Selective Growth and MOCVD Loading of Small Single Crystals of MOF-5 at Alumina and Silica Surfaces Modified with Organic Self-Assembled Monolayers

Hermes, Stephan; Zacher, Denise; Baunemann, Arne; Wöll, Christof; Fischer, Roland A.

doi:10.1021/cm062854+

Cited by 176 publications

(142 citation statements)

References 36 publications

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“…These observations show that the -COOH modification of SiNWs is crucial for the successful growth of MOF-199 on SiNWs. Similar effects have been reported for the growth of MOF-5 on flat silica substrates and the growth of MIL-47 on polyacrylonitrile substrates [40,41]. Adopting this general guideline, the SBS growth of MOF-199 on SiNWs could be extended to a broader choice of coordination polymers on NWs.…”

Section: Resultssupporting

confidence: 57%

Functionalization of silicon nanowire surfaces with metal-organic frameworks

et al. 2011

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Metal-organic frameworks (MOFs) and silicon nanowires (SiNWs) have been extensively studied due to their unique properties; MOFs have high porosity and specific surface area with well-defined nanoporous structure, while SiNWs have valuable one-dimensional electronic properties. Integration of the two materials into one composite could synergistically combine the advantages of both materials and lead to new applications. We report the first example of a MOF synthesized on surface-modified SiNWs. The synthesis of polycrystalline MOF-199 (also known as HKUST-1) on SiNWs was performed at room temperature using a step-by-step (SBS) approach, and X-ray photoelectron spectroscopy, X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and energy dispersive spectroscopy elemental mapping were used to characterize the material. Matching of the SiNW surface functional groups with the MOF organic linker coordinating groups was found to be critical for the growth. Additionally, the MOF morphology can by tuned by changing the soaking time, synthesis temperature and precursor solution concentration. This SiNW/MOF hybrid structure opens new avenues for rational design of materials with novel functionalities.

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Section: Resultssupporting

confidence: 57%

Functionalization of silicon nanowire surfaces with metal-organic frameworks

et al. 2011

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“…28,29 In this work, Pd(thd) 2 was used for the Pd loading of IRMOF-8 films as it is commercially available and evaporates at relatively low temperatures under vacuum. Additionally, IRMOF-8 has a larger pore window size compared to MOF-5, which should enable absorption of larger precursor molecules.…”

Section: E Loading Of Irmof-8 With Pdmentioning

confidence: 99%

Studies on atomic layer deposition of IRMOF-8 thin films

Salmi

Heikkilä

Vehkamäki

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Deposition of IRMOF-8 thin films by atomic layer deposition was studied at 260–320 °C. Zinc acetate and 2,6-naphthalenedicarboxylic acid were used as the precursors. The as-deposited amorphous films were crystallized in 70% relative humidity at room temperature resulting in an unknown phase with a large unit cell. An autoclave with dimethylformamide as the solvent was used to recrystallize the films into IRMOF-8 as confirmed by grazing incidence x-ray diffraction. The films were further characterized by high temperature x-ray diffraction (HTXRD), field emission scanning electron microscopy, Fourier transform infrared spectroscopy (FTIR), time-of-flight elastic recoil detection analysis (TOF-ERDA), nanoindentation, and energy-dispersive x-ray spectroscopy. HTXRD measurements revealed similar behavior to bulk IRMOF-8. According to TOF-ERDA and FTIR, composition of the films was similar to IRMOF-8. Through-porosity was confirmed by loading the films with palladium using Pd(thd)2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionato) as the precursor.

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“…Allara formation, thus reducing penetration. Reports are available which show the possibility of using CVD to deposit metal films on SAMs [77][78][79]. W€ oll and Fishcher and co-workers have reviewed wide variations of metal deposition on SAMs, including CVD, which can provide reproducible metal-organic interfaces, as characterized by spectroscopic studies [80].…”

Section: Chemical Vapor Depositionmentioning

confidence: 99%

Issues and Challenges in Vapor-Deposited Top Metal Contacts for Molecule-Based Electronic Devices

Maitani

2011

Unimolecular and Supramolecular Electronics I

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Metal vapor deposition to form ohmic contacts is commonly used in the fabrication of organic electronic devices because of significant manufacturability advantages. In the case of single molecular layer devices, however, the extremely small thickness, typically ~1-2nm, presents serious challenges in achieving good contacts and device integrity. This review focuses on recent scientific aspects of metal vapor deposition on monolayer thickness molecular films, particularly self-assembled monolayers, ranging across mechanisms of metal nucleation, metal-molecular group interactions and chemical reactions, diffusion of metal atoms within and through organic films, and the correlations of these and other factors with device function. Results for both non-reactive and reactive metal deposition are reviewed. Finally, novel strategies are considered which show promise for providing highly reliable and durable metal/organic top contacts for use in metal-molecule-metal junctions for device applications.

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Selective Growth and MOCVD Loading of Small Single Crystals of MOF-5 at Alumina and Silica Surfaces Modified with Organic Self-Assembled Monolayers

Cited by 176 publications

References 36 publications

Functionalization of silicon nanowire surfaces with metal-organic frameworks

Functionalization of silicon nanowire surfaces with metal-organic frameworks

Studies on atomic layer deposition of IRMOF-8 thin films

Issues and Challenges in Vapor-Deposited Top Metal Contacts for Molecule-Based Electronic Devices

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