche²,

Jordan

et al. 2016

Applied Physics Letters

View full text Add to dashboard Cite

International audienceWe report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nano selective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defective crystals in the heteroepitaxial growth of nitrides, and the high mobility graphene film can readily provide the back low-dissipative electrode in GaN-based optoelectronic devices. The process consists in first growing a 5-8 graphene layers film on the C-face of 4H- SiC by confinement-controlled sublimation of silicon carbide. The graphene film is then patterned and arrays of 75-nanometer-wide openings are etched in graphene revealing the SiC substrate. 30-nanometer-thick GaN is subsequently grown by metal organic vapor phase epitaxy. GaN nanomesas grow epitaxially with perfect selectivity on SiC, in openings patterned through graphene, with no nucleation on graphene. The up-or-down orientation of the mesas on SiC, their triangular faceting, and cross-sectional scanning transmission electron microscopy show that they are biphasic. The core is a zinc blende monocrystal surrounded with single-crystal hexagonal wurtzite. The GaN crystalline nanomesas have no threading dislocations, and do not show any V-pit. This NSAG process potentially leads to integration of high-quality III-nitrides on the wafer scalable epitaxial graphene / silicon carbide platform

show abstract

Section: Resultsmentioning

confidence: 75%

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

See 3 more Smart Citations

Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

Puybaret

Patriarche²,

Jordan

et al. 2016

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

Single-crystal nanopyramidal BGaN by nanoselective area growth on AlN/Si(111) and GaN templates

Li¹,

Gmili²,

Bonanno³

et al. 2016

Nanotechnology

View full text Add to dashboard Cite

We report nano-selective area growth (NSAG) of BGaN by MOCVD on AlN/Si(111) and GaN templates resulting in 150 nm single crystalline nanopyramids. This is in contrast to unmasked or micro-selective area growth, which results in a multi-crystalline structure on both substrates. Various characterization techniques were used to evaluate NSAG as a viable technique to improve BGaN material quality on AlN/Si(111) using results of GaN NSAG and unmasked BGaN growth for comparison. Evaluation of BGaN nanopyramid quality, shape and size uniformity revealed that the growth mechanism is the same on both the templates. Further STEM analysis of BGaN nanopyramids on AlN/Si (111) templates confirmed that these are single-crystalline structures without any dislocations, likely due to single nucleation occurring in the 80 nm mask opening. CL results correspond to boron content between 1.7% and 2.0% in the nanopyramids. We conclude that NSAG is promising for growth of high-quality BGaN nanostructures and complex nano-heterostructures, especially for low-cost silicon substrates.

show abstract

Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates

Puybaret¹,

Rogers²,

Gmili³

et al. 2017

Nanotechnology

View full text Add to dashboard Cite

Nanoselective area growth (NSAG) by metal organic vapor phase epitaxy of high-quality InGaN nanopyramids on GaN-coated ZnO/c-sapphire is reported. Nanopyramids grown on epitaxial low-temperature GaN-on-ZnO are uniform and appear to be single crystalline, as well as free of dislocations and V-pits. They are also indium-rich (with homogeneous 22% indium incorporation) and relatively thick (100 nm). These properties make them comparable to nanostructures grown on GaN and AlN/Si templates, in terms of crystallinity, quality, morphology, chemical composition and thickness. Moreover, the ability to selectively etch away the ZnO allows for the potential lift-off and transfer of the InGaN/GaN nanopyramids onto alternative substrates, e.g. cheaper and/or flexible. This technology offers an attractive alternative to NSAG on AlN/Si as a platform for the fabrication of high quality, thick and indium-rich InGaN monocrystals suitable for cheap, flexible and tunable light-emitting diodes.

show abstract

Selective growth of GaN nanodots and nanostripes on 6H‐SiC substrates by metal organic vapor phase epitaxy

Cited by 4 publications

References 23 publications

Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

Single-crystal nanopyramidal BGaN by nanoselective area growth on AlN/Si(111) and GaN templates

Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates

Contact Info

Product

Resources

About